2SJ126 Todos los transistores

 

2SJ126 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ126

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 40 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm

Encapsulados: TO-220C

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2SJ126 datasheet

 ..1. Size:215K  inchange semiconductor
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2SJ126

isc P-Channel MOSFET Transistor 2SJ126 DESCRIPTION Low Drain-Source ON Resistance High Forward Transfer Admittance Low Leakage Current Enhancement-Mode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed switching application Switching regulator ,DC-DC converter and Motor drive application ABSOLUTE MAXIMUM RATINGS(

 9.1. Size:2691K  renesas
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2SJ126

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.2. Size:998K  nec
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2SJ126

 9.3. Size:283K  nec
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2SJ126

Otros transistores... BLM7002K , BLM8205 , BLM8205A , BLM9435 , BLM9435A , BLM9926 , 20N15 , 25N40A , 8205A , 2SK1105 , 2SK1917-M , 2SK1938-01 , 2SK1939-01 , 2SK1982-01M , 2SK2020-01MR , 2SK2645 , 2SK2850 .

History: IPW60R060P7

 

 

 


History: IPW60R060P7

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