4414 Todos los transistores

 ..1. Size:106K  sztuofeng
 4414.pdf

Shen zhen TuoFeng industrial co., LTD 4414 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4414 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON) and low gate charge. This ID = 8.5A (VGS = 10V) device is suitable for use as a load switch or in PWM RDS(ON)

 0.1. Size:137K  sanyo
 2sa1683 2sc4414.pdf

Ordering number EN3012 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1683/2SC4414 Low-Frequency General-Purpose Amplifier, Low-Frequency Power Amplifier Applications Features Package Dimensions Adoption of FBET process. unit mm High breakdown voltage VCEO>80V. 2033 [2SA1683/2SC4414] B Base C Collector E Emitter ( ) 2SA1683 SANYO SPA Specifications Absolute

 0.2. Size:119K  utc
 ut4414.pdf

UNISONIC TECHNOLOGIES CO., LTD UT4414 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT4414 is an N-channel enhancement mode FET with excellent trench technology to provide customers perfect RDS(ON) and low gate charge. The source leads are separated to allow a Kelvin SOP-8 connection to the source, which may be used to bypas

 0.3. Size:326K  silikron
 ssf4414.pdf

SSF4414 D DESCRIPTION The SSF4414 uses advanced trench technology to provide excellent RDS(ON) G and low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES V = 30V,I = 8.5A DS D R

 0.4. Size:231K  first silicon
 ftk4414.pdf

SEMICONDUCTOR FTK4414 TECHNICAL DATA D DESCRIPTION The FTK4414 uses advanced trench technology to provide excellent RDS(ON) G and low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES D D D D VDS = 30V,ID = 8.5A 8 7 6 5 RDS(ON)

 0.5. Size:356K  elm
 elm34414aa.pdf

Single N-channel MOSFET ELM34414AA-N General description Features ELM34414AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on), low gate charge and low gate Id=15A resistance. Rds(on)

 0.6. Size:205K  m-mos
 mmn4414.pdf

MMN4414 Data Sheet M-MOS Semiconductor Hong Kong Limited 30V N-Channel Enhancement-Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@5.8A = 26m RDS(ON), Vgs@4.5V, Ids@5A = 40m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SOP-08 Internal Schematic Diagram Drain Gate Source Top View N-Channel MOSFET Maximum Ratings and Thermal C