9926 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

9926 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 9926

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9 nS

Cossⓘ - Capacitancia de salida: 140 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm

Encapsulados: SOP-8

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9926 datasheet

..1. Size:1014K gfd
9926.pdf pdf_icon

9926 Description The 9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =6A Schematic diagram RDS(ON)

0.1. Size:116K fairchild semi
fds9926a.pdf pdf_icon

July 2003 FDS9926A Dual N-Channel 2.5V Specified PowerTrench MOSFET Features General Description These N-Channel 2.5V specified MOSFETs use 6.5 A, 20 V. RDS(ON) = 30 m @ VGS = 4.5 V Fairchild Semiconductor s advanced PowerTrench RDS(ON) = 43 m @ VGS = 2.5 V. process. It has been optimized for power management applications with a wide range of gate drive voltage Optimized

0.2. Size:250K vishay
si9926cd.pdf pdf_icon

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si9926bdy.pdf pdf_icon

0.4. Size:242K vishay
si9926bd.pdf pdf_icon

0.5. Size:252K vishay
si9926cdy.pdf pdf_icon

0.6. Size:46K vishay
si9926ady.pdf pdf_icon

0.7. Size:161K diodes
dmg9926usd.pdf pdf_icon

DMG9926USD DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case SOP-8L Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 24m @ VGS = 4.5V Moisture Sensitivity Level 1 per J-STD-020D 29m @ VGS = 2.5V Terminals Conn

0.8. Size:135K diodes
dmg9926udm.pdf pdf_icon

DMG9926UDM DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low Gate Charge Case SOT-26 Low RDS(ON) Case Material - Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 28m @VGS = 4.5V Moisture Sensitivity Level 1 per J-STD-020D 32m @

0.9. Size:203K utc
ud9926.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD UD9926 Power MOSFET DUAL N-CHANNEL ENHANCEMENT MODE SOP-8 FEATURES * 20V/6A * Low RDS(ON) * Reliable and Rugged SYMBOL TSSOP-8 Lead-free UD9926L Halogen-free UD9926G ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Plating Halogen Free 1 2 3 4 5 6 7 8 UD9926-S08-R UD9926L-S08-R UD9926G-S08-R

0.10. Size:382K taiwansemi
tsm9926dcs.pdf pdf_icon

TSM9926D 20V Dual N-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition 1. Source 1 8. Drain 1 VDS (V) RDS(on)(m ) ID (A) 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 30 @ VGS = 4.5V 6.0 4. Gate 2 5. Drain 2 20 40 @ VGS = 2.5V 5.2 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application

0.11. Size:3643K jiangsu
cjq9926.pdf pdf_icon

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD CJQ9926 Dual N-Channel MOSFET SOP8 ID V(BR)DSS RDS(on)MAX 40m @2.5V 20V 4.8A 30m @ 4.5 V FEATURE Advanced trench process technology High density cell design for ultra low on-resistance High power and current handing capability Ideal for Liion battery pack applications MARK

0.12. Size:2323K htsemi
pt9926.pdf pdf_icon

PT9926 20V Dual N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@2.5V, Ids@5.2A

0.13. Size:409K cet
cem9926a.pdf pdf_icon

CEM9926A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6A, RDS(ON) = 27m @VGS = 4.5V. RDS(ON) = 40m @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D1 D1 D2 D2 Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unl

0.14. Size:42K hsmc
h9926s.pdf pdf_icon

Spec. No. MOS200508 HI-SINCERITY Issued Date 2005.08.01 Revised Date 2005.10.06 MICROELECTRONICS CORP. Page No. 1/4 8 76 H9926S / H9926CS 5 8-Lead Plastic SO-8 1 Package Code S Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) 2 3 4 H9926S Symbol & Pin Assignment Description Pin 1 Source 2 5 4 Pin 2 Gate 2 6 3 This N-Channel 2.5V specified MOSFET is a rugge

0.15. Size:42K hsmc
h9926ts.pdf pdf_icon

Spec. No. MOS200513 HI-SINCERITY Issued Date 2005.10.01 Revised Date 2005.10.06 MICROELECTRONICS CORP. Page No. 1/4 H9926TS / H9926CTS 8-Lead Plastic TSSOP-8L Dual N-Channel Enhancement-Mode MOSFET (20V, 6A) Package Code TS H9926TS Symbol & Pin Assignment Description 8 7 6 5 Pin 1 Drain 1 Q2 Pin 2 / 3 Source 1 This N-Channel 2.5V specified MOSFET is a rugged gate versi

0.16. Size:1145K aosemi
ao9926c.pdf pdf_icon

AO9926C 20V Dual N-Channel MOSFET General Description Product Summary VDS The AO9926C uses advanced trench technology to 20V 7.6A provide excellent RDS(ON), low gate charge and operation ID (at VGS=10V) with gate voltages as low as 1.8V while retaining a 12V

0.17. Size:246K aosemi
ao9926b.pdf pdf_icon

AO9926B 20V Dual N-Channel MOSFET General Description Product Summary VDS 20V The AO9926B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=10V) 7.6A with gate voltages as low as 1.8V while retaining a 12V RDS(ON) (at VGS=10V)

0.18. Size:60K ape
ap9926gm-hf.pdf pdf_icon

AP9926GM-HF Halogen-Free Product Advanced Power Dual N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low Gate Charge BVDSS 20V D2 D2 D1 Capable of 2.5V Gate Drive RDS(ON) 30m D1 Surface Mount Package ID 6A G2 S2 RoHS Compliant & Halogen-Free G1 S1 SO-8 Description D2 D1 AP9926 series are from Advanced Power innovated design and silicon process te

0.19. Size:80K ape
ap9926go.pdf pdf_icon

AP9926GO Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET G2 Low on-resistance BVDSS 20V S2 S2 D2 Capable of 2.5V gate drive RDS(ON) 28m G1 S1 Low drive current S1 ID 4.6A TSSOP-8 D1 Surface mount package Description D2 The Advanced Power MOSFETs fr

0.20. Size:60K ape
ap9926geo-hf.pdf pdf_icon

AP9926GEO-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET G2 Low On-resistance BVDSS 20V S2 S2 D2 Capable of 2.5V Gate Drive RDS(ON) 28m G1 S1 Low Drive Current S1 ID 4.6A TSSOP-8 D1 Surface Mount Package RoHS Compliant & Halogen-Free Description D1 D2 Advanced Power MOSFETs from APEC provide the G1

0.21. Size:167K ape
ap9926gm.pdf pdf_icon

AP9926GM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low Gate Charge BVDSS 20V D2 D2 D1 Capable of 2.5V Gate Drive RDS(ON) 30m D1 Surface Mount Package ID 6A G2 S2 RoHS Compliant & Halogen-Free G1 S1 SO-8 Description D2 D1 AP9926 series ar

0.22. Size:87K ape
ap9926gem.pdf pdf_icon

AP9926GEM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low on-resistance BVDSS 20V D2 D2 Capable of 2.5V gate drive D1 RDS(ON) 30m D1 Low drive current ID 6A G2 S2 Surface mount package G1 SO-8 S1 Description The Advanced Power MOSFETs from APEC provide the D1 D2 designer with the best combination of fast sw

0.23. Size:144K ape
ap9926geo.pdf pdf_icon

0.24. Size:327K analog power
am9926n.pdf pdf_icon

Analog Power AM9926N N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 30 @ VGS = 4.5V 6.9 Low thermal impedance 20 40 @ VGS = 2.5V 6.0 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

0.25. Size:998K shenzhen
9926b.pdf pdf_icon

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SMD Type MOSFET Dual N-Channel MOSFET 9926B Features 6.5A, 20 V . rDS(on) = 0. 022 @VGS =4.5 V 5.5A , 20 V rDS(on) = 0. 035 @VGS =2.5 V. Absolute Maximum Ratings Ta = 25 Parameter Symbol 10 secs Steady Sate Unit Drai n-S ourc e V ol t age V DS 20 V Gat e-S ourc e V ol t age V GS 10 V 6.5 A Continuous Drain Current Ta=25 ID Pulsed

0.26. Size:672K shenzhen
9926a.pdf pdf_icon

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SMD Type MOSFET Dual N-Channel MOSFET 9926A Features 6A , 20 V . rDS(on) = 0. 030 @VGS =4.5 V 5.2A , 20 V rDS(on) = 0. 040 @VGS =2.5 V. Absolute Maximum Ratings Ta = 25 Parameter Symbol 10 secs Steady Sate Unit Drai n-S ourc e V ol t age V DS 20 V Gat e-S ourc e V ol t age V GS 10 V Continuous Drain Current Ta=25 6 A ID Pulsed Dra

0.27. Size:422K cystek
mtdn9926q8.pdf pdf_icon

Spec. No. C747Q8 Issued Date 2009.11.09 CYStech Electronics Corp. Revised Date 2011.03.21 Page No. 1/7 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 20V MTDN9926Q8 ID 6A 28m RDSON(MAX) Description The MTDN9926Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8

0.28. Size:165K anpec
apm9926c.pdf pdf_icon

APM9926/C N-Channel Enhancement Mode MOSFET Features Applications 20V/6A , RDS(ON)=28m (typ.) @ VGS=4.5V Power Management in Notebook Computer , RDS(ON)=38m (typ.) @ VGS=2.5V Portable Equipment and Battery Powered Systems. Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 and TSSOP-8 Packages

0.29. Size:203K anpec
apm9926ak.pdf pdf_icon

APM9926AK Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A, RDS(ON) =28m (typ.) @ VGS =4.5V RDS(ON) =34m (typ.) @ VGS =2.5V Super High Dense Cell Design Reliable and Rugged Top View of SOP - 8 Lead Free Available (RoHS Compliant) (8) (7) (6) (5) D1 D1 D2 D2 Applications Power Management in Portable Equipment and Battery Powered Systems (2) (4) G1

0.30. Size:212K anpec
apm9926ccg.pdf pdf_icon

APM9926CCG Dual N-Channel Enhancement Mode MOSFET Features Pin Description 8 20V/5A , RDS(ON)=25m (typ.) @ VGS=4.5V 7 6 5 RDS(ON)=34m (typ.) @ VGS=2.5V 1 2 Super High Dense Cell Design 3 4 Reliable and Rugged Lead Free Available (RoHS Compliant) (8) (7) (6) (5) D1 D1 D2 D2 Applications Power Management in Notebook Computer, Por- table Equipment and Battery Powe

0.31. Size:204K anpec
apm9926k.pdf pdf_icon

APM9926K Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A, RDS(ON) =28m (typ.) @ VGS = 4.5V RDS(ON) =38m (typ.) @ VGS = 2.5V Super High Dense Cell Design Reliable and Rugged Top View of SOP - 8 Lead Free Available (RoHS Compliant) (8) (7) (6) (5) D1 D1 D2 D2 Applications (2) (4) Power Management in Notebook Computer, G1 G2 Portable Equipment and

0.32. Size:180K anpec
apm9926.pdf pdf_icon

0.33. Size:1666K goford
9926b.pdf pdf_icon

GOFORD 9926B Description The 9926B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @2.5V (Typ) 20V 16m 20 m 6 A B High density cell design for ultra low Rdson Fully characterized avalanche

0.34. Size:670K samhop
stm9926.pdf pdf_icon

S T M9926 S amHop Microelectronics C orp. J an. 10 2008 ver1.0 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y F E AT UR E S S uper high dense cell design for low R DS (ON). V DS S ID R DS (ON) ( m W ) Max R ugged and reliable. 28 @ V G S = 4.0V 20V 6.5A S urface Mount Package. 38 @ V G S = 2.5V E S D P rotected. D1 D1 D2 D2 8 7 6 5 S O-8 1 1 2

0.35. Size:365K silikron
ssf9926.pdf pdf_icon

SSF9926 DESCRIPTION The SSF9926 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram GENERAL FEATURES VDS = 20V,ID =6A R

0.36. Size:898K blue-rocket-elect
brcs9926sc.pdf pdf_icon

BRCS9926SC Rev.I Mar.-2019 DATA SHEET / Descriptions SOP-8 N Power Trench MOS Dual N-Channel Power Trench MOSFET in a SOP-8 Plastic Package. / Features 10 V MOSFET GSS Optimized for use in battery protecti

0.37. Size:323K lrc
ldn9926et1g.pdf pdf_icon

LESHAN RADIO COMPANY, LTD. LDN9926ET1G Dual N Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6A, RDS(ON) = 29m @VGS = 4.5V. . RDS(ON) = 42m @VGS = 2.5V. N) Super high dense cell design for extremely low RDS(O High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 D1 D2 D2 8 7 6 5 7 6 5 8 9926 4 1 2 3 1 2 3 4

0.38. Size:264K sino
sm9926dsk.pdf pdf_icon

SM9926DSK Dual N-Channel Enhancement Mode MOSFET Features Pin Description D1 D1 20V/8A, D2 D2 RDS(ON) =20m (max.) @ VGS = 4.5V RDS(ON) =29m (max.) @ VGS = 2.5V S1 G1 Reliable and Rugged S2 G2 Lead Free and Green Devices Available (RoHS Compliant) Top View of SOP 8 (8) (7) (6) (5) D1 D1 D2 D2 Applications (2) (4) G1 G2 Power Management in Notebook Computer, Portabl

0.39. Size:2960K first silicon
ftk9926.pdf pdf_icon

SEMICONDUCTOR FTK9926 TECHNICAL DATA FEATURE Advanced trench process technology High density cell design for ultra low on-resistance N-channel N-channel High power and current handing capability Schematic diagram D 2 D 2 D 1 D 1 Ideal for Liion battery pack applications 6 5 8 7 Q9926 1 2 4 3 S 2 G 2 G 1 S 1 Marking and pin Assignment SOP-8 top view PACKAGE MARKING AN

0.40. Size:1912K kexin
si9926dy-hf-s.pdf pdf_icon

SMD Type MOSFET Dual N-Channel MOSFET SI9926DY-HF (KI9926DY-HF) SOP-8 Features VDS (V) = 20V ID = 6.5 A (VGS = 4.5V) RDS(ON) 30m (VGS = 4.5V) 1.50 0.15 RDS(ON) 43m (VGS = 2.5V) Low gate charge 1 Source 5 Drain Pb-Free Package May be Available. The G-Suffix Denotes a 6 Drain 2 Gate 7 Drain 3 Source Pb-Free Lead Finish 8 Drain 4 Gat

0.41. Size:490K kexin
si9926dy.pdf pdf_icon

SMD Type MOSFET SMD Type Dual N-Channel MOSFET SI9926DY (KI9926DY) TSSOP-8 Unit mm Features RDS(on) 0.032 @ VGS = 4.5 V 6.45+0.1 -0.1 4.45+0.1 -0.1 RDS(on) 0.045 @ VGS = 2.5 V. 1 Drain1 5 Gate2 2 Source 6 Source2 1 D1 D2 1 3 Source 7 Source2 S1 S2 4 Gate1 8 Drain2 S1 S2 G1 G2 Absolute Maximum Ratings Ta = 25 Parameter

0.42. Size:1256K kexin
si9926dy-s.pdf pdf_icon

SMD Type MOSFET Dual N-Channel MOSFET SI9926DY (KI9926DY) SOP-8 Features VDS (V) = 20V ID = 6.5 A (VGS = 4.5V) RDS(ON) 30m (VGS = 4.5V) 1.50 0.15 RDS(ON) 43m (VGS = 2.5V) Low gate charge 1 Source 5 Drain 6 Drain 2 Gate 7 Drain 3 Source 8 Drain 4 Gate 5 4 Q1 6 3 7 2 Q2 8 1 Absolute Maximum Ratings Ta = 25 Parameter Symbol R

0.43. Size:473K kexin
si9926bdy.pdf pdf_icon

SMD Type MOSFET SMD Type Dual N-Channel MOSFET SI9926BDY (KI9926BDY) Features SOP-8 RDS(on) = 0.027 @ VGS = 4.5 V RDS(on) = 0.036 @ VGS = 2.5 V. 1.50 0.15 D D 1 2 S D 1 1 8 1 G D 1 2 7 1 S D G G 2 3 6 2 1 2 G D 2 4 5 2 S S 1 2 Absolute Maximum Ratings Ta = 25 Parameter Symbol 10 sec Steady State Unit Drain-Source Voltage VDS 20 V Gate-Source Volta

0.44. Size:458K kexin
ki9926a.pdf pdf_icon

SMD Type MOSFET SMD Type Dual N-Channel MOSFET KI9926A SOP-8 Features RDS(on) = 0.030 @ VGS = 4.5 V RDS(on) = 0.040 @ VGS = 2.5 V. 1.50 0.15 D1 D2 S1 1 D1 8 G1 2 D1 7 G1 G2 S2 3 D2 6 G2 4 D2 5 S1 S2 Top View Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 12 V Continuous Drain

0.45. Size:641K ait semi
am9926.pdf pdf_icon

AiT Semiconductor Inc. AM9926 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM9926 uses advanced trench technology and V =20V, I =6A DS D design to provide excellent R with low gate R

0.46. Size:589K belling
blm9926.pdf pdf_icon

Pb Free Product BLM9926 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The BLM9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =20V,ID =6A Schematic diagram RDS(ON)

0.47. Size:94K chenmko
chm9926jgp.pdf pdf_icon

CHENMKO ENTERPRISE CO.,LTD CHM9926JGP SURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 6 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * High density cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * Rugged and

0.48. Size:93K chenmko
chm9926pagp.pdf pdf_icon

CHENMKO ENTERPRISE CO.,LTD CHM9926PAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 26 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High power

0.49. Size:94K chenmko
chm9926ajgp.pdf pdf_icon

CHENMKO ENTERPRISE CO.,LTD CHM9926AJGP SURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 6 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * High density cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * Rugged and

0.50. Size:201K m-mos
mmn9926e.pdf pdf_icon

MMN9926E Data Sheet M-MOS Semiconductor Hong Kong Limited 20V Dual N-Channel Enhancement-Mode MOSFET VDS= 20V ID= 8A ESD Protected Gate 2000V RDS(ON), Vgs@4.5V, Ids@8A = 21m RDS(ON), Vgs@2.5V, Ids@7A = 25m RDS(ON), Vgs@1.8V, Ids@6A = 33m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for Li ion battery pac

0.51. Size:205K m-mos
mmn9926.pdf pdf_icon

MMN9926 Data Sheet M-MOS Semiconductor Hong Kong Limited 20V N-Channel Enhancement-Mode MOSFET VDS= 20V RDS(ON), Vgs@4.5V, Ids@6A = 30m RDS(ON), Vgs@2.5V, Ids@5.2A = 40m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications TSSOP-08 SO-8 Internal Sche

0.52. Size:203K m-mos
mmn9926bdy.pdf pdf_icon

MMN9926BDY Preliminary Data Sheet M-MOS Semiconductor Hong Kong Limited 20V N-Channel Enhancement-Mode MOSFET VDS= 20V RDS(ON), Vgs@4.5V, Ids@8.2A = 20m RDS(ON), Vgs@2.5V, Ids@3.3A = 30m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications TSSOP-08 S

0.53. Size:373K ncepower
nce9926.pdf pdf_icon

Pb Free Product http //www.ncepower.com NCE9926 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =6A Schematic diagram RDS(ON)

0.54. Size:386K semtron
smc9926.pdf pdf_icon

SMC9926 20V Dual N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The SMC9926 is the Dual N-Channel logic 20V/8.0A, RDS(ON) =17m (typ.)@VGS =10V enhancement mode power field effect transistor is 20V/7.0A, RDS(ON) =18m (typ.)@VGS =4.5V produced using high cell density. advanced trench 20V/6.0A, RDS(ON) =23m (typ.)@VGS =2.5V technology to provide exce

0.55. Size:560K silicon standard
ssm9926gm.pdf pdf_icon

SSM9926GM Dual N-channel Enhancement-mode Power MOSFETs PRODUCT SUMMARY DESCRIPTION The SSM9926GM acheives fast switching performance BVDSS 20V with low gate charge without a complex drive circuit. It RDS(ON) 30m is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 6A D The SSM9926GM is supplied in an RoHS-compliant Pb-free; Ro

0.56. Size:264K silicon standard
ssm9926o.pdf pdf_icon

SSM9926O N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D2 D1 Low on-resistance Capable of 2.5V gate drive G2 G1 Low drive current S1 S2 Surface mount package DESCRIPTION BVDSS 20V RDS(ON) 28m The Advanced Power MOSFETs from Silicon Standard Corp. ID 4.6A provide the designer with the best combination of fast switching, ruggedized device design, ultra l

0.57. Size:242K silicon standard
ssm9926tgo.pdf pdf_icon

SSM9926TGO N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D2 D1 Low on-resistance Capable of 2.5V gate drive G2 G1 Surface mount package S1 S2 DESCRIPTION The Advanced Power MOSFETs from Silicon Standard Corp. BVDSS 20V provide the designer with the best combination of fast switching, RDS(ON) 32m ruggedized device design, ultra low on-resistance and ID 4.

0.58. Size:144K silicon standard
ssm9926em.pdf pdf_icon

SSM9926EM N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Low on-resistance BV 20V DSS D2 D2 Capable of 2.5V gate drive D1 RDS(ON) 30m D1 Low drive current I 6A D G2 S2 Surface-mount package G1 SO-8 S1 Description Power MOSFETs from Silicon Standard provide the D1 D2 designer with the best combination of fast switching, G1 G2 ruggedized device design, ultra low on-resistance a

0.59. Size:146K silicon standard
ssm9926geo.pdf pdf_icon

SSM9926GEO N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS G2 Low on-resistance BV 20V DSS S2 S2 D2 Capable of 2.5V gate drive RDS(ON) 28m G1 S1 Low drive current S1 I 4.6A D TSSOP-8 D1 Surface-mount package Description D1 D2 Power MOSFETs from Silicon Standard provide the G1 G2 designer with the best combination of fast switching, ruggedized device design, ultra low on-resista

0.60. Size:761K slkor
sl9926a.pdf pdf_icon

SL9926A 20V/6A Dual N-Channel MOSFET Features Product Summary Trench Power LV MOSFET technology VDS RDS(ON) MAX ID MAX High Power and current handing capability 30m @4.5V D2 20V S1 6A D1 45m @2.5V Application PWM application D1 Load Switch D1 D2 D2 D1 D1 D2 D2 S1 9926A Device code G1 XXXXX Code S2 9926A G2 XXXXX SOP-8 top view Schematic diagram

0.61. Size:3358K allpower
ap9926.pdf pdf_icon

0.62. Size:381K eternal
es9926.pdf pdf_icon

Eternal Semiconductor Inc. ES9926 Dual N-Channel High Density Trench MOSFET (20V, 6.0A) PRODUCT SUMMARY VDSS ID RDS(on) (m )Max 22 @ VGS = 4.5V, ID=6.0A 20V 6.0A 26 @ VGS = 2.5V, ID=5.2A Features Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Surface mount Package Lead Pb -free and halogen-free Absolute Maximum Ratings

0.63. Size:1780K guangdong hottech
9926a.pdf pdf_icon

Plastic-Encapsulate Mosfets Dual N-Channel Enhancement Mode Field Effect Transistor 9926A Features VDS (V) = 20V ID = 7A RDS(ON)

0.64. Size:3308K huashuo
hsm9926.pdf pdf_icon

HSM9926 Dual N-Ch 20V Fast Switching MOSFETs Description Product Summary VDS 20 V The HSM9926 is the high cell density trenched N- ch MOSFETs, which provide excellent RDSON and RDS(ON),max 28 m gate charge for most of the synchronous buck converter applications. ID 6 A The HSM9926 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function rel

0.65. Size:1005K jiejie micro
jmtp9926a.pdf pdf_icon

JMTP9926A Description JMT Dual N-channel Enhancement Mode Power MOSFET Features Applications 20V, 6.5A Load Switch RDS(ON)

0.66. Size:1008K jiejie micro
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JMTP9926B Description JMT Dual N-channel Enhancement Mode Power MOSFET Features Applications 20V, 6A Load Switch RDS(ON)

0.67. Size:948K lowpower
lpm9926.pdf pdf_icon

Preliminary Datasheet LPM9926 20V Dual N-Channel MOSFET General Description Features 100% EAS Guaranteed The LPM9926 uses advanced trench technology to provide excellent R , low gate charge and Green Device Available DS(ON) operation with gate voltages as low as 1.8V while Super Low Gate Charge retaining a 12V V rating. This device is suitable GS(MAX) Excelle

0.68. Size:684K cn shenzhen fuman elec
9926a.pdf pdf_icon

1 2 3 D FM , FM WWW.SZLCSC.COM, SHEN ZHEN FINE MAD ELECTRONICS GROUP CO., LTD. 9926A( S&CIC1368) 20V N MOS R (ON), Vgs@2.5V, Ids@5.0A = 42m DS R (ON), Vgs@4.5V, Ids@6.0A =

0.69. Size:158K cn puolop
pt9926.pdf pdf_icon

PT9926 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@2.5V, Ids@5.2A

0.70. Size:3466K cn tuofeng
9926b.pdf pdf_icon

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 9926B N-Channel Enhancement Mode Power MOSFET SOP-8L D2 Description D2 D1 The 9926B uses advanced trench technology to provide D1 excellent RDS(ON) and low gate charge . The complementary G2 G S2 MOSFETs may be used to form a level shifted high side G1 S S S1 SO-8 S switch, and for a hos

0.71. Size:3534K cn tuofeng
9926a.pdf pdf_icon

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 9926A N-Channel Enhancement Mode Power MOSFET SOP-8L D2 D2 Description D1 D1 The 9926A uses advanced trench technology to provide G2 excellent RDS(ON) and low gate charge . The complementary G S2 G1 S S S1 MOSFETs may be used to form a level shifted high side SO-8 S Pin 1 switch, and fo

0.72. Size:1325K winsok
wsp9926a.pdf pdf_icon

WSP9926A Dual N-Channel MOSFET General Description Product Summery The WSP9926A is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON 20V 20m 7.5A and gate charge for most of the small power switching and load switch applications. Applications The WSP9926A meet the RoHS and Green Product requirement w

0.73. Size:1018K winsok
wsp9926b.pdf pdf_icon

WSP9926B Dual N-Channel MOSFET General Description Product Summery The WSP9926B is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and 20V 17m 8A gate charge for most of the small power switching and load switch applications. Applications The WSP9926B meet the RoHS and Green Product requirement wit

0.74. Size:422K cn sino-ic
se9926.pdf pdf_icon

SHANGHAI June 2006 MICROELECTRONICS CO., LTD. SE9926 N-Channel Enhancement Mode Field Effect Transistor Revision B External Dimensions Features VDS = 20V,ID = 6A RDS(ON)

0.75. Size:2630K cn sps
sm9926.pdf pdf_icon

SM9926 Dual N-Channel Enhancement-Mode MOSFET(20V, 6A) PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 28 @ VGS = 4.5V, ID=6A 20V 6A 40 @ VGS =2.5V,ID=5.2A Features 1 Advanced Trench Process Technology. 2 High Density Cell Design for Ultra Low On-Resistance. 3 Lead free product is acquired. 4 Surface mount Package. 5 RoHS Compliant. Pin 1 Source1 Pin 2 Ga

0.76. Size:843K cn vbsemi
cem9926.pdf pdf_icon

CEM9926 www.VBsemi.tw Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET 20 0.035 at VGS = 2.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SO-8 D1 D2 S1 1 D1 8 G1 2 D1 7 S2 3 D2 6 G1 G2 G2 4 D2

0.77. Size:854K cn vbsemi
fds9926a.pdf pdf_icon

FDS9926A www.VBsemi.tw Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET 20 0.035 at VGS = 2.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SO-8 D1 D2 S1 1 D1 8 G1 2 D1 7 S2 3 D2 6 G1 G2 G2 4 D2

0.78. Size:881K cn vbsemi
sdm9926.pdf pdf_icon

SDM9926 www.VBsemi.tw Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET 20 0.035 at VGS = 2.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SO-8 D1 D2 S1 1 D1 8 G1 2 D1 7 S2 3 D2 6 G1 G2 G2 4 D2

0.79. Size:841K cn vbsemi
me9926.pdf pdf_icon

ME9926 www.VBsemi.tw Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET 20 0.035 at VGS = 2.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SO-8 D1 D2 S1 1 D1 8 G1 2 D1 7 S2 3 D2 6 G1 G2 G2 4 D2

0.80. Size:2313K cn vbsemi
vbza9926.pdf pdf_icon

VBZA9926 www.VBsemi.com Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.015at VGS = 10 V 8 TrenchFET Power MOSFET 20 0.023 at VGS = 4.5 V 5.5 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SO-8 D1 D2 S1 1 D1 8 G1 2 D1 7 S2 3 D2 6 G1 G2 G2 4 D2 5 Top

0.81. Size:1779K cn vbsemi
vbza9926a.pdf pdf_icon

VBZA9926A www.VBsemi.com Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.020 at VGS = 10 V 5.8 TrenchFET Power MOSFET 20 0.023 at VGS = 4.5 V 5.5 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SO-8 D1 D2 S1 1 D1 8 G1 2 D1 7 S2 3 D2 6 G1 G2 G2 4 D2 5

0.82. Size:494K cn hmsemi
hm9926.pdf pdf_icon

HM9926 Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =20V,ID =6A Schematic diagram RDS(ON)

0.83. Size:485K cn hmsemi
hm9926b.pdf pdf_icon

HM9926B Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM9926B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =20V,ID =5A Schematic diagram RDS(ON)

0.84. Size:1438K cn apm
ap9926a.pdf pdf_icon

AP9926A 20V N+N-Channel Enhancement Mode MOSFET Description The AP9926A uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =6.5A DS D R

Otros transistores... 2N6847U , 2303 , 2304 , 2305 , 4414 , 4614 , 4800 , 8958 , 4N60 , 045Y , 06N03 , 10N60A , 10N60AF , 10N60H , 10N80AF , 10N80B , 10N90A .