BLM3401 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BLM3401
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 3 nS
   Cossⓘ - Capacitancia de salida: 115 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm
   Paquete / Cubierta: SOT-23

Búsqueda de reemplazo de MOSFET BLM3401

BLM3401 Datasheet (PDF)

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blm3401.pdf

P-Channel Enhancement BLM3401 Mode MOSFET BLM3401BLM3401 BLM3401FEATURES APPLICATIONS VDS VGS RDSon TYP ID Load Switch 51mR@-10V 4A Portable Devices 30V 12V 60mR@-4V5 DCDC conversion 98mR@-2V5 Pin Configuration DESCRIPTION This device is particularly suited for low voltage application such as portable equipment, power management and other

0.1. Size:190K belling
blm3401a.pdf

Pb Free Product BLM3401A P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe BLM3401A uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES V = -30V,I = -4.4A DS DR

8.1. Size:78K belling
blm3400.pdf

Pb Free Product BLM3400 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The BLM3400 uses advanced trench technology to provide Dexcellent R , low gate charge and operation with gate DS(ON)voltages as low as 2.5V. This device is suitable for use as a GBattery protection or in other Switching application. SGENERAL FEATURES V = 30V,I = 5.8A Schematic diagram DS

8.2. Size:215K belling
blm3407a.pdf

Pb Free Product BLM3407A P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe BLM3407A uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)Gvoltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram V = -30V,I = -4.3A DS DR

8.3. Size:215K belling
blm3407.pdf

Pb Free Product BLM3407 P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe BLM3407 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)Gvoltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram V = -30V,I = -4.1A DS DR

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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