BLM2302 Datasheet and Replacement
Type Designator: BLM2302
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 2.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: SOT-23
BLM2302 substitution
BLM2302 Datasheet (PDF)
blm2302.pdf

Pb Free Product BLM2302 N-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe BLM2302 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES V = 20V,I = 2.9A D
blm2301.pdf

Pb Free Product BLM2301 P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe BLM2301 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram V = -20V,I = -3A DS DR
blm2305.pdf

Pb Free Product BLM2305 P-Channel Enhancement Mode Power MOSFET Description D The BLM2305 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features V = -20V,I = -4.2ADS D RDS(ON)
Datasheet: BFC60 , BFD63 , BFD71 , BFD77 , BFD82 , BFD88 , BLM138K , BLM2301 , 20N60 , BLM2305 , BLM3400 , BLM3401 , BLM3401A , BLM3407 , BLM3407A , BLM3415 , BLM4435 .
History: BLM3407 | GWM180-004X2-SL | WML26N60C4 | IRFR48Z | SUD25N06-45L
Keywords - BLM2302 MOSFET datasheet
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History: BLM3407 | GWM180-004X2-SL | WML26N60C4 | IRFR48Z | SUD25N06-45L



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