24N50C Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 24N50C  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 290 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 24 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 250 nS

Cossⓘ - Capacitancia de salida: 520 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm

Encapsulados: TO-247AB

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24N50C datasheet

 ..1. Size:484K  nell
 24n50b 24n50c.pdf pdf_icon

24N50C

RoHS 24N50 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET 24A, 500Volts DESCRIPTION D The Nell 24N50 is a three-terminal silicon device with current conduction capability of 24A, fast switching speed, low on-state resistance, breakdown voltage rating of 500V, and max. threshold voltage of 4 volts. They are designed for use in applications such as G

 0.1. Size:497K  jiaensemi
 jfam24n50c.pdf pdf_icon

24N50C

JFAM24N50C 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 0.2. Size:505K  jiaensemi
 jfpc24n50c jffm24n50c.pdf pdf_icon

24N50C

JFFM24N50C JFPC24N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 24A, 500V, RDS(on)typ. = 0.19 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf

 0.3. Size:959K  maple semi
 slw24n50c.pdf pdf_icon

24N50C

SLW24N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 25A, 500V, RDS(on)typ. = 167m @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 96nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching performanc

MOSTRAR MÁS

Otros transistores... 1N60AF, 1N60E, 1N60F, 1N60G, 20N50B, 20N60A, 24N50A, 24N50B, EMB04N03H, 2MI50S-050, 30N20A, 38N10A, BCS4N10, BFC60, BFD63, BFD71, BFD77