BLM2302 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BLM2302
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 2.9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 50 nS
Cossⓘ - Capacitancia de salida: 120 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de BLM2302 MOSFET
BLM2302 Datasheet (PDF)
blm2302.pdf

Pb Free Product BLM2302 N-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe BLM2302 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES V = 20V,I = 2.9A D
blm2301.pdf

Pb Free Product BLM2301 P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe BLM2301 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram V = -20V,I = -3A DS DR
blm2305.pdf

Pb Free Product BLM2305 P-Channel Enhancement Mode Power MOSFET Description D The BLM2305 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features V = -20V,I = -4.2ADS D RDS(ON)
Otros transistores... BFC60 , BFD63 , BFD71 , BFD77 , BFD82 , BFD88 , BLM138K , BLM2301 , 20N60 , BLM2305 , BLM3400 , BLM3401 , BLM3401A , BLM3407 , BLM3407A , BLM3415 , BLM4435 .
History: BUZ205
History: BUZ205



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