All MOSFET. 1N60G Datasheet

 

1N60G Datasheet and Replacement


   Type Designator: 1N60G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 1.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 11.5 Ohm
   Package: TO-252
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1N60G Datasheet (PDF)

 ..1. Size:596K  nell
 1n60af 1n60e 1n60f 1n60g.pdf pdf_icon

1N60G

RoHS 1N60 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(1.2A, 600Volts)DESCRIPTION The Nell 1N60 is a three-terminal silicon DDdevice with current conduction capabilityof 1.2A, fast switching speed, low on-stateresistance, breakdown voltage rating of 600V,and max. threshold voltage of 4 volts.G They are designed for use in applications suc

 0.1. Size:361K  utc
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1N60G

UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

 0.2. Size:361K  utc
 1n60g-aa3-r 1n60l-ta3-t 1n60g-ta3-t 1n60l-tf2-t 1n60g-tf2-t 1n60l-tf3-t 1n60g-tf3-t 1n60l-tm3-t 1n60g-tm3-t.pdf pdf_icon

1N60G

UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

 0.3. Size:361K  utc
 1n60l-t92-b 1n60g-t92-b 1n60l-t92-k 1n60g-t92-k 1n60l-tms-t 1n60g-tms-t 1n60l-t60-k 1n60g-t60-k.pdf pdf_icon

1N60G

UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

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History: BSZ035N03LSG | SVF9N90F

Keywords - 1N60G MOSFET datasheet

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