BLM3401
MOSFET. Datasheet pdf. Equivalent
Type Designator: BLM3401
Marking Code: 3401
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3
V
|Id|ⓘ - Maximum Drain Current: 4.2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 9.5
nC
trⓘ - Rise Time: 3
nS
Cossⓘ -
Output Capacitance: 115
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055
Ohm
Package:
SOT-23
BLM3401
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BLM3401
Datasheet (PDF)
..1. Size:190K belling
blm3401.pdf
P-Channel Enhancement BLM3401 Mode MOSFET BLM3401BLM3401 BLM3401FEATURES APPLICATIONS VDS VGS RDSon TYP ID Load Switch 51mR@-10V 4A Portable Devices 30V 12V 60mR@-4V5 DCDC conversion 98mR@-2V5 Pin Configuration DESCRIPTION This device is particularly suited for low voltage application such as portable equipment, power management and other
0.1. Size:190K belling
blm3401a.pdf
Pb Free Product BLM3401A P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe BLM3401A uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES V = -30V,I = -4.4A DS DR
8.1. Size:78K belling
blm3400.pdf
Pb Free Product BLM3400 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The BLM3400 uses advanced trench technology to provide Dexcellent R , low gate charge and operation with gate DS(ON)voltages as low as 2.5V. This device is suitable for use as a GBattery protection or in other Switching application. SGENERAL FEATURES V = 30V,I = 5.8A Schematic diagram DS
8.2. Size:215K belling
blm3407a.pdf
Pb Free Product BLM3407A P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe BLM3407A uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)Gvoltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram V = -30V,I = -4.3A DS DR
8.3. Size:215K belling
blm3407.pdf
Pb Free Product BLM3407 P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe BLM3407 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)Gvoltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram V = -30V,I = -4.1A DS DR
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