Shenzhen Tuofeng Semiconductor Technology Co., Ltd4800N-Channel Reducded Qg, Fast Switching MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.020@ VGS = 10 V 930300.033 @ VGS = 4.5 V 7D D D DSO-8SD1 8S D2 7GSD3 6G D N-Channel MOSFET4 5Top ViewOrdering Information: Si4800S S SABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbo

Si4800BDYVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.0185 at VGS = 10 V 930 TrenchFET Power MOSFET0.030 at VGS = 4.5 V 7 High-Efficient PWM Optimized 100 % UIS and Rg TestedSO-8DS1 8 DS D2 7S3 6 DG D4 5GTop Vi

SI4800N-channel TrenchMOS logic level FETM3D315Rev. 02 17 February 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features Low gate charge Surface mounted package Low on-state resistance Fast switching.1.3 Applications Portable appliances Notebook computers

Si4800BDYVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.0185 at VGS = 10 V 930 TrenchFET Power MOSFET0.030 at VGS = 4.5 V 7 High-Efficient PWM Optimized 100 % UIS and Rg TestedSO-8DS1 8 DS D2 7S3 6 DG D4 5GTop Vi

Si4800DYVishay SiliconixN-Channel Reducded Qg, Fast Switching MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.0185 @ VGS = 10 V 930300.033 @ VGS = 4.5 V 7D D D DSO-8SD1 8S D2 7GSD3 6G D N-Channel MOSFET4 5Top ViewOrdering Information: Si4800DYSi4800DY-T1 (with Tape and Reel)S S SABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Paramet

DMG4800LFGN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: DFN3030-8 Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020

DMN4800LSSLN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefitss 14m @ VGS = 10V ID max V(BR)DSS RDS(on) Low Input Capacitance TA = +25C Fast Switching Speed Low Input/Output Leakage 14m @ VGS = 10V 8.0A 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 20m @ VGS = 4.5V 6.7A Halogen and Antimony Free. Gr

DMG4800LK3 N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: TO252-3L Case Material: Molded Plastic, Green Molding Compound. Low Input Capacitance UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020

DMG4800LSDDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SO-8 Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020D

DMN4800LSSN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case: SOP-8L 14m @ VGS = 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 20m @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020D Lo

DMN4800LSSQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID max Low Input Capacitance BVDSS RDS(ON) max TA = +25C Fast Switching Speed 14m @ VGS = 10V 8.6A Low Input/Output Leakage 30V 20m @ VGS = 4.5V 7.1A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Devi

NTMS4800NPower MOSFET30 V, 8 A, N-Channel, SOIC-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(ON) MAX ID MAX This is a Pb-Free Device20 mW @ 10 VApplications30 V 8 A27 mW @ 4.5 V

NTMS4800NPower MOSFET30 V, 8 A, N-Channel, SOIC-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(ON) MAX ID MAX This is a Pb-Free Device20 mW @ 10 VApplications30 V 8 A27 mW @ 4.5 V

NTTFS4800NPower MOSFET30 V, 32 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) MAX ID MAXApplications20 mW @ 10 V DC-DC Converters

UNISONIC TECHNOLOGIES CO., LTD UT4800 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. SYMBOL DrainGateSource ORDERING INFORMATION Ordering Number Package Pack

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET CJQ4800SOP8 ID V(BR)DSS RDS(on)TYP16m@10V30V 6.9A19m@4.5VDESCRIPTION The CJQ4800 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. MARKING: Equivale

AO4800B30V Dual N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO4800B uses advanced trench technology toprovide excellent RDS(ON) and low gate charge. The two ID (at VGS=10V) 6.9AMOSFETs make a compact and efficient switch and RDS(ON) (at VGS=10V)

AO480030V Dual N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO4800 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. The two MOSFETs ID (at VGS=10V) 6.9Amake a compact and efficient switch and synchronous RDS(ON) (at VGS=10V)

AP4800GMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow On-Resistance BVDSS 25V DDFast Switching D RDS(ON) 18m DSimple Drive Requirement ID 9A GSSSO-8SDescriptionDDThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of

AP4800DGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VDDD Simple Drive Requirement RDS(ON) 18mD Fast Switching Characteristic ID 9AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fas

AP4800GYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 13m RoHS Compliant ID 13AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide theDdesigner with the best combination of fast switching,ruggedized device design, low on-resis

AP4800GEMHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDDD Fast Switching Characteristic RDS(ON) 18mD Low On-resistance ID 9.2AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAP4800 series are from Advanced Power innovated design andGsilicon process technolog

AP4800AGMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDD Low On-resistance RDS(ON) 18mDD Fast Switching Characteristic ID 9.6AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device de

AP4800AGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDD Low On-resistance RDS(ON) 18mDD Fast Switching Characteristic ID 9.6AG RoHS Compliant SSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,

AP4800CGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VDDD Simple Drive Requirement RDS(ON) 14mD Fast Switching Characteristic ID 10.4AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of

AP4800N2Halogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Fast Switching Characteristic G RDS(ON) 18m Small Size & Lower Profile ID 9A Halogen Free & RoHS Compliant ProductSTop viewDD D SDescriptionDSAP4800 series are from Advanced Power innovated design andsilicon proc

AP4800BGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDD Low On-resistance RDS(ON) 18mDD Fast Switching Characteristic ID 9.6AG RoHS Compliant SSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,

Spec. No. : C737V8 Issued Date : 2011.12.30 CYStech Electronics Corp.Revised Date : 2013.11.13 Page No. : 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTN4800V8 ID 18AVGS=10V, ID=10A 14m RDSON(TYP) VGS=4.5V, ID=8A 22m Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline D

APM4800N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSO-8 30V/8A , RDS(ON)=15m(typ.) @ VGS=10VRDS(ON)=22m(typ.) @ VGS=4.5V S 1 8 D Super High Dense Cell Design for ExtremelyS 2 7 DLow RDS(ON)S 3 6 D Reliable and RuggedG 45 D SO-8 PackageTop ViewDApplications Power Manageme

S TM4800SS amHop Microelectronics C orp.J un.07 2006N-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y FEATUR ESS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.20 @ VGS = 10V30V 8ASurface Mount Package.28 @ VGS =4.5VSO-81ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)Limit UnitP

SMD Type MOSFETDual N-Channel MOSFETAO4800 (KO4800)SOP-8 Unit:mm Features VDS (V) = 30V ID = 6.9 A (VGS = 10V)1.50 0.15 RDS(ON) 27m (VGS = 10V) RDS(ON) 32m (VGS = 4.5V)1 S2 5 D1 RDS(ON) 50m (VGS = 2.5V)6 D12 G27 D23 S18 D24 G1D2D1G2G1S1 S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

CHENMKO ENTERPRISE CO.,LTDCHM4800AJGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 9 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High power

Dual N-channel MOSFETELM14800AA-NGeneral description Features ELM14800AA-N uses advanced trench technology to Vds=30Vprovide excellent Rds(on) and low gate charge. Id=6.9A (Vgs=10V) Rds(on)

SSM4800AGM N-Channel Enhancement ModePower MosfetPRODUCT SUMMARY DSimple Drive RequirementBVDSS 30VDDLow On-resistance RDS(ON) 18mDFast Switching CharacteristicID 9.4AGRoHS Compliant SSSO-8SDESCRIPTION DThe Advanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,Gruggedized device design, low on

WSP4800Dual N-Channel MOSFETGeneral Description Product SummeryThe WSP4800 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and 40V 32m 6.0A gate chargens for most of the synchronous buck converter applications . Applicatio The WSP4800 meet the RoHS and Power Management in Note book.Green Produ

SM4800Dual N-Channel Enhancement Mode Field Effect TransistorP-Channel Enhancement-Mode MOSFETDescription The SM4800 uses advanced trench technology to 1 8S2 D2provide excellent RDS(ON) and low gate charge. The 2 7G2 D2two MOSFETs make a compact and efficient switch 3 6S1 D1and synchronous rectifier combination for use in 4 5G1 D1buck converters.SOIC-8General F

AO4800www.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box L

VBZA4800www.VBsemi.comN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.09 at VGS = 10 V 1420 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 9Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO-

MI4800www.VBsemi.comDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box

ELM14800AAwww.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box

isc N-Channel MOSFET Transistor DMG4800LK3FEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 17m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp