2N7293 Datasheet and Replacement
Type Designator: 2N7293
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 27 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: TO-204AA
2N7293 Datasheet (PDF)
2n7291 2n7293 2n7295 2n7297.pdf

INCH POUND The documentation and process conversion measures necessary to comply with this revision shall MIL-PRF-19500/606Bbe completed by 28 October 2004. 28 July 2004 SUPERSEDINGMIL-PRF-19500/606A 6 February 1998 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7291, 2N729
jansr2n7292.pdf

JANSR2N7292Formerly FRF150R4 25A, 100V, 0.070 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETFeatures Description 25A, 100V, rDS(ON) = 0.070 The Intersil Corporation has designed a series of SECONDGENERATION hardened power MOSFETs of both N-Chan- Total Dosenel and P-Channel enhancement types with ratings from100V to 500V, 1A to 60A, and on resistance as low as- Meets P
jansr2n7294.pdf

JANSR2N7294Formerly FRF250R4 23A, 200V, 0.115 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETFeatures Description 23A, 200V, rDS(ON) = 0.115 The Intersil Corporation has designed a series of SECONDGENERATION hardened power MOSFETs of both N-Chan- Total Dosenel and P-Channel enhancement types with ratings from100V to 500V, 1A to 60A, and on resistance as low as- Meets P
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , 7N65 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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