2N6788L Todos los transistores

 

2N6788L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N6788L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 20 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 70 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
   Paquete / Cubierta: TO39
     - Selección de transistores por parámetros

 

2N6788L Datasheet (PDF)

 ..1. Size:12K  semelab
2n6788l.pdf pdf_icon

2N6788L

2N6788LDimensions in mm (inches). N-Channel MOSFET 8.64 (0.34)9.40 (0.37)8.01 (0.315) in a 9.01 (0.355)Hermetically sealed TO39 4.06 (0.16)4.57 (0.18)Metal Package. 0.89 max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)dia.N-Channel MOSFET. 5.08 (0.200)typ.VDSS = 100V 2.54ID = 4.5A 2(0.100)1 30.74 (0.029)RDS(ON) = 0.3

 0.1. Size:23K  semelab
2n6788lcc4.pdf pdf_icon

2N6788L

2N6788LCC4IRFE120MECHANICAL DATADimensions in mm (inches)NCHANNEL POWER MOSFETENHANCEMENT MODE9.14 (0.360)1.27 (0.050) 8.64 (0.340)1.07 (0.040) 2.16 (0.085)12 13 14 15 16FEATURES1.39 (0.055)1.02 (0.040)11 17 AVALANCHE ENERGY RATING10 187.62 (0.300)7.12 (0.280)9 1 SIMPLE DRIVE REQUIREMENTS0.76 (0.030)8 20.51 (0.020) HERMETICALLY SE

 8.1. Size:131K  international rectifier
2n6788 irff120.pdf pdf_icon

2N6788L

PD - 90426CIRFF120REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6788HEXFETTRANSISTORS JANTXV2N6788THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/555100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF120 100V 0.30 6.0AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processin

 8.2. Size:178K  microsemi
2n6788u.pdf pdf_icon

2N6788L

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/555 DEVICES LEVELS 2N6788 2N6788U JANJANTXJANTXVABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value UnitDrain Source Voltage VDS

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: NTB6410AN | SDF1NA60

 

 
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