1N60G PDF and Equivalents Search

 

1N60G Specs and Replacement

Type Designator: 1N60G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 11.5 Ohm

Package: TO-252

1N60G substitution

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1N60G datasheet

 ..1. Size:596K  nell
1n60af 1n60e 1n60f 1n60g.pdf pdf_icon

1N60G

RoHS 1N60 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (1.2A, 600Volts) DESCRIPTION The Nell 1N60 is a three-terminal silicon D D device with current conduction capability of 1.2A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. G They are designed for use in applications suc... See More ⇒

 0.1. Size:361K  utc
1n60l-tms2-t 1n60g-tms2-t 1n60l-tms4-t 1n60g-tms4-t 1n60l-tn3-r 1n60g-tn3-r 1n60l-tnd-r 1n60g-tnd-r.pdf pdf_icon

1N60G

UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in ... See More ⇒

 0.2. Size:361K  utc
1n60g-aa3-r 1n60l-ta3-t 1n60g-ta3-t 1n60l-tf2-t 1n60g-tf2-t 1n60l-tf3-t 1n60g-tf3-t 1n60l-tm3-t 1n60g-tm3-t.pdf pdf_icon

1N60G

UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in ... See More ⇒

 0.3. Size:361K  utc
1n60l-t92-b 1n60g-t92-b 1n60l-t92-k 1n60g-t92-k 1n60l-tms-t 1n60g-tms-t 1n60l-t60-k 1n60g-t60-k.pdf pdf_icon

1N60G

UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in ... See More ⇒

Detailed specifications: 16N60AF, 16N60B, 19MT050XFAPBF, 1HN04CH, 1HP04CH, 1N60AF, 1N60E, 1N60F, IRLB3034, 20N50B, 20N60A, 24N50A, 24N50B, 24N50C, 2MI50S-050, 30N20A, 38N10A

Keywords - 1N60G MOSFET specs

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