4414 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Shen zhen TuoFeng industrial co., LTD4414N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO4414 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON) and low gate charge. This ID = 8.5A (VGS = 10V)device is suitable for use as a load switch or in PWM RDS(ON)

Ordering number:EN3012PNP/NPN Epitaxial Planar Silicon Transistors2SA1683/2SC4414Low-Frequency General-Purpose Amplifier,Low-Frequency Power Amplifier ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High breakdown voltage : VCEO>80V.2033[2SA1683/2SC4414]B : BaseC : CollectorE : Emitter( ) : 2SA1683SANYO : SPASpecificationsAbsolute

UNISONIC TECHNOLOGIES CO., LTD UT4414 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT4414 is an N-channel enhancement mode FET with excellent trench technology to provide customers perfect RDS(ON) and low gate charge. The source leads are separated to allow a Kelvin SOP-8connection to the source, which may be used to bypas

SSF4414 DDESCRIPTION The SSF4414 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES V = 30V,I = 8.5A DS DR

SEMICONDUCTOR FTK4414 TECHNICAL DATADDESCRIPTIONThe FTK4414 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. SSchematic diagramGENERAL FEATURESD D D D VDS = 30V,ID = 8.5A 8 7 6 5RDS(ON)

Single N-channel MOSFETELM34414AA-NGeneral description Features ELM34414AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=15A resistance. Rds(on)

MMN4414Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@5.8A = 26mRDS(ON), Vgs@4.5V, Ids@5A = 40mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOP-08 Internal Schematic DiagramDrain Gate Source Top View N-Channel MOSFETMaximum Ratings and Thermal C