4414 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 4414
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 13.84 nC
   trⓘ - Tiempo de subida: 4.2 nS
   Cossⓘ - Capacitancia de salida: 102 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm
   Paquete / Cubierta: SOIC-8

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4414 Datasheet (PDF)

..1. Size:106K sztuofeng
4414.pdf

Shen zhen TuoFeng industrial co., LTD4414N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO4414 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON) and low gate charge. This ID = 8.5A (VGS = 10V)device is suitable for use as a load switch or in PWM RDS(ON)

0.1. Size:137K sanyo
2sa1683 2sc4414.pdf

Ordering number:EN3012PNP/NPN Epitaxial Planar Silicon Transistors2SA1683/2SC4414Low-Frequency General-Purpose Amplifier,Low-Frequency Power Amplifier ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High breakdown voltage : VCEO>80V.2033[2SA1683/2SC4414]B : BaseC : CollectorE : Emitter( ) : 2SA1683SANYO : SPASpecificationsAbsolute

0.2. Size:119K utc
ut4414.pdf

UNISONIC TECHNOLOGIES CO., LTD UT4414 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT4414 is an N-channel enhancement mode FET with excellent trench technology to provide customers perfect RDS(ON) and low gate charge. The source leads are separated to allow a Kelvin SOP-8connection to the source, which may be used to bypas

0.3. Size:326K silikron
ssf4414.pdf

SSF4414 DDESCRIPTION The SSF4414 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES V = 30V,I = 8.5A DS DR

0.4. Size:231K first silicon
ftk4414.pdf

SEMICONDUCTOR FTK4414 TECHNICAL DATADDESCRIPTIONThe FTK4414 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. SSchematic diagramGENERAL FEATURESD D D D VDS = 30V,ID = 8.5A 8 7 6 5RDS(ON)

0.5. Size:356K elm
elm34414aa.pdf

Single N-channel MOSFETELM34414AA-NGeneral description Features ELM34414AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on), low gate charge and low gate Id=15A resistance. Rds(on)

0.6. Size:205K m-mos
mmn4414.pdf

MMN4414Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@5.8A = 26mRDS(ON), Vgs@4.5V, Ids@5A = 40mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOP-08 Internal Schematic DiagramDrain Gate Source Top View N-Channel MOSFETMaximum Ratings and Thermal C

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