RoHS I2N60 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET12A, 600VoltsDESCRIPTION The Nell 12N60 is a three-terminal silicon device with current conduction capability ofD12A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V,and max. threshold voltage of 4 volts. They are designed for use in applications suchas s

RCM12N60AF www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LDE2 1

HGTP12N60A4, HGTG12N60A4,HGT1S12N60A4SData Sheet May 1999 File Number 4656.2600V, SMPS Series N-Channel IGBT FeaturesThe HGTP12N60A4, HGTG12N60A4 and >100kHz Operation at 390V, 12AHGT1S12N60A4S are MOS gated high voltage switching 200kHz Operation at 390V, 9Adevices combining the best features of MOSFETs and 600V Switching SOA Capabilitybipolar transistors. These de

HGTG12N60A4D, HGTP12N60A4D,HGT1S12N60A4DSData Sheet December 2001600V, SMPS Series N-Channel IGBT with FeaturesAnti-Parallel Hyperfast Diode >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12AThe HGTG12N60A4D, HGTP12N60A4D and 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9AHGT1S12N60A4DS are MOS gated high voltage switching

HGTP12N60A4, HGTG12N60A4,HGT1S12N60A4S9AData Sheet August 2003600V, SMPS Series N-Channel IGBTs FeaturesThe HGTP12N60A4, HGTG12N60A4 and >100kHz Operation at 390V, 12AHGT1S12N60A4S9A are MOS gated high voltage switching 200kHz Operation at 390V, 9Adevices combining the best features of MOSFETs and 600V Switching SOA Capabilitybipolar transistors. These devices ha

IXSA 12N60AU1 VCES = 600 VLow VCE(sat) IGBTIC25 = 24 Awith DiodeVCE(sat) = 2.5 VShort Circuit SOA CapabilityPreliminary data sheetSymbol Test Conditions Maximum RatingsTO-263AAVCES TJ = 25 C to 150 C 600 VVCGR TJ = 25 C to 150 C; RGE = 1 M 600 VGVGES Continuous 20 VETABVGEM Transient 30 VG = Gate, C = Collector,IC25 TC = 25 C24 AE = Emitter

SMPS Series N-ChannelIGBT with Anti-ParallelHyperfast Diode600 VHGTG12N60A4D,www.onsemi.comHGTP12N60A4D,HGT1S12N60A4DSCThe HGTG12N60A4D, HGTP12N60A4D andHGT1S12N60A4DS are MOS gated high voltage switching devicesGcombining the best features of MOSFETs and bipolar transistors.These devices have the high input impedance of a MOSFET and theElow on-state conduction los

RCM12N60A www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LDE2 3

12N60A Power MOSFET 1Description Step-Down Converter BL12N60A, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Par

N N-CHANNEL MOSFET FHP12N60A/ FHF12N60A MAIN CHARACTERISTICS FEATURES Low gate charge ID 12A Crss ( 18pF) Low Crss (typical 18pF ) VDSS 600V Fast switching Rdson-typ 0.6 @Vgs=10V 100% 100% avalanche tested Qg-typ 52nC dv/dt Im

TMP12N60A(G)/TMPF12N60A(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 12A

Silicon N-Channel Power MOSFET R CS12N60 A8HD VDSS 600 V XGeneral Description ID 12 A CS12N60 A8HD, the silicon N-channel Enhanced PD (TC=25) 140 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

Silicon N-Channel Power MOSFET R CS12N60 A8H VDSS 600 V General Description ID 12 A CS12N60 A8H, the silicon N-channel Enhanced PD (TC=25) 140 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po