All MOSFET. 24N50C Datasheet

 

24N50C MOSFET. Datasheet pdf. Equivalent

Type Designator: 24N50C

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 290 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 24 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 90 nC

Rise Time (tr): 250 nS

Drain-Source Capacitance (Cd): 520 pF

Maximum Drain-Source On-State Resistance (Rds): 0.2 Ohm

Package: TO-247AB

24N50C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

24N50C Datasheet (PDF)

0.1. 24n50b 24n50c.pdf Size:484K _nell

24N50C
24N50C

RoHS 24N50 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET24A, 500VoltsDESCRIPTIOND The Nell 24N50 is a three-terminal silicon devicewith current conduction capability of 24A, fast switchingspeed, low on-state resistance, breakdown voltagerating of 500V, and max. threshold voltage of 4 volts. They are designed for use in applications such as G

9.1. fqa24n50f.pdf Size:641K _fairchild_semi

24N50C
24N50C

September 2001TMFRFETFQA24N50F500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 24A, 500V, RDS(on) = 0.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 90 nC)planar stripe, DMOS technology. Low Crss ( typical 55 pF)This advanced technology has been especially tail

9.2. fda24n50f.pdf Size:670K _fairchild_semi

24N50C
24N50C

November 2008UniFETTMFDA24N50FtmN-Channel MOSFET 500V, 24A, 0.2Features Description RDS(on) = 0.166 ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge ( Typ. 65nC)DMOS technology. Low Crss ( Typ. 32pF)This advance technology has been esp

 9.3. fqa24n50.pdf Size:1520K _fairchild_semi

24N50C
24N50C

June 2014FQA24N50N-Channel QFET MOSFET500 V, 24 A, 200 mFeatures Description 24 A, 500 V, RDS(on) = 200 m (Max.) @ VGS = 10 V, ID = 12 A These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low Gate Charge (Typ. 90 nC)stripe, DMOS technology. Low Crss (Typ. 55 pF)This advanced technology has been e

9.4. fda24n50.pdf Size:688K _fairchild_semi

24N50C
24N50C

August 2008UniFETTMFDA24N50N-Channel MOSFET 500V, 24A, 0.19Features Description RDS(on) = 0.16 ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 65nC)DMOS technology. Low Crss ( Typ. 35pF)This advance technology has been especially t

 9.5. fqa24n50 f109.pdf Size:749K _fairchild_semi

24N50C
24N50C

April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 24A, 500V, RDS(on) = 0.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 90 nC)planar stripe, DMOS technology. Low Crss ( typical 55 pF)This advanced technology has been e

9.6. mtm24n50.pdf Size:52K _njs

24N50C

9.7. ixfr24n50 ixfr26n50.pdf Size:33K _ixys

24N50C
24N50C

Advanced Technical InformationVDSS ID25 RDS(on)HiPerFETTM Power MOSFETsIXFR 26N50 500 V 24 A 0.20 WISOPLUS247TMIXFR 24N50 500 V 22 A 0.23 W(Electrically Isolated Back Surface)trr 250 nsN-Channel Enhancement ModeHigh dV/dt, Low trr, HDMOSTM FamilyISOPLUS 247TMSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 MW 50

9.8. ixfh24n50q ixft24n50q ixfh26n50q ixft26n50q.pdf Size:145K _ixys

24N50C
24N50C

HiPerFETTM VDSS ID25 RDS(on)Power MOSFETs IXFH/IXFT 24N50Q 500 V 24 A 0.23 IXFH/IXFT 26N50Q 500 V 26 A 0.20 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, Low Qg, High dv/dtSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1

9.9. ixth21n50 ixth24n50 ixtm21n50 ixtm24n50.pdf Size:108K _ixys

24N50C
24N50C

VDSS ID25 RDS(on)MegaMOSTMFETIXTH / IXTM 21N50 500 V 21 A 0.25 IXTH / IXTM 24N50 500 V 24 A 0.23 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VD (TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C 21N50 21 A

9.10. ixfh21n50 ixfh24n50 ixfh26n50 ixfm21n50 ixfm24n50 ixfm26n50 ixft24n50 ixft26n50.pdf Size:158K _ixys

24N50C
24N50C

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM21N50 500 V 21 A 0.25 Power MOSFETsIXFH/IXFM/IXFT24N50 500 V 24 A 0.23 IXFH/IXFT26N50 500 V 26 A 0.20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr 250 ns TO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to

9.11. ixfr24n50q ixfr26n50q.pdf Size:78K _ixys

24N50C
24N50C

VDSS ID25 RDS(on)HiPerFETTM Power MOSFETsIXFR 26N50Q 500 V 24 A 0.20 ISOPLUS247TMIXFR 24N50Q 500 V 22 A 0.23 (Electrically Isolated Back Surface) trr 250 ns N-Channel Enhancement ModeHigh dV/dt, Low t , HDMOSTM FamilyrrSymbol Test Conditions Maximum Ratings ISOPLUS 247TME153432VDSS TJ = 25C to 150C

9.12. 24n50.pdf Size:210K _utc

24N50C
24N50C

UNISONIC TECHNOLOGIES CO., LTD 24N50 Power MOSFET 24A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 24N50 is an N-channel mode power MOSFET usingUTCs advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the aval

9.13. 24n50a.pdf Size:34K _microsemi

24N50C
24N50C

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220FAX: (714) 966-5256MSAFX24N50AFeatures500 Volts Ultrafast body diode24 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability230 m Hermetically sealed, surface mount power package Low package inductance Very low thermal resistanceN-CHANNE

9.14. sff24n50.pdf Size:28K _ssdi

24N50C
24N50C

SFF24N50/3 SFF24N50/3T Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 24 AMP / 500 Volts DESIGNERS DATA SHEET 0.2 N-Channel Features: Power MOSFET Rugged Construction with Polysilicon Gate Cell Low R and High Transconductance DS(ON) Excellent H

9.15. sff24n50n sff24n50p.pdf Size:166K _ssdi

24N50C
24N50C

9.16. sff24n50b.pdf Size:152K _ssdi

24N50C
24N50C

9.17. jcs24n50wh-abh.pdf Size:1012K _jilin_sino

24N50C
24N50C

N lSX:_W:WHe^vfSO{ N- CHANNEL MOSFET RJCS24N50H ;NSpe MAIN CHARACTERISTICS \ Package ID 24 A VDSS 500 V Rdson-max 0.19 @Vgs=10V Qg-typ 81nC APPLICATIONS (u l High efficienc

9.18. sdf24n50.pdf Size:153K _solitron

24N50C

9.19. cs24n50 anhd.pdf Size:678K _crhj

24N50C
24N50C

Silicon N-Channel Power MOSFET R CS24N50 ANHD General Description VDSS 500 V CS24N50 ANHD, the silicon N-channel Enhanced ID 24 A PD(TC=25) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.18 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

9.20. cs24n50.pdf Size:124K _china

24N50C

CS24N50 N PD TC=25 300 W 0.40 W/ ID VGS=10V,TC=25 24 A IDM 96 VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.42 /W BVDSS VGS=0V,ID=0.25mA 500 V RDS on VGS=10V,ID=12A 0.23 VGS th VDS=VGS,ID=4mA 2.

9.21. wfw24n50w.pdf Size:463K _winsemi

24N50C
24N50C

WFW24N50WWFW24N50WWFW24N50WWFW24N50WSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 24A,500V,RDS(on)(Max0.19)@VGS=10V Ultra-low Gate charge(Typical 90nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis N-Channel enhancement mod

9.22. wfw24n50n.pdf Size:428K _winsemi

24N50C
24N50C

WFW24N50NWFW24N50NWFW24N50NWFW24N50NSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 24A,500V,RDS(on)(Max0.19)@VGS=10V Ultra-low Gate charge(Typical 90nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis N-Channel enhancement mod

9.23. fha24n50a.pdf Size:631K _feihonltd

24N50C
24N50C

9.24. fqa24n50f.pdf Size:210K _inchange_semiconductor

24N50C
24N50C

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FQA24N50FFEATURESWith TO-3PN packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

9.25. fda24n50f.pdf Size:209K _inchange_semiconductor

24N50C
24N50C

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FDA24N50FFEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

9.26. ixtm24n50.pdf Size:253K _inchange_semiconductor

24N50C
24N50C

Isc N-Channel MOSFET Transistor IXTM24N50FEATURESWith To-3 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top