2303 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2303 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2303

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 1.9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 35 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm

Encapsulados: SOT-23

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2303 datasheet

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2303.pdf pdf_icon

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rn2301 rn2302 rn2303 rn2304 rn2305 rn2306.pdf pdf_icon

RN2301 RN2306 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2301,RN2302,RN2303 RN2304,RN2305,RN2306 Unit mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1301to1306 Equivalent Circuit Bias Resi

0.2. Size:227K vishay
si2303cds.pdf pdf_icon

Si2303CDS Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.190 at VGS = - 10 V - 2.7 TrenchFET Power MOSFET - 30 2 nC 100 % Rg Tested 0.330 at VGS = - 4.5 V - 2.1 100 % UIS Tested APPLICATIONS Load Switch TO-236 (SOT-23) G 1 3 D

0.3. Size:65K vishay
si2303ds.pdf pdf_icon

Si2303DS Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.240 @ VGS = 10 V 1.7 30 30 0.460 @ VGS = 4.5 V 1.3 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2303DS (A3)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V V Gate-Source Volta

0.4. Size:217K vishay
sq2303es.pdf pdf_icon

SQ2303ES www.vishay.com Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 C MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) - 30 TrenchFET Power MOSFET RDS(on) ( ) at VGS = - 10 V 0.170 AEC-Q101 Qualifiedc RDS(on) ( ) at VGS = - 4.5 V 0.370 100 % Rg and UIS Tested ID (A) - 2.5 Compliant to RoHS Directive 2

0.5. Size:206K vishay
si2303bds.pdf pdf_icon

Si2303BDS Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( ) ID (A)b Pb-free 0.200 at VGS = - 10 V Available - 1.64 - 30 0.380 at VGS = - 4.5 V RoHS* - 1.0 COMPLIANT TO-236 (SOT-23) G 1 3 D S 2 Top View Si2303BDS (L3)* * Marking Code Ordering Information Si2303BDS-T1 Si2303BDS-T1-E3 (Lead (Pb)-

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si2303cd.pdf pdf_icon

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si2303.pdf pdf_icon

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tsm2303cx.pdf pdf_icon

TSM2303 30V P-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Source 3. Drain 180 @ VGS =-10V -1.3 -30 300 @ VGS =-4.5V -1.1 Block Diagram Features Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Portable Devices High Speed Switch Ordering Info

0.9. Size:846K jiangsu
cj2303.pdf pdf_icon

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2303 P-Channel 30-V(D-S) MOSFET ID SOT-23 V(BR)DSS RDS(on)MAX 190m @-10V -30V -1.9A 1. GATE 330m @-4.5V 2. SOURCE 3. DRAIN APPLICATION FEATURE Load Switch for Portable Devices TrenchFET Power MOSFET DC/DC Converter MARKING Equivalent Circuit Maximum ratings (Ta=

0.10. Size:898K kec
ku2303k.pdf pdf_icon

SEMICONDUCTOR KU2303K TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter. FEATURES VDSS=30V, ID=66A. Low Drain to Source On-state Resistance. RDS(ON)=7.4m (Max.) @ VGS=10V RDS(ON)

0.11. Size:808K kec
ku2303d.pdf pdf_icon

SEMICONDUCTOR KU2303D TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche A K DIM MILLIMETERS L characteristics. It is mainly suitable for DC/DC Converter. C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 _ C 5.34 + 0.30 _ D 0.70 + 0.20 _ E 2.70 + 0.15

0.12. Size:804K kec
ku2303q.pdf pdf_icon

SEMICONDUCTOR KU2303Q TECHNICAL DATA N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly H suitable for DC/DC Converter and Battery pack. T D P G L U FEATURES A VDSS=30V, ID=14A. DIM MILLIMETERS Drain to Source On Resistance

0.13. Size:132K cet
ces2303.pdf pdf_icon

CES2303 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -1.9A, RDS(ON) = 150m (typ) @VGS = -10V. RDS(ON) = 230m (typ) @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units

0.14. Size:203K cet
ced2303 ceu2303.pdf pdf_icon

CED2303/CEU2303 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -9A, RDS(ON) = 200m @VGS = -10V. RDS(ON) = 320m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK)

0.15. Size:443K willas
se2303.pdf pdf_icon

FM120-M WILLAS THRU SE2303 SOT-23 Plastic-Encapsulate MOSFETS FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimize

0.16. Size:403K aosemi
aons32303.pdf pdf_icon

AONS32303 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 200A High Current Capability RDS(ON) (at VGS=10V)

0.17. Size:94K ape
ap2303gn-hf.pdf pdf_icon

AP2303GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V Small Package Outline RDS(ON) 240m D Surface Mount Device ID - 1.9A RoHS Compliant & Halogen-Free S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,

0.18. Size:94K ape
ap2303gn.pdf pdf_icon

AP2303GN RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V Small Package Outline RDS(ON) 240m D Surface Mount Device ID - 1.9A S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G low on-resistance and cost-effect

0.19. Size:245K analog power
am2303p.pdf pdf_icon

Analog Power AM2303P P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY These miniature surface mount MOSFETs utilize a high cell density trench process to provide low VDS (V) rDS(on) (OHM) ID (A) rDS(on) and to ensure minimal power loss and heat 0.100 @ VGS = -4.5V -2.9 dissipation. Typical applications are DC-DC converters and power management in portable and -20 0.160 @ VGS = -2.5V -

0.20. Size:696K alfa-mos
afp2303a.pdf pdf_icon

AFP2303A Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2303A, P-Channel enhancement mode -30V/-2.8A,RDS(ON)=145m @VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-2.4A,RDS(ON)=180m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

0.21. Size:564K alfa-mos
afp2303.pdf pdf_icon

AFP2303 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2303, P-Channel enhancement mode -30V/-3.6A,RDS(ON)=130m @VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-3.2A,RDS(ON)=170m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

0.22. Size:243K shenzhen
si2303.pdf pdf_icon

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2303 P-Channel, 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A)b 0.240 @ VGS = 10 V 1.4 30 0.460 @ VGS = 4.5 V 1.0 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2303DS (A3T)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Unit Drain-Source V

0.23. Size:702K cystek
mtp2303n3.pdf pdf_icon

Spec. No. C426N3 Issued Date 2008.03.24 CYStech Electronics Corp. Revised Date Page No. 1/8 P-CHANNEL Enhancement Mode MOSFET MTP2303N3 Description The MTP2303N3 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. Features V =-30V DS

0.24. Size:1994K blue-rocket-elect
brcs2303ma.pdf pdf_icon

BRCS2303MA Rev.A Aug.-2023 DATA SHEET / Descriptions SOT-23 P P- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features V =-30V I =-3.2A DS D R DS(ON)@-10V 90m (Typ.54m ) R DS(ON)@-4.5V 110m (Typ.63m ) HF Product. / Applications Not

0.25. Size:256K sino
sm2303psa.pdf pdf_icon

SM2303PSA P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-4A, D RDS(ON) = 56m (max.) @ VGS =-10V S RDS(ON) = 88m (max.) @ VGS =-4.5V G Reliable and Rugged Top View of SOT-23-3 Lead Free and Green Devices Available (RoHS Compliant) D Applications G Power Management in Notebook Computer, Portable Equipment and Battery Powered S Systems. P-Channel MOSFE

0.26. Size:498K sino
apm2303a.pdf pdf_icon

APM2303A P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-4A, D RDS(ON)=55m (max.) @ VGS=-10V S RDS(ON)=70m (max.) @ VGS=-4.5V G RDS(ON)=115m (max.) @ VGS=-2.5V Top View of SOT-23-3 Super High Dense Cell Design D Reliable and Rugged Enhance ESD Cell Protection Lead Free and Green Devices Available (RoHS Compliant) G Applications P

0.27. Size:921K tysemi
ki2303ds.pdf pdf_icon

SMD Type IC SMD Type MOSFE SMD Type MOSFET SMD Type MOSFET SMD Type MOSFET SMD Type IC Product specification KI2303 DS SOT-23 Unit mm +0.1 2.9-0.1 Features +0.1 0.4-0.1 VDS (V) = -30V 3 ID = -1.4 A RDS(ON)

0.28. Size:1532K kexin
si2303ds-3.pdf pdf_icon

SMD Type MOSFET P-Channel Enhancement MOSFET SI2303DS (KI2303DS) SOT-23-3 Unit mm +0.2 2.9-0.1 Features +0.1 0.4 -0.1 VDS (V) =-30V 3 RDS(ON) 200m (VGS =-10V) RDS(ON) 380m (VGS =-4.5V) 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 G 1 3 D 1. Gate S 2 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Ratin

0.29. Size:1499K kexin
si2303ds.pdf pdf_icon

SMD Type MOSFET P-Channel Enhancement MOSFET SI2303DS (KI2303DS) Features SOT-23 Unit mm +0.1 VDS (V) =-30V 2.9 -0.1 +0.1 0.4-0.1 RDS(ON) 200m (VGS =-10V) 3 RDS(ON) 380m (VGS =-4.5V) 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 G 1 3 D 1.Gate 2.Source S 2 3.Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

0.30. Size:1849K kexin
si2303bds.pdf pdf_icon

SMD Type MOSFET P-Channel Enhancement MOSFET SI2303BDS (KI2303BDS) Features SOT-23 Unit mm +0.1 VDS (V) =-30V 2.9 -0.1 +0.1 0.4 -0.1 RDS(ON) 200m (VGS =-10V) 3 RDS(ON) 380m (VGS =-4.5V) 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 G 1 3 D 1.Gate S 2 2.Source 3.Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 sec Steady

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ki2303bds.pdf pdf_icon

SMD Type Transistors P-Channel, 30-V (G-S) MOSFET KI2303BDS SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 3 RoH Lead (Pb)-Free Version is RoHS Compliant. 12 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS -30 V Gate-

0.32. Size:1898K kexin
si2303bds-3.pdf pdf_icon

SMD Type MOSFET P-Channel Enhancement MOSFET SI2303BDS (KI2303BDS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 Features 0.4 -0.1 3 VDS (V) =-30V RDS(ON) 200m (VGS =-10V) RDS(ON) 380m (VGS =-4.5V) 1 2 +0.02 +0.1 0.15 -0.02 0.95-0.1 +0.1 G 1 1.9-0.2 3 D S 2 1.Gate 2.Source 3.Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 sec St

0.33. Size:1589K kexin
si2303 ki2303.pdf pdf_icon

SMD Type MOSFET P-Channel Enhancement MOSFET SI2303 (KI2303) SOT-23-3 Unit mm +0.2 2.9-0.1 Features +0.1 0.4 -0.1 VDS (V) =-30V 3 RDS(ON) 200m (VGS =-10V) RDS(ON) 380m (VGS =-4.5V) 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 G 1 3 D 1. Gate S 2 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Un

0.34. Size:454K ait semi
am2303.pdf pdf_icon

AiT Semiconductor Inc. AM2303 www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM2303 is the P-Channel logic enhancement -30V/-4.3A, R =50m (typ.)@V =-10V DS(ON) GS mode power field effect transistor is produced using -30V/-3.5A, R =58m (typ.)@V =-4.5V DS(ON) GS high cell density. advanced trench technology to -30V/-2.5A, R =73m (typ.

0.35. Size:214K chenmko
cht2303gp.pdf pdf_icon

CHENMKO ENTERPRISE CO.,LTD CHT2303GP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 1.9 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (2) * High sat

0.36. Size:376K crownpo
ctp2303.pdf pdf_icon

CTP2303 Crownpo Technology CTP2303 P-Channel Enhancement Mode MOSFET Features Description -30V/-1.7A,RDS(ON)=240 m @VGS=- 10V The CTP2303 is the P-Channel logic enhancement -30V/-1.3A,R =460 m @VGS=-4.5V mode power field effect transistors are produced using DS(ON) high cell density , DMOS trench technology. Super high density cell design for extremely low RDS(O

0.37. Size:914K globaltech semi
gsm2303a.pdf pdf_icon

GSM2303A GSM2303A 30V P-Channel Enhancement Mode MOSFET Product Description Features -30V/-2.8A,RDS(ON)=145m @VGS=-10.0V GSM2303A, P-Channel enhancement mode -30V/-2.4A,RDS(ON)=180m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-res

0.38. Size:914K globaltech semi
gsm2303.pdf pdf_icon

GSM2303 GSM2303 30V P-Channel Enhancement Mode MOSFET Product Description Features -30V/-3.6A,RDS(ON)=130m @VGS=-10.0V GSM2303, P-Channel enhancement mode -30V/-3.2A,RDS(ON)=170m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-resist

0.39. Size:976K matsuki electric
me2303 me2303-g.pdf pdf_icon

ME2303/ME2303-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2303 is the P-Channel logic enhancement mode power field RDS(ON) 75m @VGS=-10V effect transistors are produced using high cell density , DMOS trench RDS(ON) 100m @VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(

0.40. Size:329K ncepower
nce2303.pdf pdf_icon

Pb Free Product http //www.ncepower.com NCE2303 NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE2303 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load G switch or in PWM applications. S General Features VDS = -30V,ID = -2.0A Schematic diagram RDS(ON)

0.41. Size:59K sensitron
shd230303.pdf pdf_icon

SENSITRON SHD230303 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 698, REV. - DUAL HERMETIC POWER MOSFET N-CHANNEL 200 VOLT, 0.4 OHM, 9.0A MOSFET Fast Switching Low RDS (on) Equivalent to IRF230 MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25 C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS - - 20 Volts ID - - 9.0 Amps CONTINUOUS

0.42. Size:60K sensitron
shd230302.pdf pdf_icon

SENSITRON SHD230302 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 602, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES 100 Volt, 0.18 Ohm, 7.4A MOSFET Fast Switching Low RDS (on) Equivalent to IRFE130 MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25 C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS - - 20 Volts ID - - 10.8 Amps O

0.43. Size:140K silicon standard
ssm2303gn.pdf pdf_icon

SSM2303N P-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement BVDSS -30V Small package outline RDS(ON) 240m D Surface-mount device ID - 1.7A S SOT-23 G Description D Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G S Absolute Maximum Ratings Symbol Parameter Rating Un

0.44. Size:200K stansontech
st2303srg.pdf pdf_icon

ST2303SRG P Channel Enhancement Mode MOSFET -2.6A DESCRIPTION ST2303SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone a

0.45. Size:388K umw-ic
si2303.pdf pdf_icon

R UMW UMW SI2303 SOT-23 Plastic-Encapsulate MOSFETS P-channel 30-V(D-S) MOSFET SI2303 V(BR)DSS RDS(on)MAX ID 190m @-10V -30 V -1.7A 330m @-4.5V FEATURE TrenchFET Power MOSFET SOT 23 APPLICATION Load Switch for Portable Devices DC/DC Converter 1. GATE MARKING Equivalent Circuit 2. SOURCE 3. DRAIN Maximum ratings ( Ta=25 unless otherwise noted) Parame

0.46. Size:2062K anbon
as2303.pdf pdf_icon

AS2303 P-Channel MOSFET SOT-23 Plastic-Encapsulate MOSFETS Dimensions In Millimeters Dimensions In Inches Symbol Min Max Min Max A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e 0.9

0.47. Size:457K guangdong hottech
hoa2303.pdf pdf_icon

Plastic-Encapsulate Mosfets HOA2303 P-Channel MOSFET FEATURE TrenchFET Power MOSFET APPLICATIONS Load Switch for Portable Devices 1.Gate DC/DC Converter 2.Source SOT-23 3.Drain Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 20 Continuous Drain Current ID -1.9 A Continuous So

0.48. Size:207K microne
mem2303xg-n.pdf pdf_icon

MEM2303 P-Channel MOSFET MEM2303XG-N General Description Features MEM2303XG-N Series P-channel enhancement -30V/-2.9A mode field-effect transistor , These miniature surface RDS(ON), Vgs@-10V, Ids@-2.9A = 92m mount MOSFETs utilize High Cell Density process. RDS(ON), Vgs@-4.5V, Ids@-1.9A = 115m Low RDS(ON) assures minimal power loss and High Density Cell Design For Ultra

0.49. Size:716K microne
mem2303m3.pdf pdf_icon

MEM2303 P-Channel MOSFET MEM2303M3 General Description Features MEM2303M3G Series P-channel enhancement mode -30V/-4.2A field-effect transistor ,produced with high cell density RDS(ON) =55m @ VGS=-10V,ID=-4.2A DMOS trench technology, which is especially used to RDS(ON) =62m @ VGS=-4.5V,ID=-4A minimize on-state resistance. This device particularly RDS(ON) =72m @ VGS=-2.5V,ID=-2.5

0.50. Size:1024K cn szxunrui
si2303.pdf pdf_icon

SOT-23 Plastic-Encapsulate MOSFETS SI2303 P-Channel, 30-V (D-S) MOSFET PRODUCT SUMMARY SOT-23 VDS (V) rDS(on) (W) ID (A)b 0.240 @ VGS = 10 V 1.4 30 3 0.460 @ VGS = 4.5 V 1.0 1.GATE 2.SOURCE 3.DRAIN General FEATURE 1 2 TrenchFET Power MOSFET Lead free product is acquired MARKING Equivalent Circuit Surface mount package APPLICATION A96TF w Load Switc

0.51. Size:1367K winsok
wst2303a.pdf pdf_icon

WST2303A P-Ch MOSFET General Description Product Summery The WST2303A is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and -20V 144m -2.5A gate charge for most of the small power switching and load switch applications. Applications The WST2303A meet the RoHS and Green Product requirement with full

0.52. Size:1058K winsok
wst2303.pdf pdf_icon

WST2303 P-Ch MOSFET General Description Product Summery The WST2303 is the highest performance trench BVDSS RDSON ID P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -20V 65m -3.8A for most of the small power switching and load switch applications. Applications The WST2303 meet the RoHS and Green High Frequency Point-of-Load

0.53. Size:2963K cn vbsemi
apm2303ac.pdf pdf_icon

APM2303AC www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-2

0.54. Size:628K cn yangzhou yangjie elec
yjl2303a.pdf pdf_icon

RoHS COMPLIANT YJL2303A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -30V DS I -3.0A D R ( at V =-10V) 85 mohm DS(ON) GS R ( at V =-4.5V) 105 mohm DS(ON) GS General Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Speed switching Applications PMW applicatio

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