2N5653 Datasheet. Specs and Replacement

Type Designator: 2N5653  📄📄 

Type of Transistor: JFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.625 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.04 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 50 Ohm

Package: TO-92

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2N5653 datasheet

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2N5653

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2N5653

Order this document MOTOROLA by 2N5655/D SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 Plastic NPN Silicon 2N5657 High-Voltage Power Transistor . . . designed for use in line operated equipment such as audio output amplifiers; low current, high voltage converters; and AC line relays. 0.5 AMPERE POWER TRANSISTORS Excellent DC Current Gain hFE = 30 250 @ IC = 100 mAdc NP... See More ⇒

 9.2. Size:497K  st
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2N5653

2N5657 SILICON NPN TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The 2N5657 is a silicon epitaxial-base NPN transistor in Jedec SOT-32 plastic package. It is intended for use output amplifiers, low current, high voltage converters and AC line relays. 1 2 3 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Un... See More ⇒

 9.3. Size:119K  onsemi
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2N5653

2N5655G, 2N5657G Plastic NPN Silicon High-Voltage Power Transistors These devices are designed for use in line-operated equipment such as audio output amplifiers; low-current, high-voltage converters; and http //onsemi.com AC line relays. 0.5 AMPERE Features POWER TRANSISTORS Excellent DC Current Gain NPN SILICON High Current-Gain - Bandwidth Product 250-350 VOLTS, 20 WATT... See More ⇒

Detailed specifications: P6503NJ, RU6888R, SVS5N70D, SVS5N70MJ, SVS5N70MN, SVS5N70F, SVS5N70MU, WFP85N06, IRF3710, 2N5654, 2N60A, 2N60AF, 2N60G, 2N6568, 2N6659-2, 2N6659X, 2N6660-2

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.