2304 Todos los transistores

 

2304 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2304
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 50 nS
   Cossⓘ - Capacitancia de salida: 45 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
   Paquete / Cubierta: SOT-23

 Búsqueda de reemplazo de MOSFET 2304

 

2304 Datasheet (PDF)

 ..1. Size:309K  hfzt
2304.pdf

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2304

 0.1. Size:270K  philips
si2304ds.pdf

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SI2304DSN-channel enhancement mode field-effect transistorRev. 01 17 August 2001 Product dataM3D0881. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technologyProduct availability:SI2304DS in SOT23.2. Features TrenchMOS technology Very fast switching Subminiature surface mount package.3. Applications Batte

 0.2. Size:53K  st
msc82304.pdf

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MSC82304RF & MICROWAVE TRANSISTORSGENERAL PURPOSE AMPLIFIER APPLICATIONSPRELIMINARY DATA.REFRACTORY/GOLD METALLIZATION.VSWR CAPABILITY 20:1 @ RATEDCONDITIONS.HERMETIC STRIPAC PACKAGE.P 3.8 W MIN. WITH 10.0 dB GAINOUT =.250 2LFL (S010)hermetically sealedORDER CODE BRANDINGMSC82304 82304PIN CONNECTIONDESCRIPTIONThe MSC82304 is a common base hermeticallysealed

 0.3. Size:454K  toshiba
rn2301 rn2302 rn2303 rn2304 rn2305 rn2306.pdf

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RN2301~RN2306 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2301,RN2302,RN2303 RN2304,RN2305,RN2306 Unit: mmSwitching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1301to1306 Equivalent Circuit Bias Resi

 0.4. Size:186K  vishay
si2304bds.pdf

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Si2304BDSVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.070 at VGS = 10 V 3.2 TrenchFET Power MOSFET30 2.60.105 at VGS = 4.5 V 2.6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTO-236(SOT-23)G 13 DS 2Top ViewSi2304BDS

 0.5. Size:236K  vishay
si2304dds.pdf

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New ProductSi2304DDSVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.060 at VGS = 10 V TrenchFET Power MOSFET3.630 2.1 nC 100 % Rg Tested0.075 at VGS = 4.5 V 3.6 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterT

 0.6. Size:233K  vishay
si2304dd.pdf

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New ProductSi2304DDSVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.060 at VGS = 10 V TrenchFET Power MOSFET3.630 2.1 nC 100 % Rg Tested0.075 at VGS = 4.5 V 3.6 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterT

 0.7. Size:52K  vishay
si2304ds.pdf

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Si2304DSVishay SiliconixN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.117 @ VGS = 10 V 2.530300.190 @ VGS = 4.5 V 2.0TO-236(SOT-23)G 13 DS 2Top ViewSi2304DS (A4)**Marking CodeABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS 30VVGate-Source Voltage VGS "20TA= 25_C 2

 0.8. Size:211K  utc
ut2304.pdf

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UNISONIC TECHNOLOGIES CO., LTD UT2304 Power MOSFET N-CHANNEL ENHANCEMENT MODE 331 12 2 DESCRIPTION The UT2304 is an N-Channel Power MOSFET that can achieve SOT-23-3 SOT-23 (JEDEC TO-236) (EIAJ SC-59)the lowest possible on-resistance, extremely and cost- effectiveness device by using advanced trench technology. SYMBOL Drain1SOT-89GateSource ORDERING IN

 0.9. Size:2634K  jiangsu
cj2304.pdf

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2304 N-Channel MOSFET ID SOT-23 V(BR)DSS RDS(on)MAX 60m@10V30V3.3A1. GATE 75m@4.5V2. SOURCE 3. DRAIN FEATURE APPLICATION TrenchFET Power MOSFET Load Switch for Portable Devices DC/DC Converter MARKING Equivalent Circuit Maximum ratings (Ta=25 unless other

 0.10. Size:460K  willas
se2304.pdf

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FM120-MWILLASTHRUSE2304 SOT-23 Plastic-Encapsulate MOSFETS FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order toN-Channel

 0.11. Size:754K  aosemi
aons32304.pdf

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AONS3230430V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 140A High Current Capability RDS(ON) (at VGS=10V)

 0.12. Size:95K  ape
ap2304gn-hf.pdf

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AP2304GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 25V Small package outline RDS(ON) 117mD Surface mount package ID 2.7A RoHS Compliant & Halogen-FreeSSOT-23GDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Dl

 0.13. Size:140K  ape
ap2304agn.pdf

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AP2304AGN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Package Outline RDS(ON) 117m Surface Mount Device ID 2.5AS RoHS CompliantSOT-23GDDescriptionAP2304A series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possibl

 0.14. Size:140K  ape
ap2304gn.pdf

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AP2304GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 25VD Small package outline RDS(ON) 117m Surface mount package ID 2.7AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, lo

 0.15. Size:92K  ape
ap2304agn-hf.pdf

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AP2304AGN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Package Outline RDS(ON) 117m Surface Mount Device ID 2.5AS RoHS CompliantSOT-23GDescriptionAdvanced Power MOSFETs utilized advanced processing techniques Dto achieve the lowest possible on-resistance, extremel

 0.16. Size:304K  analog power
am2304n.pdf

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Analog Power AM2304NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)12 @ VGS = 10V8.5 Low thermal impedance 3018 @ VGS = 4.5V7.0 Fast switching speed Typical Applications: Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RATINGS (TA =

 0.17. Size:476K  alfa-mos
afn2304s.pdf

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AFN2304S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2304S, N-Channel enhancement mode 30V/3.6A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.5A,RDS(ON)=85m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 0.18. Size:608K  alfa-mos
afn2304as.pdf

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AFN2304AS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2304AS, N-Channel enhancement mode 30V/2.4A,RDS(ON)=65m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=90m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 0.19. Size:563K  alfa-mos
afn2304.pdf

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AFN2304 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2304, N-Channel enhancement mode 30V/3.6A,RDS(ON)=78m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.8A,RDS(ON)=105m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 0.20. Size:604K  alfa-mos
afn2304a.pdf

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AFN2304A Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2304A, N-Channel enhancement mode 30V/2.6A,RDS(ON)=82m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=108m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited f

 0.21. Size:559K  shenzhen
si2304.pdf

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2304N-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.055 @ V 2.5GS = 10 V30300.080 @ VGS = 4.5 V 2.0TO-236(SOT-23)G 13 DS 2Top ViewSi2304 (A4)**Marking CodeABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS 30VVGate-S

 0.22. Size:307K  cystek
mtn2304n3.pdf

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Spec. No. : C737N3 Issued Date : 2011.11.24 CYStech Electronics Corp.Revised Date : 2012.02.10 Page No. : 1/8 30V N-CHANNEL Enhancement Mode MOSFET BVDSS 30VMTN2304N3 ID 5A20m VGS=10V, ID=5A RDSON(TYP) 28m VGS=4.5V, ID=4A Features Simple drive requirement Small package outline Pb-free lead plating and halogen-free package Symbol Outline MTN

 0.23. Size:283K  cystek
mtn2304m3.pdf

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Spec. No. : C737M3 Issued Date : 2012.07.26 CYStech Electronics Corp.Revised Date : 2013.08.12 Page No. : 1/8 30V N-CHANNEL Enhancement Mode MOSFET BVDSS 30VMTN2304M3 ID 6A20m VGS=10V, ID=5A RDSON(TYP) 28m VGS=4.5V, ID=4A Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Pb-free lead plating and halogen-fre

 0.24. Size:1575K  goford
g2304.pdf

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GOFORDG2304DDescription The 2304 uses advanced trench technology to provide Gexcellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. General Features S Schematic diagram VDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @ 10V (Typ)m m 3.630V 61 47 AG2304 High power and current handing capability Lead f

 0.25. Size:497K  sino
apm2304a.pdf

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APM2304A N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/5A,D RDS(ON)= 22m(typ.) @ VGS= 10VS RDS(ON)= 32m(typ.) @ VGS= 4.5VG Super High Dense Cell Design Top View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices AvailableD (RoHS Compliant)ApplicationsG Power Management in Notebook Computer,Portable Equipment and Battery Power

 0.26. Size:166K  sino
sm2304nsa.pdf

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SM2304NSA N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/5.1A,D RDS(ON)=25m(max.) @ VGS=10VS RDS(ON)=35m(max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-3(RoHS Compliant)D 100% UIS + Rg TestedApplicationsG Power Magangement in Notebook Computer,Portable Equipment and Battery Powered Sys

 0.27. Size:281K  first silicon
ftk2304.pdf

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SEMICONDUCTORFTK2304TECHNICAL DATADDESCRIPTIONThe FTK2304 uses advanced trench technology to Gprovide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagramGENERAL FEATURES D VDS = 30V ,ID = 3.3A 3RDS(ON)

 0.28. Size:1510K  kexin
si2304ds.pdf

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SMD Type MOSFETN-Channel Enhancement MOSFET SI2304DS (KI2304DS)SOT-23Unit: mm Features+0.12.9-0.1+0.10.4 -0.1 VDS (V) = 30V3 RDS(ON) 117m (VGS = 10V) RDS(ON) 190m (VGS = 4.5V)1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1G 11.Gate3 D2.SourceS 23.Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

 0.29. Size:1554K  kexin
si2304ds-3.pdf

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SMD Type MOSFETN-Channel Enhancement MOSFET SI2304DS (KI2304DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.1 Features3 VDS (V) = 30V RDS(ON) 117m (VGS = 10V) RDS(ON) 190m (VGS = 4.5V)1 2+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2G 13 D1. GateS 22. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Ratin

 0.30. Size:49K  kexin
ki2304ds.pdf

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SMD Type TransistorsN-Channel 30-V (D-S) MOSFETKI2304DSSOT-23Unit: mm+0.12.9-0.1Features+0.10.4-0.1312+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base1. Gate2.Emitter2. Source3. Drain3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage VDS 30VGate-Source Voltage VGS 20Continuous Drain Current (TJ = 150 ) *

 0.31. Size:1555K  kexin
si2304ds ki2304ds.pdf

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SMD Type MOSFETN-Channel Enhancement MOSFET SI2304DS (KI2304DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.1 Features3 VDS (V) = 30V RDS(ON) 117m (VGS = 10V) RDS(ON) 190m (VGS = 4.5V)1 2+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2G 13 D1. GateS 22. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Ratin

 0.32. Size:549K  ait semi
am2304.pdf

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AiT Semiconductor Inc. AM2304 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES AM2304 is available in a SOT-23 package. 30V/5.1A R = 25m(max.) @ V = 10V DS(ON) GSR = 35m(max.) @ V = 4.5V DS(ON) GS Reliable and Rugged Available in a SOT-23 package. ORDERING INFORMATION APPLICATION Power Management in Notebook Computer, Por

 0.33. Size:219K  chenmko
chm2304gp.pdf

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CHENMKO ENTERPRISE CO.,LTDCHM2304GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 2.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High sat

 0.34. Size:185K  crownpo
ctn2304.pdf

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CTN2304Crownpo TechnologyCTN2304 N-Channel Enhancement Mode MOSFET FeaturesDescription 30V/2.5A,RDS(ON)=117m @VGS=10V The CTN2304 is the N-Channel logic enhancement 20V/2.4A,R =190 m @VGS=4.5V modepower field effect transistors are produced using DS(ON)high cell density , DMOS trench technology. Super high density cell design for extremelylow RDS(ON) Exc

 0.35. Size:758K  globaltech semi
gsm2304a.pdf

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GSM2304A 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304A, N-Channel enhancement mode 30V/2.6A,RDS(ON)=82m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=108m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low Exce

 0.36. Size:963K  globaltech semi
gsm2304.pdf

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GSM2304 GSM230430V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304, N-Channel enhancement mode 30V/3.6A,RDS(ON)=78m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.8A,RDS(ON)=105m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 0.37. Size:747K  globaltech semi
gsm2304as.pdf

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GSM2304AS 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304AS, N-Channel enhancement mode 30V/2.4A,RDS(ON)=65m@VGS=10VMOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=90m@VGS=4.5Vto provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low SOT-2

 0.38. Size:754K  globaltech semi
gsm2304s.pdf

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GSM2304S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304S, N-Channel enhancement mode 30V/3.6A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.5A,RDS(ON)=85m@VGS=4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (O

 0.39. Size:344K  ncepower
nce2304.pdf

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Pb Free Producthttp://www.ncepower.com NCE2304NCE N-Channel Enhancement Mode Power MOSFET DDescription The NCE2304 uses advanced trench technology to provide Gexcellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = 30V,ID = 3.6A RDS(ON)

 0.40. Size:61K  sensitron
shd230409.pdf

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SENSITRON SHD230409SEMICONDUCTORTECHNICAL DATADATA SHEET 721, REV -HERMETIC POWER MOSFETP-CHANNELFEATURES: -100 Volt, 0.22 Ohm MOSFET Isolated and Hermetically Sealed Simple Drive RequirementsMAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGATE TO SOURCE VOLTAGE VGS - - 20VoltsID - - -14 AmpsCON

 0.41. Size:60K  sensitron
shd230452.pdf

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SENSITRON SHD230452SEMICONDUCTORTECHNICAL DATADATA SHEET 722, REV. -HERMETIC POWER MOSFETP-CHANNELFEATURES: -100 Volt, 0.065 Ohm, -20A MOSFET Fast Switching Low RDS (on) Electrically Equivalent to IRF5210MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGATE TO SOURCE VOLTAGE VGS - - 20VoltsID -

 0.42. Size:61K  sensitron
shd230405.pdf

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SHD230405SENSITRON SEMICONDUCTORTECHNICAL DATADATA SHEET 579, REV -HERMETIC POWER MOSFETN-CHANNELFEATURES: 500 Volt, 0.85, Ohm, 5.5Amp MOSFET Isolated and Hermetically Sealed Surface Mount PackageMAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGATE TO SOURCE VOLTAGE VGS - - 20VoltsID - - 5.5 Amps

 0.43. Size:251K  silicon standard
ssm2304agn.pdf

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SSM2304AGNN-CHANNEL ENHANCEMENT-MODE POWER MOSFETSimple drive requirement BV 30VDSSDLower gate charge R 117mDS(ON)Fast switching characteristics ID 2.5ASSOT-23-3GDescriptionDAdvanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.GSThe SS

 0.44. Size:143K  silicon standard
ssm2304gn.pdf

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SSM2304NN-CHANNEL ENHANCEMENT-MODE POWER MOSFETSimple drive requirement BV 25VDSSSmall package outline R 117mDDS(ON)Surface-mount package I 2.5ADSSOT-23GDescriptionPower MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching, low on-resistance and cost-effectiveness.DGSAbsolute Maximum RatingsSymbol Parameter Rati

 0.45. Size:600K  slkor
sl2304.pdf

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SL2304N-Channel MOSFETV(BR)DSS RDS(on)MAX ID60m@10V30 V 3.3A75m@4.5VFEATURE APPLICATION TrenchFET Power MOSFET Load Switch for Portable Devices DC/DC ConverterEquivalent Circuit1.GATE2.SOURCE3.DRAINMaximum ratings ( Ta=25 unless otherwise noted)Parameter Symbol Value UnitDrain-Source Voltage VDS 30VGate-Source Voltage VGS 20Continuous Drain

 0.46. Size:753K  stansontech
st2304srg.pdf

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ST2304SRG N Channel Enhancement Mode MOSFET 3.2A DESCRIPTION ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone an

 0.47. Size:897K  stansontech
st2304.pdf

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ST2304 N Channel Enhancement Mode MOSFET 3.2A DESCRIPTION ST2304 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and note

 0.48. Size:1471K  umw-ic
si2304a.pdf

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RUMWUM SI2304AN-Channel 30-V (D-S) MOSFET FeaturesSOT23 VDS (V) = 30V RDS(ON) 57m (VGS =-10V) RDS(ON) 94 m (VGS =-4.5V)1. GATE 2. SOURCE 3. DRAIN MARKINGEquivalent Circuit D G S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gate-Source Voltage VGS 20 Ta=25 3.5 Continuous Dr

 0.49. Size:2103K  anbon
as2304.pdf

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N-Channel 30V(D-S) MOSFET AS2304 SOT-23 Plastic-Encapsulate MOSFETS Dimensions In Millimeters Dimensions In InchesSymbolMin Max Min MaxA 0.900 1.150 0.035 0.045A1 0.000 0.100 0.000 0.004A2 0.900 1.050 0.035 0.041b 0.300 0.500 0.012 0.020c 0.080 0.150 0.003 0.006D 2.800 3.000 0.110 0.118E 1.200 1.400 0.047 0.055E1 2.250 2.550 0.089 0

 0.50. Size:2945K  cn szxunrui
si2304.pdf

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SOT-23 Plastic-Encapsulate MOSFETSSI2304N-Channel 30-V (D-S) MOSFETSOT-23PRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A) 31.GATE0.055 @ V 2.5GS = 10 V30302.SOURCE0.080 @ VGS = 4.5 V 2.03.DRAIN12General FEATURETrenchFET Power MOSFETEquivalent CircuitMARKINGLead free product is acquiredSurface mount packageA69TF wAPPLICATIONLoad Switch for Por

 0.51. Size:836K  cn shikues
sk2304aa.pdf

2304
2304

 0.52. Size:1269K  winsok
wst2304.pdf

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WST2304N-Ch MOSFETGeneral Description Product SummeryThe WST2304 is the highest performance trench BVDSS RDSON ID N-ch MOSFET with extreme high cell density , 20V 20m 6.3Awhich provide excellent RDSON and gate charge for most of the small power switching and load switch applications.Applications The WST2304 meet the RoHS and Green Power management in portable and

 0.53. Size:1337K  winsok
wst2304a.pdf

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WST2304AN-Ch MOSFETGeneral Description Product SummeryThe WST2304A is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent 30V 35m 5.2ARDSON and gate charge for most of the small power switching and load switch Applications applications. The WST2304A meet the RoHS and Green Product requirement with full

 0.54. Size:878K  cn vbsemi
ap2304gn.pdf

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2304

AP2304GNwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Conve

 0.55. Size:848K  cn vbsemi
st2304.pdf

2304
2304

ST2304www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G 1

 0.56. Size:542K  cn yangzhou yangjie elec
yjl2304a.pdf

2304
2304

RoHS COMPLIANT YJL2304A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 3.6A D R ( at V =10V) 39 mohm DS(ON) GS R ( at V =4.5V) 52 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High Power and current handing capability Applications PWM application Load switch Absolute M

 0.57. Size:178K  inchange semiconductor
2sc2304.pdf

2304
2304

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2304DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for color TV horizontal deflection driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 VCBO

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
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