2N6568 Datasheet and Replacement
Type Designator: 2N6568
Type of Transistor: JFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 0.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Id| ⓘ - Maximum Drain Current: 1
A
Tj ⓘ - Maximum Junction Temperature: 200
°C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5
Ohm
Package:
TO52
-
MOSFET ⓘ Cross-Reference Search
2N6568 Datasheet (PDF)
9.3. Size:11K semelab
2n6560.pdf 
2N6560Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 450V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
9.4. Size:12K semelab
2n6561.pdf 
2N6561Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 300V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
9.5. Size:150K jmnic
2n6569.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2N6569 DESCRIPTION With TO-3 package Complement to type 2N6594 Wide area of safe operation APPLICATIONS Designed for low voltage amplifier power switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBO
9.6. Size:217K inchange semiconductor
2n6560.pdf 
isc Silicon NPN Power Transistor 2N6560DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =450V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage 450 VCBOV Collector-Emitter Voltage 45
9.7. Size:217K inchange semiconductor
2n6561.pdf 
isc Silicon NPN Power Transistor 2N6561DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =300V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage 300 VCBOV Collector-Emitter Voltage 30
9.8. Size:117K inchange semiconductor
2n6569.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6569 DESCRIPTION With TO-3 package Complement to type 2N6594 Wide area of safe operation APPLICATIONS Designed for low voltage amplifier power switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum rating
Datasheet: SVS5N70F
, SVS5N70MU
, WFP85N06
, 2N5653
, 2N5654
, 2N60A
, 2N60AF
, 2N60G
, 2SK3878
, 2N6659-2
, 2N6659X
, 2N6660-2
, 2N6660C4A
, 2N6660CSM4
, 2N6661-2
, 2N6661CSM4
, 2N6661DCSM
.
History: NCE3080KA
Keywords - 2N6568 MOSFET datasheet
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