Справочник MOSFET. 2N7002SSGP

 

2N7002SSGP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2N7002SSGP
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.96 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.51 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 1 nC
   trⓘ - Время нарастания: 6 ns
   Cossⓘ - Выходная емкость: 13 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2 Ohm
   Тип корпуса: SOT-363

 Аналог (замена) для 2N7002SSGP

 

 

2N7002SSGP Datasheet (PDF)

 ..1. Size:159K  chenmko
2n7002ssgp.pdf

2N7002SSGP
2N7002SSGP

CHENMKO ENTERPRISE CO.,LTD2N7002SSGPSURFACE MOUNTDual N-Channel Enhancement MOS FET VOLTAGE 50 Volts CURRENT 0.51 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.FEATURESC-88/SOT-363* Small surface mounting type. (SC-88/SOT-363)* High density cell design for low RDS(ON). * Suitable for high packing density.(1)(G1)

 7.1. Size:114K  hsmc
h2n7002sn.pdf

2N7002SSGP
2N7002SSGP

Spec. No. : MOS200605HI-SINCERITYIssued Date : 2006.02.01Revised Date : 2006.02.07MICROELECTRONICS CORP.Page No. : 1/5H2N7002SN Pin Assignment & SymbolH2N7002SN33-Lead Plastic SOT-323Package Code: SNN-Channel MOSFET (60V, 0.2A)Pin 1: Gate 2: Source 3: Drain21DDescriptionGN-channel enhancement-mode MOS transistor.SAbsolute Maximum RatingsDrain-Source Vol

 7.2. Size:907K  lrc
l2n7002sdw1t1g l2n7002sdw1t3g.pdf

2N7002SSGP
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L2N7002SDW1T1GS-L2N7002SDW1T1GSmall Signal MOSFET380 mA, 60V NChannel SC-881. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.ESD protectedLow RDS

 7.3. Size:393K  lrc
l2n7002swt1g s-l2n7002swt1g.pdf

2N7002SSGP
2N7002SSGP

L2N7002SWT1GS-L2N7002SWT1GSmall Signal MOSFET380 mAmps, 60 Volts NChannel SC-701. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.ESD protectedLow R

 7.4. Size:965K  lrc
l2n7002slt1g l2n7002slt3g.pdf

2N7002SSGP
2N7002SSGP

L2N7002SLT1GS-L2N7002SLT1GSmall Signal MOSFET380 mAmps, 60V NChannel SOT-231. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.ESD protectedLow RDS

 7.5. Size:348K  chenmko
2n7002sesgp.pdf

2N7002SSGP
2N7002SSGP

CHENMKO ENTERPRISE CO.,LTD2N7002SESGPSURFACE MOUNT Dual N-Channel Enhancement MOS FET VOLTAGE 60 Volts CURRENT 0.64 AmpereAPPLICATION* Relays, Solenoids, Lamps, Hammers Display deivers. * High saturation current capability. * Battery Operated Systems. FEATURESC-88/SOT-363* Small surface mounting type. (SC-88/SOT-363). * 60V/0.5A, RDS(ON)=2ohm at VGS=10V* Super high d

 7.6. Size:378K  chenmko
2n7002sgp.pdf

2N7002SSGP
2N7002SSGP

CHENMKO ENTERPRISE CO.,LTD2N7002SGPSURFACE MOUNTDual N-Channel Enhancement MOS FET VOLTAGE 60 Volts CURRENT 115 mAmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.FEATURESC-88/SOT-363* Small surface mounting type. (SC-88/SOT-363)* High density cell design for low RDS(ON). * Suitable for high packing density.(1)(S1)

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