RN2301~RN2306 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2301,RN2302,RN2303 RN2304,RN2305,RN2306 Unit: mmSwitching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1301to1306 Equivalent Circuit Bias Resi

Si2303CDSVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.190 at VGS = - 10 V - 2.7 TrenchFET Power MOSFET- 30 2 nC 100 % Rg Tested0.330 at VGS = - 4.5 V - 2.1 100 % UIS TestedAPPLICATIONS Load SwitchTO-236(SOT-23)G 1 3 D

Si2303DSVishay SiliconixP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.240 @ VGS = 10 V 1.730300.460 @ VGS = 4.5 V 1.3 TO-236(SOT-23)G 13 DS 2Top ViewSi2303DS (A3)**Marking CodeABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS 30VVGate-Source Volta

SQ2303ESwww.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) - 30 TrenchFET Power MOSFETRDS(on) () at VGS = - 10 V 0.170 AEC-Q101 QualifiedcRDS(on) () at VGS = - 4.5 V 0.370 100 % Rg and UIS TestedID (A) - 2.5 Compliant to RoHS Directive 2

Si2303BDSVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)bPb-free0.200 at VGS = - 10 V Available- 1.64- 300.380 at VGS = - 4.5 V RoHS*- 1.0COMPLIANTTO-236(SOT-23)G 13 DS 2Top ViewSi2303BDS (L3)** Marking CodeOrdering Information: Si2303BDS-T1 Si2303BDS-T1-E3 (Lead (Pb)-

Si2303CDSVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.190 at VGS = - 10 V - 2.7 TrenchFET Power MOSFET- 30 2 nC 100 % Rg Tested0.330 at VGS = - 4.5 V - 2.1 100 % UIS TestedAPPLICATIONS Load SwitchTO-236(SOT-23)G 1 3 D

TSM2303 30V P-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 180 @ VGS =-10V -1.3 -30 300 @ VGS =-4.5V -1.1 Block Diagram Features Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Portable Devices High Speed Switch Ordering Info

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2303 P-Channel 30-V(D-S) MOSFET ID SOT-23 V(BR)DSS RDS(on)MAX 190m@-10V-30V-1.9A1. GATE 330m@-4.5V2. SOURCE 3. DRAIN APPLICATION FEATURE Load Switch for Portable Devices TrenchFET Power MOSFET DC/DC Converter MARKING Equivalent Circuit Maximum ratings (Ta=

SEMICONDUCTOR KU2303KTECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalanchecharacteristics. It is mainly suitable for DC/DC Converter.FEATURES VDSS=30V, ID=66A.Low Drain to Source On-state Resistance.: RDS(ON)=7.4m(Max.) @ VGS=10V: RDS(ON)

SEMICONDUCTOR KU2303DTECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheA KDIM MILLIMETERSLcharacteristics. It is mainly suitable for DC/DC Converter.C D_A 6.60 + 0.20_B 6.10 + 0.20_C 5.34 + 0.30_D 0.70 + 0.20_E 2.70 + 0.15

SEMICONDUCTOR KU2303QTECHNICAL DATA N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switching time, lowon resistance, low gate charge and excellent avalanche characteristiscs. It is mainlyHsuitable for DC/DC Converter and Battery pack.TD P GLUFEATURES AVDSS=30V, ID=14A.DIM MILLIMETERSDrain to Source On Resistance

CES2303P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -1.9A, RDS(ON) = 150m (typ) @VGS = -10V. RDS(ON) = 230m (typ) @VGS = -4.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead free product is acquired.SOT-23 package.GDSGSSOT-23ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit Units

CED2303/CEU2303P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-30V, -9A, RDS(ON) = 200m @VGS = -10V. RDS(ON) = 320m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).DHigh power and current handing capability.Lead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)

FM120-MWILLASTHRUSE2303 SOT-23 Plastic-Encapsulate MOSFETS FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize

AONS3230330V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 200A High Current Capability RDS(ON) (at VGS=10V)

AP2303GN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V Small Package Outline RDS(ON) 240mD Surface Mount Device ID - 1.9A RoHS Compliant & Halogen-FreeSSOT-23GDescription DAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,

AP2303GNRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V Small Package Outline RDS(ON) 240mD Surface Mount Device ID - 1.9ASSOT-23GDescription DAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Glow on-resistance and cost-effect

Analog Power AM2303PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low VDS (V) rDS(on) (OHM) ID (A)rDS(on) and to ensure minimal power loss and heat 0.100 @ VGS = -4.5V -2.9dissipation. Typical applications are DC-DC converters and power management in portable and -20 0.160 @ VGS = -2.5V -

AFP2303A Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2303A, P-Channel enhancement mode -30V/-2.8A,RDS(ON)=145m@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-2.4A,RDS(ON)=180m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

AFP2303 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2303, P-Channel enhancement mode -30V/-3.6A,RDS(ON)=130m@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-3.2A,RDS(ON)=170m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2303P-Channel, 30-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)b0.240 @ VGS = 10 V 1.4300.460 @ VGS = 4.5 V 1.0TO-236(SOT-23)G 13 DS 2Top ViewSi2303DS (A3T)**Marking CodeABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol 5 sec Steady State UnitDrain-Source V

Spec. No. : C426N3 Issued Date : 2008.03.24 CYStech Electronics Corp.Revised Date : Page No. : 1/8 P-CHANNEL Enhancement Mode MOSFET MTP2303N3 Description The MTP2303N3 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. Features V =-30V DS

BRCS2303MA Rev.A Aug.-2023 DATA SHEET / Descriptions SOT-23 P P- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features V =-30V I =-3.2A DS DRDS(ON)@-10V90m(Typ.54m) RDS(ON)@-4.5V110m(Typ.63m) HF Product. / Applications Not

SM2303PSAP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-4A,DRDS(ON) = 56m (max.) @ VGS =-10VSRDS(ON) = 88m (max.) @ VGS =-4.5VG Reliable and RuggedTop View of SOT-23-3 Lead Free and Green Devices Available(RoHS Compliant)DApplicationsG Power Management in Notebook Computer,Portable Equipment and Battery PoweredSSystems.P-Channel MOSFE

APM2303AP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-4A, D RDS(ON)=55m (max.) @ VGS=-10VS RDS(ON)=70m (max.) @ VGS=-4.5VG RDS(ON)=115m (max.) @ VGS=-2.5VTop View of SOT-23-3 Super High Dense Cell DesignD Reliable and Rugged Enhance ESD Cell Protection Lead Free and Green Devices Available(RoHS Compliant)GApplications P

SMD Type ICSMD Type MOSFESMD Type MOSFETSMD Type MOSFETSMD Type MOSFETSMD Type ICProduct specification KI2303DSSOT-23Unit: mm+0.12.9-0.1 Features+0.10.4-0.1 VDS (V) = -30V 3 ID = -1.4 A RDS(ON)

SMD Type MOSFETP-Channel Enhancement MOSFET SI2303DS (KI2303DS)SOT-23-3Unit: mm+0.22.9-0.1 Features+0.10.4 -0.1 VDS (V) =-30V3 RDS(ON) 200m (VGS =-10V) RDS(ON) 380m (VGS =-4.5V)1 2+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2G 13 D1. GateS 22. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Ratin

SMD Type MOSFETP-Channel Enhancement MOSFET SI2303DS (KI2303DS) FeaturesSOT-23Unit: mm+0.1 VDS (V) =-30V2.9 -0.1+0.10.4-0.1 RDS(ON) 200m (VGS =-10V)3 RDS(ON) 380m (VGS =-4.5V)1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1G 13 D1.Gate2.SourceS 23.Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

SMD Type MOSFETP-Channel Enhancement MOSFET SI2303BDS (KI2303BDS) FeaturesSOT-23Unit: mm+0.1 VDS (V) =-30V2.9 -0.1+0.10.4 -0.1 RDS(ON) 200m (VGS =-10V)3 RDS(ON) 380m (VGS =-4.5V)1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1G 13 D1.GateS 22.Source3.Drain Absolute Maximum Ratings Ta = 25Parameter Symbol 5 sec Steady

SMD Type TransistorsP-Channel, 30-V (G-S) MOSFETKI2303BDSSOT-23Unit: mm+0.12.9-0.1+0.10.4-0.1Features3RoH Lead (Pb)-Free Version is RoHS Compliant.12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base1. Gate2.Emitter2. Source3. Drain3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol 5 sec Steady State UnitDrain-Source Voltage VDS -30 VGate-

SMD Type MOSFETP-Channel Enhancement MOSFET SI2303BDS (KI2303BDS)SOT-23-3Unit: mm+0.22.9 -0.1+0.1 Features0.4 -0.13 VDS (V) =-30V RDS(ON) 200m (VGS =-10V) RDS(ON) 380m (VGS =-4.5V)1 2+0.02+0.10.15 -0.020.95-0.1+0.1G 1 1.9-0.23 DS 21.Gate2.Source3.Drain Absolute Maximum Ratings Ta = 25Parameter Symbol 5 sec St

SMD Type MOSFETP-Channel Enhancement MOSFET SI2303 (KI2303)SOT-23-3Unit: mm+0.22.9-0.1 Features+0.10.4 -0.1 VDS (V) =-30V3 RDS(ON) 200m (VGS =-10V) RDS(ON) 380m (VGS =-4.5V)1 2+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2G 13 D1. GateS 22. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Un

AiT Semiconductor Inc. AM2303 www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM2303 is the P-Channel logic enhancement -30V/-4.3A, R =50m(typ.)@V =-10V DS(ON) GSmode power field effect transistor is produced using -30V/-3.5A, R =58m(typ.)@V =-4.5V DS(ON) GShigh cell density. advanced trench technology to -30V/-2.5A, R =73m(typ.

CHENMKO ENTERPRISE CO.,LTDCHT2303GPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 1.9 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High sat

CTP2303Crownpo TechnologyCTP2303 P-Channel Enhancement Mode MOSFET FeaturesDescription -30V/-1.7A,RDS(ON)=240 m @VGS=- 10V The CTP2303 is the P-Channel logic enhancement -30V/-1.3A,R =460 m @VGS=-4.5V modepower field effect transistors are produced using DS(ON)high cell density , DMOS trench technology. Super high density cell design for extremelylow RDS(O

GSM2303A GSM2303A 30V P-Channel Enhancement Mode MOSFET Product Description Features -30V/-2.8A,RDS(ON)=145m@VGS=-10.0V GSM2303A, P-Channel enhancement mode -30V/-2.4A,RDS(ON)=180m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-res

GSM2303 GSM2303 30V P-Channel Enhancement Mode MOSFET Product Description Features -30V/-3.6A,RDS(ON)=130m@VGS=-10.0V GSM2303, P-Channel enhancement mode -30V/-3.2A,RDS(ON)=170m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-resist

ME2303/ME2303-G P-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME2303 is the P-Channel logic enhancement mode power field RDS(ON) 75m@VGS=-10Veffect transistors are produced using high cell density , DMOS trench RDS(ON) 100m@VGS=-4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely low RDS(

Pb Free Producthttp://www.ncepower.com NCE2303NCE P-Channel Enhancement Mode Power MOSFET Description DThe NCE2303 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load Gswitch or in PWM applications. SGeneral Features VDS = -30V,ID = -2.0A Schematic diagram RDS(ON)

SENSITRON SHD230303SEMICONDUCTORTECHNICAL DATADATA SHEET 698, REV. -DUAL HERMETIC POWER MOSFETN-CHANNEL 200 VOLT, 0.4 OHM, 9.0A MOSFET Fast Switching Low RDS (on) Equivalent to IRF230MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGATE TO SOURCE VOLTAGE VGS - - 20VoltsID - - 9.0 AmpsCONTINUOUS

SENSITRON SHD230302 SEMICONDUCTORTECHNICAL DATADATA SHEET 602, REV -HERMETIC POWER MOSFETN-CHANNELFEATURES: 100 Volt, 0.18 Ohm, 7.4A MOSFET Fast Switching Low RDS (on) Equivalent to IRFE130MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGATE TO SOURCE VOLTAGE VGS - - 20VoltsID - - 10.8 AmpsO

SSM2303NP-CHANNEL ENHANCEMENT-MODE POWER MOSFETSimple drive requirement BVDSS -30VSmall package outline RDS(ON) 240mDSurface-mount device ID - 1.7ASSOT-23GDescriptionDPower MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching, low on-resistance and cost-effectiveness. GSAbsolute Maximum RatingsSymbol Parameter Rating Un

ST2303SRG P Channel Enhancement Mode MOSFET -2.6A DESCRIPTION ST2303SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone a

RUMW UMW SI2303 SOT-23 Plastic-Encapsulate MOSFETSP-channel 30-V(D-S) MOSFETSI2303V(BR)DSS RDS(on)MAX ID190m@-10V-30 V -1.7A330m@-4.5VFEATURE TrenchFET Power MOSFETSOT23 APPLICATION Load Switch for Portable Devices DC/DC Converter1. GATE MARKING Equivalent Circuit2. SOURCE 3. DRAIN Maximum ratings ( Ta=25 unless otherwise noted)Parame

AS2303 P-Channel MOSFET SOT-23 Plastic-Encapsulate MOSFETS Dimensions In Millimeters Dimensions In InchesSymbolMin Max Min MaxA 0.900 1.150 0.035 0.045A1 0.000 0.100 0.000 0.004A2 0.900 1.050 0.035 0.041b 0.300 0.500 0.012 0.020c 0.080 0.150 0.003 0.006D 2.800 3.000 0.110 0.118E 1.200 1.400 0.047 0.055E1 2.250 2.550 0.089 0.100e 0.9

Plastic-Encapsulate MosfetsHOA2303 P-Channel MOSFETFEATURE TrenchFET Power MOSFET APPLICATIONS Load Switch for Portable Devices 1.Gate DC/DC Converter 2.SourceSOT-233.DrainMaximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value UnitDrain-Source Voltage VDS -30 V Gate-Source Voltage VGS 20 Continuous Drain Current ID -1.9A Continuous So

MEM2303 P-Channel MOSFET MEM2303XG-N General Description Features MEM2303XG-N Series P-channel enhancement -30V/-2.9A mode field-effect transistor , These miniature surface RDS(ON), Vgs@-10V, Ids@-2.9A = 92m mount MOSFETs utilize High Cell Density process. RDS(ON), Vgs@-4.5V, Ids@-1.9A = 115m Low RDS(ON) assures minimal power loss and High Density Cell Design For Ultra

MEM2303 P-Channel MOSFET MEM2303M3 General Description Features MEM2303M3G Series P-channel enhancement mode -30V/-4.2A field-effect transistor ,produced with high cell density RDS(ON) =55m@ VGS=-10V,ID=-4.2A DMOS trench technology, which is especially used to RDS(ON) =62m@ VGS=-4.5V,ID=-4A minimize on-state resistance. This device particularly RDS(ON) =72m@ VGS=-2.5V,ID=-2.5

SOT-23 Plastic-Encapsulate MOSFETSSI2303P-Channel, 30-V (D-S) MOSFETPRODUCT SUMMARYSOT-23VDS (V) rDS(on) (W) ID (A)b0.240 @ VGS = 10 V 1.430 30.460 @ VGS = 4.5 V 1.01.GATE2.SOURCE3.DRAINGeneral FEATURE 12TrenchFET Power MOSFETLead free product is acquiredMARKING Equivalent CircuitSurface mount packageAPPLICATIONA96TF wLoad Switc

WST2303AP-Ch MOSFETGeneral Description Product SummeryThe WST2303A is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and -20V 144m -2.5Agate charge for most of the small power switching and load switch applications. Applications The WST2303A meet the RoHS and Green Product requirement with full

WST2303 P-Ch MOSFETGeneral Description Product SummeryThe WST2303 is the highest performance trench BVDSS RDSON ID P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -20V 65m -3.8Afor most of the small power switching and load switch applications. Applications The WST2303 meet the RoHS and Green High Frequency Point-of-Load

APM2303ACwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-2

RoHS COMPLIANT YJL2303A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -30V DS I -3.0A D R ( at V =-10V) 85 mohm DS(ON) GS R ( at V =-4.5V) 105 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Speed switching Applications PMW applicatio