11N10 Todos los transistores

 ..1. Size:1709K  gfd
 11n10.pdf

11N10 DESCRIPTION The 11N10 uses advanced trench technology and VDSS RDS(ON) ID design to provide excellent R with low gate DS(ON) 100V 7.8m 110A charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =100V,ID =110A RDS(ON)

 0.1. Size:1313K  goford
 11n10c.pdf

GOFORD 11N10C General Description The 11N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for power switching application and LED backlighting. Features VDSS RDS(ON) ID Schematic Diagram @ 10V (typ) 11A 100V 85m Ultra Low On-Resistance High UIS and UIS 100% Test Applicatio

 0.2. Size:161K  solitron
 sdf11n100.pdf

 0.3. Size:1143K  gfd
 11n10g.pdf

11N10G General Description The 11N10G combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for power switching application and LED backlighting. Features VDSS RDS(ON) ID Schematic Diagram @ 10V (typ) 11A 100V 85m Ultra Low On-Resistance High UIS and UIS 100% Test Application

 0.4. Size:302K  ncepower
 ncep11n10as.pdf

NCEP11N10AS NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =12A uniquely optimized to provide the most efficient high frequency RDS(ON)=9.1m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=12m , typical@ VGS=4.5V losses are minim

 0.5. Size:717K  ncepower
 ncep11n10aqu.pdf

http //www.ncepower.com NCEP11N10AQU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP11N10AQU uses Super Trench II technology that is V =100V,I =55A DS D uniquely optimized to provide the most efficient high frequency R =10.5m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =13.5m (typical) @ V =4.5V DS(ON

 0.6. Size:363K  ncepower
 ncep11n10ak.pdf

http //www.ncepower.com NCEP11N10AK NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP11N10AK uses Super Trench II technology that is VDS =100V,ID =55A uniquely optimized to provide the most efficient high frequency RDS(ON)=11.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=14.5m (typical) @ VGS=4.5V lo

 0.7. Size:333K  ncepower
 ncep11n10agu.pdf

http //www.ncepower.com NCEP11N10AGU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP11N10AGU uses Super Trench II technology that is VDS =100V,ID =55A uniquely optimized to provide the most efficient high frequency RDS(ON)=10.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=13.5m (typical) @ VGS=4.5V