Справочник MOSFET. 11N10

 

11N10 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 11N10
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 220 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 110 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 163 nC
   trⓘ - Время нарастания: 24 ns
   Cossⓘ - Выходная емкость: 380 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для 11N10

 

 

11N10 Datasheet (PDF)

 ..1. Size:1709K  gfd
 11n10.pdf

11N10 11N10

11N10DESCRIPTIONThe 11N10 uses advanced trench technology andVDSS RDS(ON) IDdesign to provide excellent R with low gateDS(ON)100V 7.8m 110Acharge. It can be used in a wide variety ofapplications.GENERAL FEATURES VDS =100V,ID =110ARDS(ON)

 0.1. Size:1313K  goford
 11n10c.pdf

11N10 11N10

GOFORD11N10CGeneral Description The 11N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for power switching application and LED backlighting. Features VDSS RDS(ON) IDSchematic Diagram @10V (typ) 11A100V 85m Ultra Low On-Resistance High UIS and UIS 100% Test Applicatio

 0.2. Size:161K  solitron
 sdf11n100.pdf

11N10

 0.3. Size:1143K  gfd
 11n10g.pdf

11N10 11N10

11N10GGeneral Description The 11N10G combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for power switching application and LED backlighting. Features VDSS RDS(ON) IDSchematic Diagram @10V (typ) 11A100V 85m Ultra Low On-Resistance High UIS and UIS 100% Test Application

 0.4. Size:302K  ncepower
 ncep11n10as.pdf

11N10 11N10

NCEP11N10ASNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =12A uniquely optimized to provide the most efficient high frequency RDS(ON)=9.1m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=12m , typical@ VGS=4.5V losses are minim

 0.5. Size:717K  ncepower
 ncep11n10aqu.pdf

11N10 11N10

http://www.ncepower.com NCEP11N10AQUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP11N10AQU uses Super Trench II technology that is V =100V,I =55ADS Duniquely optimized to provide the most efficient high frequency R =10.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =13.5m (typical) @ V =4.5VDS(ON

 0.6. Size:363K  ncepower
 ncep11n10ak.pdf

11N10 11N10

http://www.ncepower.com NCEP11N10AKNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP11N10AK uses Super Trench II technology that is VDS =100V,ID =55A uniquely optimized to provide the most efficient high frequency RDS(ON)=11.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=14.5m (typical) @ VGS=4.5V lo

 0.7. Size:333K  ncepower
 ncep11n10agu.pdf

11N10 11N10

http://www.ncepower.com NCEP11N10AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP11N10AGU uses Super Trench II technology that is VDS =100V,ID =55A uniquely optimized to provide the most efficient high frequency RDS(ON)=10.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=13.5m (typical) @ VGS=4.5V

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 12N70KG-TM3-T

 

 
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