2N7002SSGP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2N7002SSGP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.96 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.51 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 1 nC
   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 13 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm
   Paquete / Cubierta: SOT-363

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2N7002SSGP Datasheet (PDF)

..1. Size:159K chenmko
2n7002ssgp.pdf

CHENMKO ENTERPRISE CO.,LTD2N7002SSGPSURFACE MOUNTDual N-Channel Enhancement MOS FET VOLTAGE 50 Volts CURRENT 0.51 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.FEATURESC-88/SOT-363* Small surface mounting type. (SC-88/SOT-363)* High density cell design for low RDS(ON). * Suitable for high packing density.(1)(G1)

7.1. Size:114K hsmc
h2n7002sn.pdf

Spec. No. : MOS200605HI-SINCERITYIssued Date : 2006.02.01Revised Date : 2006.02.07MICROELECTRONICS CORP.Page No. : 1/5H2N7002SN Pin Assignment & SymbolH2N7002SN33-Lead Plastic SOT-323Package Code: SNN-Channel MOSFET (60V, 0.2A)Pin 1: Gate 2: Source 3: Drain21DDescriptionGN-channel enhancement-mode MOS transistor.SAbsolute Maximum RatingsDrain-Source Vol

7.2. Size:907K lrc
l2n7002sdw1t1g l2n7002sdw1t3g.pdf

L2N7002SDW1T1GS-L2N7002SDW1T1GSmall Signal MOSFET380 mA, 60V NChannel SC-881. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.ESD protectedLow RDS

7.3. Size:393K lrc
l2n7002swt1g s-l2n7002swt1g.pdf

L2N7002SWT1GS-L2N7002SWT1GSmall Signal MOSFET380 mAmps, 60 Volts NChannel SC-701. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.ESD protectedLow R

7.4. Size:965K lrc
l2n7002slt1g l2n7002slt3g.pdf

L2N7002SLT1GS-L2N7002SLT1GSmall Signal MOSFET380 mAmps, 60V NChannel SOT-231. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.ESD protectedLow RDS

7.5. Size:348K chenmko
2n7002sesgp.pdf

CHENMKO ENTERPRISE CO.,LTD2N7002SESGPSURFACE MOUNT Dual N-Channel Enhancement MOS FET VOLTAGE 60 Volts CURRENT 0.64 AmpereAPPLICATION* Relays, Solenoids, Lamps, Hammers Display deivers. * High saturation current capability. * Battery Operated Systems. FEATURESC-88/SOT-363* Small surface mounting type. (SC-88/SOT-363). * 60V/0.5A, RDS(ON)=2ohm at VGS=10V* Super high d

7.6. Size:378K chenmko
2n7002sgp.pdf

CHENMKO ENTERPRISE CO.,LTD2N7002SGPSURFACE MOUNTDual N-Channel Enhancement MOS FET VOLTAGE 60 Volts CURRENT 115 mAmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.FEATURESC-88/SOT-363* Small surface mounting type. (SC-88/SOT-363)* High density cell design for low RDS(ON). * Suitable for high packing density.(1)(S1)

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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