2N5653 Todos los transistores

 

2N5653 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N5653
   Tipo de FET: JFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.625 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 0.04 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 50 Ohm
   Paquete / Cubierta: TO-92
     - Selección de transistores por parámetros

 

2N5653 Datasheet (PDF)

 ..1. Size:44K  njs
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2N5653

 9.1. Size:176K  motorola
2n5655-57 2n5655 2n5656 2n5657.pdf pdf_icon

2N5653

Order this documentMOTOROLAby 2N5655/DSEMICONDUCTOR TECHNICAL DATA2N56552N5656Plastic NPN Silicon2N5657High-Voltage Power Transistor. . . designed for use in lineoperated equipment such as audio output amplifiers;lowcurrent, highvoltage converters; and AC line relays. 0.5 AMPEREPOWER TRANSISTORS Excellent DC Current Gain hFE = 30250 @ IC = 100 mAdcNP

 9.2. Size:497K  st
2n5657.pdf pdf_icon

2N5653

2N5657SILICON NPN TRANSISTOR STMicroelectronics PREFERREDSALESTYPE NPN TRANSISTOR DESCRIPTION The 2N5657 is a silicon epitaxial-base NPNtransistor in Jedec SOT-32 plastic package. It isintended for use output amplifiers, low current,high voltage converters and AC line relays.123SOT-32INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Un

 9.3. Size:119K  onsemi
2n5655g.pdf pdf_icon

2N5653

2N5655G, 2N5657GPlastic NPN SiliconHigh-Voltage PowerTransistorsThese devices are designed for use in line-operated equipment suchas audio output amplifiers; low-current, high-voltage converters; andhttp://onsemi.comAC line relays.0.5 AMPEREFeaturesPOWER TRANSISTORS Excellent DC Current GainNPN SILICON High Current-Gain - Bandwidth Product250-350 VOLTS, 20 WATT

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