2N7405 Todos los transistores

 

2N7405 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N7405
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 310 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
   Paquete / Cubierta: TO-254AA
 

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2N7405 Datasheet (PDF)

 ..1. Size:56K  intersil
2n7405.pdf pdf_icon

2N7405

JANSR2N7405Formerly FSF150R4 25A, 100V, 0.070 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETFeatures Description 25A (Note), 100V, rDS(ON) = 0.070 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RA

 0.1. Size:52K  intersil
jansr2n7405.pdf pdf_icon

2N7405

JANSR2N7405Formerly FSF150R4 25A, 100V, 0.070 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETFeatures Description 25A (Note), 100V, rDS(ON) = 0.070 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RA

 9.1. Size:52K  intersil
jansr2n7403.pdf pdf_icon

2N7405

JANSR2N7403Formerly FSF9150R4 22A, -100V, 0.140 Ohm, Rad Hard,June 1998 P-Channel Power MOSFETFeatures Description 22A, -100V, rDS(ON) = 0.140 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (S

 9.2. Size:52K  intersil
jansr2n7406.pdf pdf_icon

2N7405

JANSR2N7406Formerly FSF250R4 24A, 200V, 0.110 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETFeatures Description 24A, 200V, rDS(ON) = 0.110 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (Si)

Otros transistores... 2N7297 , 2N7334 , 2N7335 , 2N7335E3 , 2N7380 , 2N7381 , 2N7394 , 2N7394U , IRF540 , BSC079N03S , FHF5N60 , MDD1654 , NDP05N50Z , NDS356P , P6503NJ , RU6888R , SVS5N70D .

History: SVT3025D4 | NP80N03NDE | ME25N15AL | 11N10 | FQAF16N25 | FS14SM-9

 

 
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