4800 Todos los transistores

 ..1. Size:117K  sztuofeng
 4800.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4800 N-Channel Reducded Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.020@ VGS = 10 V 9 30 30 0.033 @ VGS = 4.5 V 7 D D D D SO-8 SD 1 8 S D 2 7 G SD 3 6 G D N-Channel MOSFET 4 5 Top View Ordering Information Si4800 S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbo

 0.1. Size:247K  vishay
 si4800bdy.pdf

Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.0185 at VGS = 10 V 9 30 TrenchFET Power MOSFET 0.030 at VGS = 4.5 V 7 High-Efficient PWM Optimized 100 % UIS and Rg Tested SO-8 D S 1 8 D S D 2 7 S 3 6 D G D 4 5 G Top Vi

 0.2. Size:96K  vishay
 si4800.pdf

SI4800 N-channel TrenchMOS logic level FET M3D315 Rev. 02 17 February 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Low gate charge Surface mounted package Low on-state resistance Fast switching. 1.3 Applications Portable appliances Notebook computers

 0.3. Size:244K  vishay
 si4800bd.pdf

Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.0185 at VGS = 10 V 9 30 TrenchFET Power MOSFET 0.030 at VGS = 4.5 V 7 High-Efficient PWM Optimized 100 % UIS and Rg Tested SO-8 D S 1 8 D S D 2 7 S 3 6 D G D 4 5 G Top Vi

 0.4. Size:50K  vishay
 si4800dy.pdf

Si4800DY Vishay Siliconix N-Channel Reducded Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.0185 @ VGS = 10 V 9 30 30 0.033 @ VGS = 4.5 V 7 D D D D SO-8 SD 1 8 S D 2 7 G SD 3 6 G D N-Channel MOSFET 4 5 Top View Ordering Information Si4800DY Si4800DY-T1 (with Tape and Reel) S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Paramet

 0.5. Size:161K  diodes
 dmg4800lfg.pdf

 0.6. Size:217K  diodes
 dmn4800lssl.pdf

DMN4800LSSL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefitss 14m @ VGS = 10V ID max V(BR)DSS RDS(on) Low Input Capacitance TA = +25 C Fast Switching Speed Low Input/Output Leakage 14m @ VGS = 10V 8.0A 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 20m @ VGS = 4.5V 6.7A Halogen and Antimony Free. Gr

 0.7. Size:237K  diodes
 dmg4800lk3.pdf

DMG4800LK3 N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case TO252-3L Case Material Molded Plastic, Green Molding Compound. Low Input Capacitance UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity Level 1 per J-STD-020

 0.8. Size:143K  diodes
 dmg4800lsd.pdf

DMG4800LSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SO-8 Low Input Capacitance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity Level 1 per J-STD-020D

 0.9. Size:160K  diodes
 dmn4800lss.pdf

DMN4800LSS N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOP-8L 14m @ VGS = 10V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 20m @ VGS = 4.5V Moisture Sensitivity Level 1 per J-STD-020D Lo

 0.10. Size:326K  diodes
 dmn4800lssq.pdf

DMN4800LSSQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID max Low Input Capacitance BVDSS RDS(ON) max TA = +25 C Fast Switching Speed 14m @ VGS = 10V 8.6A Low Input/Output Leakage 30V 20m @ VGS = 4.5V 7.1A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Devi

 0.11. Size:136K  onsemi
 ntms4800n.pdf

NTMS4800N Power MOSFET 30 V, 8 A, N-Channel, SOIC-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board Space V(BR)DSS RDS(ON) MAX ID MAX This is a Pb-Free Device 20 mW @ 10 V Applications 30 V 8 A 27 mW @ 4.5 V

 0.12. Size:132K  onsemi
 ntms4800nr2g.pdf

NTMS4800N Power MOSFET 30 V, 8 A, N-Channel, SOIC-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board Space V(BR)DSS RDS(ON) MAX ID MAX This is a Pb-Free Device 20 mW @ 10 V Applications 30 V 8 A 27 mW @ 4.5 V

 0.13. Size:111K  onsemi
 nttfs4800n-d.pdf

NTTFS4800N Power MOSFET 30 V, 32 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX Applications 20 mW @ 10 V DC-DC Converters

 0.14. Size:278K  utc
 ut4800.pdf

UNISONIC TECHNOLOGIES CO., LTD UT4800 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. SYMBOL Drain Gate Source ORDERING INFORMATION Ordering Number Package Pack

 0.15. Size:1785K  jiangsu
 cjq4800.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET CJQ4800 SOP8 ID V(BR)DSS RDS(on)TYP 16m @10V 30V 6.9A 19m @4.5 V DESCRIPTION The CJQ4800 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. MARKING Equivale

 0.16. Size:360K  aosemi
 ao4800b.pdf

AO4800B 30V Dual N-Channel MOSFET General Description Product Summary VDS 30V The AO4800B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two ID (at VGS=10V) 6.9A MOSFETs make a compact and efficient switch and RDS(ON) (at VGS=10V)

 0.17. Size:360K  aosemi
 ao4800.pdf

AO4800 30V Dual N-Channel MOSFET General Description Product Summary VDS 30V The AO4800 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs ID (at VGS=10V) 6.9A make a compact and efficient switch and synchronous RDS(ON) (at VGS=10V)

 0.18. Size:80K  ape
 ap4800gm.pdf

AP4800GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 25V D D Fast Switching D RDS(ON) 18m D Simple Drive Requirement ID 9A G S S SO-8 S Description D D The Advanced Power MOSFETs from APEC provide the designer with the best combination of

 0.19. Size:94K  ape
 ap4800dgm-hf.pdf

AP4800DGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D D Simple Drive Requirement RDS(ON) 18m D Fast Switching Characteristic ID 9A G S RoHS Compliant & Halogen-Free S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fas

 0.20. Size:95K  ape
 ap4800gyt-hf.pdf

AP4800GYT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Size & Lower Profile RDS(ON) 13m RoHS Compliant ID 13A G S D D Description D Advanced Power MOSFETs from APEC provide the D designer with the best combination of fast switching, ruggedized device design, low on-resis

 0.21. Size:223K  ape
 ap4800gem.pdf

AP4800GEM Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D D Fast Switching Characteristic RDS(ON) 18m D Low On-resistance ID 9.2A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP4800 series are from Advanced Power innovated design and G silicon process technolog

 0.22. Size:93K  ape
 ap4800agm.pdf

AP4800AGM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D Low On-resistance RDS(ON) 18m D D Fast Switching Characteristic ID 9.6A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device de

 0.23. Size:93K  ape
 ap4800agm-hf.pdf

AP4800AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D Low On-resistance RDS(ON) 18m D D Fast Switching Characteristic ID 9.6A G RoHS Compliant S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,

 0.24. Size:57K  ape
 ap4800cgm-hf.pdf

AP4800CGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D D Simple Drive Requirement RDS(ON) 14m D Fast Switching Characteristic ID 10.4A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of

 0.25. Size:615K  ape
 ap4800n2.pdf

AP4800N2 Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Fast Switching Characteristic G RDS(ON) 18m Small Size & Lower Profile ID 9A Halogen Free & RoHS Compliant Product S Top view D D D S Description D S AP4800 series are from Advanced Power innovated design and silicon proc

 0.26. Size:94K  ape
 ap4800bgm-hf.pdf

AP4800BGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D Low On-resistance RDS(ON) 18m D D Fast Switching Characteristic ID 9.6A G RoHS Compliant S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,

 0.27. Size:323K  cystek
 mtn4800v8.pdf

Spec. No. C737V8 Issued Date 2011.12.30 CYStech Electronics Corp. Revised Date 2013.11.13 Page No. 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTN4800V8 ID 18A VGS=10V, ID=10A 14m RDSON(TYP) VGS=4.5V, ID=8A 22m Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline D

 0.28. Size:176K  anpec
 apm4800.pdf

APM4800 N-Channel Enhancement Mode MOSFET Features Pin Description SO-8 30V/8A , RDS(ON)=15m (typ.) @ VGS=10V RDS(ON)=22m (typ.) @ VGS=4.5V S 1 8 D Super High Dense Cell Design for Extremely S 2 7 D Low RDS(ON) S 3 6 D Reliable and Rugged G 45 D SO-8 Package Top View D Applications Power Manageme

 0.29. Size:113K  samhop
 stm4800s.pdf

S TM4800S S amHop Microelectronics C orp. J un.07 2006 N-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y FEATUR ES S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 20 @ VGS = 10V 30V 8A Surface Mount Package. 28 @ VGS =4.5V SO-8 1 ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) Limit Unit P

 0.30. Size:1311K  blue-rocket-elect
 brcs4800sc.pdf

BRCS4800SC Rev. D Oct.-2018 DATA SHEET / Descriptions SOP-8 N MOS N-Channel Enhancement Mode Field Effect Transistor in a SOP-8 Plastic Package. / Features VDS(V)=30V ID=6.9A RDS(ON)

 0.31. Size:1289K  kexin
 ao4800.pdf

SMD Type MOSFET Dual N-Channel MOSFET AO4800 (KO4800) SOP-8 Unit mm Features VDS (V) = 30V ID = 6.9 A (VGS = 10V) 1.50 0.15 RDS(ON) 27m (VGS = 10V) RDS(ON) 32m (VGS = 4.5V) 1 S2 5 D1 RDS(ON) 50m (VGS = 2.5V) 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D2 D1 G2 G1 S1 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

 0.32. Size:64K  chenmko
 chm4800ajgp.pdf

CHENMKO ENTERPRISE CO.,LTD CHM4800AJGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 9 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * High power

 0.33. Size:392K  elm
 elm14800aa.pdf

Dual N-channel MOSFET ELM14800AA-N General description Features ELM14800AA-N uses advanced trench technology to Vds=30V provide excellent Rds(on) and low gate charge. Id=6.9A (Vgs=10V) Rds(on)

 0.34. Size:283K  silicon standard
 ssm4800agm.pdf

SSM4800AGM N-Channel Enhancement Mode Power Mosfet PRODUCT SUMMARY D Simple Drive Requirement BVDSS 30V D D Low On-resistance RDS(ON) 18m D Fast Switching Characteristic ID 9.4A G RoHS Compliant S S SO-8 S DESCRIPTION D The Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, G ruggedized device design, low on

 0.35. Size:2550K  winsok
 wsp4800.pdf

WSP4800 Dual N-Channel MOSFET General Description Product Summery The WSP4800 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and 40V 32m 6.0A gate chargens for most of the synchronous buck converter applications . Applicatio The WSP4800 meet the RoHS and Power Management in Note book. Green Produ

 0.36. Size:28499K  cn sps
 sm4800.pdf

SM4800 Dual N-Channel Enhancement Mode Field Effect Transistor P-Channel Enhancement-Mode MOSFET Description The SM4800 uses advanced trench technology to 1 8 S2 D2 provide excellent RDS(ON) and low gate charge. The 2 7 G2 D2 two MOSFETs make a compact and efficient switch 3 6 S1 D1 and synchronous rectifier combination for use in 4 5 G1 D1 buck converters. SOIC-8 General F

 0.37. Size:852K  cn vbsemi
 ao4800.pdf

AO4800 www.VBsemi.tw Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.022 at VGS = 10 V TrenchFET Power MOSFET 6.8 30 15 nC 100 % UIS Tested 0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Set Top Box L

 0.38. Size:1322K  cn vbsemi
 vbza4800.pdf

VBZA4800 www.VBsemi.com N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.09 at VGS = 10 V 14 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 9 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch SO-

 0.39. Size:303K  cn vbsemi
 mi4800.pdf

MI4800 www.VBsemi.com Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.022 at VGS = 10 V TrenchFET Power MOSFET 6.8 30 15 nC 100 % UIS Tested 0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Set Top Box

 0.40. Size:890K  cn vbsemi
 elm14800aa.pdf

 0.41. Size:266K  inchange semiconductor
 dmg4800lk3.pdf

isc N-Channel MOSFET Transistor DMG4800LK3 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 17m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp