SFS9520 Todos los transistores

 

SFS9520 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SFS9520
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 29 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.6 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 90 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
   Paquete / Cubierta: TO220F
     - Selección de transistores por parámetros

 

SFS9520 Datasheet (PDF)

 ..1. Size:493K  samsung
 sfs9520.pdf pdf_icon

SFS9520

Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.6 Rugged Gate Oxide Technology Lower Input CapacitanceID = -4.6 A Improved Gate Charge 175oC Operating Temperature Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.444 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Ra

 9.1. Size:502K  samsung
 sfs9510.pdf pdf_icon

SFS9520

Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 1.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = -2.5 A Improved Gate Charge 175oC Operating Temperature Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.912 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Ra

 9.2. Size:503K  samsung
 sfs9530.pdf pdf_icon

SFS9520

Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = -8 A Improved Gate Charge 175oC Operating Temperature Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.225 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Rati

 9.3. Size:501K  samsung
 sfs9540.pdf pdf_icon

SFS9520

Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = -10.7 A Improved Gate Charge 175oC Operating Temperature Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.161 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Ra

MOSTRAR MÁS

Otros transistores... SFR9120 , SFR9130 , SFR9210 , SFR9214 , SFR9220 , SFR9224 , SFS2955 , SFS9510 , 5N50 , SFS9530 , SFS9540 , SFS9610 , SFS9614 , SFS9620 , SFS9624 , SFS9630 , SFS9634 .

History: NCE0250D | IPI80CN10NG | IRFU9214 | MTW32N20EG | WSF20P03

 

 
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