1N60G MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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RoHS 1N60 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (1.2A, 600Volts) DESCRIPTION The Nell 1N60 is a three-terminal silicon D D device with current conduction capability of 1.2A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. G They are designed for use in applications suc

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UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

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UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

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UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

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1n60l-aa3-r 1n60g-aa3-r 1n60l-ab3-r 1n60g-ab3-r 1n60l-tm3-t 1n60g-tm3-t 1n60l-tn3-r 1n60g-tn3-r 1n60l-t60-k 1n60g-t60-k 1n60l-t92-b 1n60g-t92-b 1n60l-t92-k 1n60g-t92-k.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD 1N60-KW Power MOSFET 1A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

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1n60l-tms2-t 1n60g-tms2-t 1n60l-tms4-t 1n60g-tms4-t 1n60l-tn3-r 1n60g-tn3-r 1n60l-tnd-r 1n60g-tnd-r 1n60l-t60-k 1n60g-t60-k 1n60l-t92-b 1n60g-t92-b 1n60l-t92-k.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

0.6. Size:453K utc
1n60l-aa3-r 1n60g-aa3-r 1n60l-ta3-t 1n60g-ta3-t 1n60l-tf2-t 1n60g-tf2-t 1n60l-tf3-t 1n60g-tf3-t 1n60l-tm3-t 1n60g-tm3-t 1n60l-tms-t 1n60g-tms-t 1n60g-t92-k.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

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