2N7002C1B
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2N7002C1B
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.35
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 40
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 0.115
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 25
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 7.5
Ohm
Package:
SOT-23
2N7002C1B
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2N7002C1B
Datasheet (PDF)
..1. Size:289K semelab
2n7002c1a 2n7002c1b.pdf 
N-CHANNEL ENHANCEMENT MODE MOSFET 2N7002C1 VDSS = 60V , ID = 115mA, RDS(ON) = 7.5 Fast Switching Low Threshold Voltage Integral Source-Drain Body Diode Hermetic Ceramic Surface Mount Package (SOT-23 compatible) High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VDS Drain Source Voltage 6
6.1. Size:329K semelab
2n7002c1c 2n7002c1d.pdf
N-CHANNEL ENHANCEMENT MODE MOSFET 2N7002C1A / 2N7002C1B, 2N7002C1C / 2N7002C1D VDSS = 60V , ID = 115mA, RDS(ON) = 7.5 Fast Switching Low Threshold Voltage Integral Source-Drain Body Diode Hermetic Ceramic Surface Mount Package (SOT-23 compatible) High Reliability Screening Options Available Variants C1C & C1D with solder dip finished pads (63Sn
7.1. Size:76K philips
2n7002ck.pdf
2N7002CK60 V, 0.3 A N-channel Trench MOSFETRev. 01 11 September 2009 Product data sheet1. Product profile1.1 General descriptionESD protected N-channel enhancement mode Field-Effect Transistor (FET) in asmall SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features Logic-level compatible Very fast switching Trench MOSFET
7.2. Size:585K nxp
2n7002ck.pdf
2N7002CK60 V, 0.3 A N-channel Trench MOSFETRev. 01 11 September 2009 Product data sheet1. Product profile1.1 General descriptionESD protected N-channel enhancement mode Field-Effect Transistor (FET) in asmall SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features Logic-level compatible Very fast switching Trench MOSFET
7.3. Size:174K semelab
2n7002csm.pdf
N-CHANNEL ENHANCEMENT MODE MOSFET 2N7002CSM VDSS = 60V , ID = 115mA, RDS(ON) = 7.5 Fast Switching Low Threshold Voltage Integral Source-Drain Body Diode Hermetic Ceramic Surface Mount Package (SOT-23 compatible) High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VDS Drain Source Voltage
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