2N6568 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2N6568
   Tipo de FET: JFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 1 A
   Tjⓘ - Temperatura máxima de unión: 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm
Paquete / Cubierta: TO52

Búsqueda de reemplazo de MOSFET 2N6568

2N6568 Datasheet (PDF)

..1. Size:48K crystaloncs
2n6568.pdf

9.1. Size:298K rca
2n583 2n584 2n640 2n641 2n642 2n643 2n644 2n645 2n656 2n696.pdf

9.2. Size:144K mospec
2n6569.pdf

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9.3. Size:11K semelab
2n6560.pdf

2N6560Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 450V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

9.4. Size:12K semelab
2n6561.pdf

2N6561Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 300V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

9.5. Size:150K jmnic
2n6569.pdf

JMnic Product Specification Silicon NPN Power Transistors 2N6569 DESCRIPTION With TO-3 package Complement to type 2N6594 Wide area of safe operation APPLICATIONS Designed for low voltage amplifier power switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBO

9.6. Size:217K inchange semiconductor
2n6560.pdf

isc Silicon NPN Power Transistor 2N6560DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =450V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage 450 VCBOV Collector-Emitter Voltage 45

9.7. Size:217K inchange semiconductor
2n6561.pdf

isc Silicon NPN Power Transistor 2N6561DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =300V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage 300 VCBOV Collector-Emitter Voltage 30

9.8. Size:117K inchange semiconductor
2n6569.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6569 DESCRIPTION With TO-3 package Complement to type 2N6594 Wide area of safe operation APPLICATIONS Designed for low voltage amplifier power switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum rating

Otros transistores... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

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