All MOSFET. 2N7275 Datasheet

 

2N7275 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2N7275
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: TO-205AF

 2N7275 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2N7275 Datasheet (PDF)

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 2n7272 2n7275 2n7278 2n7281.pdf

2N7275 2N7275

INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall MIL-PRF-19500/604Bbe completed by 30 November 2004. 30 July 2004 SUPERSEDINGMIL-PRF-19500/604A21 June 1999PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE CHARACTERIZATION ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES

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 2n7275d 2n7275r 2n7275h.pdf

2N7275 2N7275

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 jansr2n7275.pdf

2N7275 2N7275

JANSR2N7275Formerly FRL230R4 5A, 200V, 0.500 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETFeatures Description 5A, 200V, rDS(ON) = 0.500 The Intersil Corporation has designed a series of SECONDGENERATION hardened power MOSFETs of both N-Chan- Total Dosenel and P-Channel enhancement types with ratings from100V to 500V, 1A to 60A, and on resistance as low as- Meets Pre

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 2n7271h 2n7271d 2n7271r.pdf

2N7275 2N7275

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 2n7272h 2n7272d 2n7272r.pdf

2N7275 2N7275

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 jansr2n7272.pdf

2N7275 2N7275

JANSR2N7272Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETFeatures Description 8A, 100V, rDS(ON) = 0.180 The Intersil Corporation,has designed a series of SECONDGENERATION hardened power MOSFETs of both N-Chan- Total Dosenel and P-Channel enhancement types with ratings from100V to 500V, 1A to 60A, and on resistance as low as- Meets Pre

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 jansr2n7278.pdf

2N7275 2N7275

JANSR2N7278Formerly FRL234R4 4A, 250V, 0.700 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETFeatures Description 4A, 250V, rDS(ON) = 0.700 The Intersil Corporation has designed a series of SECONDGENERATION hardened power MOSFETs of both N-Chan- Total Dosenel and P-Channel enhancement types with ratings from100V to 500V, 1A to 60A, and on resistance as low as- Meets Pre

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IRFM240

 

 
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