2N7002C1B Todos los transistores

 

2N7002C1B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N7002C1B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 40 V
   |Id|ⓘ - Corriente continua de drenaje: 0.115 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 25 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 7.5 Ohm
   Paquete / Cubierta: SOT-23
 

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2N7002C1B Datasheet (PDF)

 ..1. Size:289K  semelab
 2n7002c1a 2n7002c1b.pdf pdf_icon

2N7002C1B

N-CHANNEL ENHANCEMENT MODE MOSFET 2N7002C1 VDSS = 60V , ID = 115mA, RDS(ON) = 7.5 Fast Switching Low Threshold Voltage Integral Source-Drain Body Diode Hermetic Ceramic Surface Mount Package (SOT-23 compatible) High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VDS Drain Source Voltage 6

 6.1. Size:329K  semelab
 2n7002c1c 2n7002c1d.pdf pdf_icon

2N7002C1B

N-CHANNEL ENHANCEMENT MODE MOSFET 2N7002C1A / 2N7002C1B, 2N7002C1C / 2N7002C1D VDSS = 60V , ID = 115mA, RDS(ON) = 7.5 Fast Switching Low Threshold Voltage Integral Source-Drain Body Diode Hermetic Ceramic Surface Mount Package (SOT-23 compatible) High Reliability Screening Options Available Variants C1C & C1D with solder dip finished pads (63Sn

 7.1. Size:76K  philips
 2n7002ck.pdf pdf_icon

2N7002C1B

2N7002CK60 V, 0.3 A N-channel Trench MOSFETRev. 01 11 September 2009 Product data sheet1. Product profile1.1 General descriptionESD protected N-channel enhancement mode Field-Effect Transistor (FET) in asmall SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features Logic-level compatible Very fast switching Trench MOSFET

 7.2. Size:585K  nxp
 2n7002ck.pdf pdf_icon

2N7002C1B

2N7002CK60 V, 0.3 A N-channel Trench MOSFETRev. 01 11 September 2009 Product data sheet1. Product profile1.1 General descriptionESD protected N-channel enhancement mode Field-Effect Transistor (FET) in asmall SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features Logic-level compatible Very fast switching Trench MOSFET

MOSTRAR MÁS

Otros transistores... 2N7000RLRA , 2N7000RLRAG , 2N7000RLRMG , 2N7000RLRPG , 2N7002-7 , 2N7002-7-F , 2N7002BKMB , 2N7002C1A , IRF9540N , 2N7002C1C , 2N7002C1D , 2N7002CSM , 2N7002DCSM , 2N7002DSGP , 2N7002EGP , 2N7002ESEGP , 2N7002ESGP .

History: 2N7222U | BRCS065N08SHBD | BRCS26N50PH | PSMN9R0-30LL | AM1523CE | AP4543GEH-HF | JCS7N95CA

 

 
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