2N6788L MOSFET. Datasheet pdf. Equivalent

   Type Designator: 2N6788L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 17 nC
   trⓘ - Rise Time: 70 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO39

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