2N7293 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N7293  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 150 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 27 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm

Encapsulados: TO-204AA

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2N7293 datasheet

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 2n7291 2n7293 2n7295 2n7297.pdf pdf_icon

2N7293

INCH POUND The documentation and process conversion measures necessary to comply with this revision shall MIL-PRF-19500/606B be completed by 28 October 2004. 28 July 2004 SUPERSEDING MIL-PRF-19500/606A 6 February 1998 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7291, 2N729

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2N7293

JANSR2N7292 Formerly FRF150R4 25A, 100V, 0.070 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 25A, 100V, rDS(ON) = 0.070 The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Chan- Total Dose nel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as - Meets P

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2N7293

JANSR2N7294 Formerly FRF250R4 23A, 200V, 0.115 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 23A, 200V, rDS(ON) = 0.115 The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Chan- Total Dose nel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as - Meets P

Otros transistores... 2N7268U, 2N7269, 2N7269U, 2N7272, 2N7275, 2N7278, 2N7281, 2N7291, IRF830, 2N7295, 2N7297, 2N7334, 2N7335, 2N7335E3, 2N7380, 2N7381, 2N7394