2N6784U MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2N6784U
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 20 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
   Paquete / Cubierta: LCC18

Búsqueda de reemplazo de MOSFET 2N6784U

2N6784U Datasheet (PDF)

..1. Size:176K microsemi
2n6784u.pdf

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/556 DEVICES LEVELS 2N6784 2N6784U JANJANTXJANTXVABSOLUTE MAXIMUM RATINGS (TC = +25C u

8.1. Size:130K international rectifier
2n6784 irff210.pdf

PD - 90424CIRFF210REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6784HEXFETTRANSISTORS JANTXV2N6784THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/556200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF210 200V 1.5 2.25AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processin

9.1. Size:102K 1
2n6781 2n6782.pdf

9.2. Size:131K international rectifier
2n6788 irff120.pdf

PD - 90426CIRFF120REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6788HEXFETTRANSISTORS JANTXV2N6788THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/555100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF120 100V 0.30 6.0AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processin

9.3. Size:131K international rectifier
2n6782 irff110.pdf

PD - 90423CIRFF110REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6782HEXFETTRANSISTORS JANTXV2N6782THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/556100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF110 100V .60 3.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing

9.4. Size:103K international rectifier
2n6786u.pdf

PD - 91782IRFE310REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6786UHEXFET TRANSISTOR JANTXV2N6786U[REF:MIL-PRF-19500/556]N - CHANNEL 400Volt, 3.6, HEXFETProduct SummaryThe leadless chip carrier (LCC) package representsPart Number BVDSS RDS(on) IDthe logical next step in the continual evolution ofIRFE310 400V 3.6 1.25Asurface mount technology. T

9.5. Size:129K international rectifier
2n6786 irff310.pdf

PD - 90425CIRFF310REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6786HEXFETTRANSISTORS JANTXV2N6786THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/556400V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF310 400V 3.6 1.25AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processin

9.6. Size:99K international rectifier
irff1xx irff2xx irff3xx irff4xx 2n678x 2n679x 2n680x.pdf

9.7. Size:23K semelab
2n6782.pdf

2N6782MECHANICAL DATADimensions in mm (inches)NCHANNEL 8.89 (0.35)9.40 (0.37)7.75 (0.305)POWER MOSFET8.51 (0.335)4.19 (0.165)4.95 (0.195)0.89max.(0.035)12.70(0.500)APPLICATIONS7.75 (0.305)min.8.51 (0.335)dia. FAST SWITCHING MOTOR CONTROLS5.08 (0.200)typ. POWER SUPPLIES2.542(0.100)1 30.66 (0.026)1.14 (0.045)0.71 (0.028)

9.8. Size:12K semelab
2n6788l.pdf

2N6788LDimensions in mm (inches). N-Channel MOSFET 8.64 (0.34)9.40 (0.37)8.01 (0.315) in a 9.01 (0.355)Hermetically sealed TO39 4.06 (0.16)4.57 (0.18)Metal Package. 0.89 max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)dia.N-Channel MOSFET. 5.08 (0.200)typ.VDSS = 100V 2.54ID = 4.5A 2(0.100)1 30.74 (0.029)RDS(ON) = 0.3

9.9. Size:23K semelab
2n6788lcc4.pdf

2N6788LCC4IRFE120MECHANICAL DATADimensions in mm (inches)NCHANNEL POWER MOSFETENHANCEMENT MODE9.14 (0.360)1.27 (0.050) 8.64 (0.340)1.07 (0.040) 2.16 (0.085)12 13 14 15 16FEATURES1.39 (0.055)1.02 (0.040)11 17 AVALANCHE ENERGY RATING10 187.62 (0.300)7.12 (0.280)9 1 SIMPLE DRIVE REQUIREMENTS0.76 (0.030)8 20.51 (0.020) HERMETICALLY SE

9.10. Size:12K semelab
2n6786.pdf

2N6786Dimensions in mm (inches). N-Channel MOSFET 8.64 (0.34)9.40 (0.37)8.01 (0.315) in a 9.01 (0.355)Hermetically sealed TO39 4.06 (0.16)4.57 (0.18)Metal Package. 0.89 max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)dia.N-Channel MOSFET. 5.08 (0.200)typ.VDSS = 400V 2.54ID = 1.25A 2(0.100)1 30.74 (0.029)RDS(ON) = 3.6

9.11. Size:96K microsemi
2n6782u.pdf

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/556 DEVICES LEVELS JAN 2N6782 2N6782UJANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain Source Voltag

9.12. Size:178K microsemi
2n6788u.pdf

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/555 DEVICES LEVELS 2N6788 2N6788U JANJANTXJANTXVABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value UnitDrain Source Voltage VDS

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

Liste

Recientemente añadidas las descripciónes de los transistores: