11N10DESCRIPTIONThe 11N10 uses advanced trench technology andVDSS RDS(ON) IDdesign to provide excellent R with low gateDS(ON)100V 7.8m 110Acharge. It can be used in a wide variety ofapplications.GENERAL FEATURES VDS =100V,ID =110ARDS(ON)

GOFORD11N10CGeneral Description The 11N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for power switching application and LED backlighting. Features VDSS RDS(ON) IDSchematic Diagram @10V (typ) 11A100V 85m Ultra Low On-Resistance High UIS and UIS 100% Test Applicatio

11N10GGeneral Description The 11N10G combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for power switching application and LED backlighting. Features VDSS RDS(ON) IDSchematic Diagram @10V (typ) 11A100V 85m Ultra Low On-Resistance High UIS and UIS 100% Test Application

NCEP11N10ASNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =12A uniquely optimized to provide the most efficient high frequency RDS(ON)=9.1m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=12m , typical@ VGS=4.5V losses are minim

http://www.ncepower.com NCEP11N10AQUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP11N10AQU uses Super Trench II technology that is V =100V,I =55ADS Duniquely optimized to provide the most efficient high frequency R =10.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =13.5m (typical) @ V =4.5VDS(ON

http://www.ncepower.com NCEP11N10AKNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP11N10AK uses Super Trench II technology that is VDS =100V,ID =55A uniquely optimized to provide the most efficient high frequency RDS(ON)=11.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=14.5m (typical) @ VGS=4.5V lo

http://www.ncepower.com NCEP11N10AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP11N10AGU uses Super Trench II technology that is VDS =100V,ID =55A uniquely optimized to provide the most efficient high frequency RDS(ON)=10.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=13.5m (typical) @ VGS=4.5V