12N60AF Todos los transistores

 ..1. Size:331K  nell
 12n60a 12n60af.pdf

RoHS I2N60 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET 12A, 600Volts DESCRIPTION The Nell 12N60 is a three-terminal silicon device with current conduction capability of D 12A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. They are designed for use in applications such as s

 0.1. Size:126K  jdsemi
 cm12n60af.pdf

R CM12N60AF www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LD E 2 1

 8.1. Size:115K  1
 hgtp12n60a4 hgtg12n60a4 hgt1s12n60a4s.pdf

HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S Data Sheet May 1999 File Number 4656.2 600V, SMPS Series N-Channel IGBT Features The HGTP12N60A4, HGTG12N60A4 and >100kHz Operation at 390V, 12A HGT1S12N60A4S are MOS gated high voltage switching 200kHz Operation at 390V, 9A devices combining the best features of MOSFETs and 600V Switching SOA Capability bipolar transistors. These de

 8.2. Size:173K  fairchild semi
 hgtg12n60a4d hgtp12n60a4d hgt1s12n60a4d.pdf

HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12A The HGTG12N60A4D, HGTP12N60A4D and 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9A HGT1S12N60A4DS are MOS gated high voltage switching

 8.3. Size:207K  fairchild semi
 hgtg12n60a4 hgtp12n60a4 hgt1s12n60a4.pdf

HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Data Sheet August 2003 600V, SMPS Series N-Channel IGBTs Features The HGTP12N60A4, HGTG12N60A4 and >100kHz Operation at 390V, 12A HGT1S12N60A4S9A are MOS gated high voltage switching 200kHz Operation at 390V, 9A devices combining the best features of MOSFETs and 600V Switching SOA Capability bipolar transistors. These devices ha

 8.4. Size:171K  ixys
 ixsa12n60au1.pdf

IXSA 12N60AU1 VCES = 600 V Low VCE(sat) IGBT IC25 = 24 A with Diode VCE(sat) = 2.5 V Short Circuit SOA Capability Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-263AA VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G VGES Continuous 20 V E TAB VGEM Transient 30 V G = Gate, C = Collector, IC25 TC = 25 C24 A E = Emitter

 8.5. Size:574K  onsemi
 hgtg12n60a4d hgtp12n60a4d hgt1s12n60a4ds.pdf

SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V HGTG12N60A4D, www.onsemi.com HGTP12N60A4D, HGT1S12N60A4DS C The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices G combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the E low on-state conduction los

 8.6. Size:123K  jdsemi
 cm12n60a to220a.pdf

R CM12N60A www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LD E 2 3

 8.7. Size:981K  belling
 bl12n60a-p bl12n60a-a.pdf

12N60A Power MOSFET 1 Description Step-Down Converter BL12N60A, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Par

 8.8. Size:784K  feihonltd
 fhp12n60a fhf12n60a.pdf

N N-CHANNEL MOSFET FHP12N60A/ FHF12N60A MAIN CHARACTERISTICS FEATURES Low gate charge ID 12A Crss ( 18pF) Low Crss (typical 18pF ) VDSS 600V Fast switching Rdson-typ 0.6 @Vgs=10V 100% 100% avalanche tested Qg-typ 52nC dv/dt Im

 8.9. Size:604K  trinnotech
 tmp12n60a tmpf12n60a.pdf

TMP12N60A(G)/TMPF12N60A(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 12A

 8.10. Size:356K  wuxi china
 cs12n60a8hd.pdf

Silicon N-Channel Power MOSFET R CS12N60 A8HD VDSS 600 V XGeneral Description ID 12 A CS12N60 A8HD, the silicon N-channel Enhanced PD (TC=25 ) 140 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 8.11. Size:352K  wuxi china
 cs12n60a8h.pdf

Silicon N-Channel Power MOSFET R CS12N60 A8H VDSS 600 V General Description ID 12 A CS12N60 A8H, the silicon N-channel Enhanced PD (TC=25 ) 140 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po