2N7275 Todos los transistores

 

2N7275 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N7275

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 25 W

Tensión drenaje-fuente (Vds): 200 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Resistencia drenaje-fuente RDS(on): 0.5 Ohm

Empaquetado / Estuche: TO-205AF

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2N7275 Datasheet (PDF)

1.1. 2n7272 2n7275 2n7278 2n7281.pdf Size:177K _update-mosfet

2N7275
2N7275

 INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall MIL-PRF-19500/604B be completed by 30 November 2004. 30 July 2004 SUPERSEDING MIL-PRF-19500/604A 21 June 1999 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE CHARACTERIZATION ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES

1.2. jansr2n7275.pdf Size:45K _intersil

2N7275
2N7275

JANSR2N7275 Formerly FRL230R4 5A, 200V, 0.500 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description • 5A, 200V, rDS(ON) = 0.500Ω The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Chan- • Total Dose nel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as - Meets Pre

 5.1. jansr2n7272.pdf Size:45K _intersil

2N7275
2N7275

JANSR2N7272 Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description • 8A, 100V, rDS(ON) = 0.180Ω The Intersil Corporation,has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Chan- • Total Dose nel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as - Meets Pre

5.2. jansr2n7278.pdf Size:45K _intersil

2N7275
2N7275

JANSR2N7278 Formerly FRL234R4 4A, 250V, 0.700 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description • 4A, 250V, rDS(ON) = 0.700Ω The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Chan- • Total Dose nel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as - Meets Pre

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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