2N5653 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5653
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 0.625 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 0.04 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 50 Ohm
Encapsulados: TO-92
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2N5653 datasheet
9.1. Size:176K motorola
2n5655-57 2n5655 2n5656 2n5657.pdf 
Order this document MOTOROLA by 2N5655/D SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 Plastic NPN Silicon 2N5657 High-Voltage Power Transistor . . . designed for use in line operated equipment such as audio output amplifiers; low current, high voltage converters; and AC line relays. 0.5 AMPERE POWER TRANSISTORS Excellent DC Current Gain hFE = 30 250 @ IC = 100 mAdc NP
9.2. Size:497K st
2n5657.pdf 
2N5657 SILICON NPN TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The 2N5657 is a silicon epitaxial-base NPN transistor in Jedec SOT-32 plastic package. It is intended for use output amplifiers, low current, high voltage converters and AC line relays. 1 2 3 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Un
9.3. Size:119K onsemi
2n5655g.pdf 
2N5655G, 2N5657G Plastic NPN Silicon High-Voltage Power Transistors These devices are designed for use in line-operated equipment such as audio output amplifiers; low-current, high-voltage converters; and http //onsemi.com AC line relays. 0.5 AMPERE Features POWER TRANSISTORS Excellent DC Current Gain NPN SILICON High Current-Gain - Bandwidth Product 250-350 VOLTS, 20 WATT
9.4. Size:80K onsemi
2n5655 2n5657.pdf 
2N5655, 2N5657 Plastic NPN Silicon High-Voltage Power Transistor These devices are designed for use in line-operated equipment such as audio output amplifiers; low-current, high-voltage converters; and http //onsemi.com AC line relays. 0.5 AMPERE Features POWER TRANSISTORS Excellent DC Current Gain - NPN SILICON hFE = 30-250 @ IC = 100 mAdc 250-350 VOLTS, 20 WATTS Current
9.5. Size:80K onsemi
2n5657g.pdf 
2N5655, 2N5657 Plastic NPN Silicon High-Voltage Power Transistor These devices are designed for use in line-operated equipment such as audio output amplifiers; low-current, high-voltage converters; and http //onsemi.com AC line relays. 0.5 AMPERE Features POWER TRANSISTORS Excellent DC Current Gain - NPN SILICON hFE = 30-250 @ IC = 100 mAdc 250-350 VOLTS, 20 WATTS Current
9.6. Size:175K onsemi
2n5655g 2n5657g.pdf 
2N5655G, 2N5657G Plastic NPN Silicon High-Voltage Power Transistors These devices are designed for use in line-operated equipment such as audio output amplifiers; low-current, high-voltage converters; and http //onsemi.com AC line relays. 0.5 AMPERE Features POWER TRANSISTORS Excellent DC Current Gain NPN SILICON High Current-Gain - Bandwidth Product 250-350 VOLTS, 20 WATT
9.7. Size:121K jmnic
2n5655 2n5656 2n5657.pdf 
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5655 2N5656 2N5657 DESCRIPTION With TO-126 package High breakdown voltage APPLICATIONS For use in line-operated equipment such as audio output amplifiers; low-current ,high-voltage converters; and AC line relays PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Bas
9.9. Size:53K inchange semiconductor
2n5657.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N5657 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 350V(Min) DC Current Gain- hFE= 30-250@IC= 0.1A Low Saturation Voltage APPLICATIONS Designed for use in line-operated equipment such as audio output amplifiers; low-current, high-voltage converters; and AC
9.10. Size:117K inchange semiconductor
2n5655 2n5656 2n5657.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5655 2N5656 2N5657 DESCRIPTION With TO-126 package High breakdown voltage APPLICATIONS For use in line-operated equipment such as audio output amplifiers; low-current ,high-voltage converters; and AC line relays PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting bas
9.11. Size:190K inchange semiconductor
2n5656.pdf 
isc Silicon NPN Power Transistors 2N5656 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 300V(Min) CEO(SUS) Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for use in line-operated equipment such as audio output amplifiers; low-current, high-voltage converters; and
9.12. Size:195K inchange semiconductor
2n5655.pdf 
isc Silicon NPN Power Transistors 2N5655 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 250V(Min) CEO(SUS) DC Current Gain- h = 30-250@I = 0.1A FE C Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in line-operated equipment such as audio output amplifiers; low-current, high-
Otros transistores... P6503NJ
, RU6888R
, SVS5N70D
, SVS5N70MJ
, SVS5N70MN
, SVS5N70F
, SVS5N70MU
, WFP85N06
, 10N60
, 2N5654
, 2N60A
, 2N60AF
, 2N60G
, 2N6568
, 2N6659-2
, 2N6659X
, 2N6660-2
.
History: ID7509
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