2N6784U Specs and Replacement
Type Designator: 2N6784U
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: LCC18
- MOSFET ⓘ Cross-Reference Search
2N6784U datasheet
..1. Size:176K microsemi
2n6784u.pdf 
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Tel +353 (0) 65 6840044 Fax +353 (0) 65 6822298 Website http //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/556 DEVICES LEVELS 2N6784 2N6784U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25 C u... See More ⇒
8.1. Size:130K international rectifier
2n6784 irff210.pdf
PD - 90424C IRFF210 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6784 HEXFET TRANSISTORS JANTXV2N6784 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/556 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF210 200V 1.5 2.25A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processin... See More ⇒
9.2. Size:131K international rectifier
2n6788 irff120.pdf
PD - 90426C IRFF120 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6788 HEXFET TRANSISTORS JANTXV2N6788 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/555 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF120 100V 0.30 6.0A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processin... See More ⇒
9.3. Size:131K international rectifier
2n6782 irff110.pdf
PD - 90423C IRFF110 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6782 HEXFET TRANSISTORS JANTXV2N6782 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/556 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF110 100V .60 3.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing... See More ⇒
9.4. Size:103K international rectifier
2n6786u.pdf
PD - 91782 IRFE310 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6786U HEXFET TRANSISTOR JANTXV2N6786U [REF MIL-PRF-19500/556] N - CHANNEL 400Volt, 3.6 , HEXFET Product Summary The leadless chip carrier (LCC) package represents Part Number BVDSS RDS(on) ID the logical next step in the continual evolution of IRFE310 400V 3.6 1.25A surface mount technology. T... See More ⇒
9.5. Size:129K international rectifier
2n6786 irff310.pdf
PD - 90425C IRFF310 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6786 HEXFET TRANSISTORS JANTXV2N6786 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/556 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF310 400V 3.6 1.25A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processin... See More ⇒
9.7. Size:23K semelab
2n6782.pdf
2N6782 MECHANICAL DATA Dimensions in mm (inches) N CHANNEL 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) POWER MOSFET 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 0.89 max. (0.035) 12.70 (0.500) APPLICATIONS 7.75 (0.305) min. 8.51 (0.335) dia. FAST SWITCHING MOTOR CONTROLS 5.08 (0.200) typ. POWER SUPPLIES 2.54 2 (0.100) 1 3 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) ... See More ⇒
9.8. Size:12K semelab
2n6788l.pdf
2N6788L Dimensions in mm (inches). N-Channel MOSFET 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) in a 9.01 (0.355) Hermetically sealed TO39 4.06 (0.16) 4.57 (0.18) Metal Package. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET. 5.08 (0.200) typ. VDSS = 100V 2.54 ID = 4.5A 2 (0.100) 1 3 0.74 (0.029) RDS(ON) = 0.3 ... See More ⇒
9.9. Size:23K semelab
2n6788lcc4.pdf
2N6788LCC4 IRFE120 MECHANICAL DATA Dimensions in mm (inches) N CHANNEL POWER MOSFET ENHANCEMENT MODE 9.14 (0.360) 1.27 (0.050) 8.64 (0.340) 1.07 (0.040) 2.16 (0.085) 12 13 14 15 16 FEATURES 1.39 (0.055) 1.02 (0.040) 11 17 AVALANCHE ENERGY RATING 10 18 7.62 (0.300) 7.12 (0.280) 9 1 SIMPLE DRIVE REQUIREMENTS 0.76 (0.030) 8 2 0.51 (0.020) HERMETICALLY SE... See More ⇒
9.10. Size:12K semelab
2n6786.pdf
2N6786 Dimensions in mm (inches). N-Channel MOSFET 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) in a 9.01 (0.355) Hermetically sealed TO39 4.06 (0.16) 4.57 (0.18) Metal Package. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET. 5.08 (0.200) typ. VDSS = 400V 2.54 ID = 1.25A 2 (0.100) 1 3 0.74 (0.029) RDS(ON) = 3.6 ... See More ⇒
9.11. Size:96K microsemi
2n6782u.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/556 DEVICES LEVELS JAN 2N6782 2N6782U JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain Source Voltag... See More ⇒
9.12. Size:178K microsemi
2n6788u.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/555 DEVICES LEVELS 2N6788 2N6788U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain Source Voltage VDS... See More ⇒
Detailed specifications: 2N6660-2, 2N6660C4A, 2N6660CSM4, 2N6661-2, 2N6661CSM4, 2N6661DCSM, 2N6661M1A, 2N6782U, IRLB4132, 2N6786U, 2N6788L, 2N6788LCC4, 2N6788U, 2N6790U, 2N6792U, 2N6794U, 2N6796LCC4
Keywords - 2N6784U MOSFET specs
2N6784U cross reference
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2N6784U replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
