2N7405 Datasheet. Specs and Replacement

Type Designator: 2N7405  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 310 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: TO-254AA

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2N7405 datasheet

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 2n7405.pdf pdf_icon

2N7405

JANSR2N7405 Formerly FSF150R4 25A, 100V, 0.070 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 25A (Note), 100V, rDS(ON) = 0.070 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RA... See More ⇒

 0.1. Size:52K  intersil
 jansr2n7405.pdf pdf_icon

2N7405

JANSR2N7405 Formerly FSF150R4 25A, 100V, 0.070 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 25A (Note), 100V, rDS(ON) = 0.070 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RA... See More ⇒

 9.1. Size:52K  intersil
 jansr2n7403.pdf pdf_icon

2N7405

JANSR2N7403 Formerly FSF9150R4 22A, -100V, 0.140 Ohm, Rad Hard, June 1998 P-Channel Power MOSFET Features Description 22A, -100V, rDS(ON) = 0.140 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (S... See More ⇒

 9.2. Size:52K  intersil
 jansr2n7406.pdf pdf_icon

2N7405

JANSR2N7406 Formerly FSF250R4 24A, 200V, 0.110 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 24A, 200V, rDS(ON) = 0.110 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (Si) ... See More ⇒

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Detailed specifications: 2N7297, 2N7334, 2N7335, 2N7335E3, 2N7380, 2N7381, 2N7394, 2N7394U, IRF1404, BSC079N03S, FHF5N60, MDD1654, NDP05N50Z, NDS356P, P6503NJ, RU6888R, SVS5N70D

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