2SJ126 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SJ126
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 40 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
Paquete / Cubierta: TO-220C
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2SJ126 Datasheet (PDF)
2sj126.pdf

isc P-Channel MOSFET Transistor 2SJ126DESCRIPTIONLow Drain-Source ON ResistanceHigh Forward Transfer AdmittanceLow Leakage CurrentEnhancement-ModeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed switching applicationSwitching regulator ,DC-DC converter and Motordrive applicationABSOLUTE MAXIMUM RATINGS(
2sj128-z.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Otros transistores... BLM7002K , BLM8205 , BLM8205A , BLM9435 , BLM9435A , BLM9926 , 20N15 , 25N40A , 2SK3878 , 2SK1105 , 2SK1917-M , 2SK1938-01 , 2SK1939-01 , 2SK1982-01M , 2SK2020-01MR , 2SK2645 , 2SK2850 .
History: ME2306AN-G | 30N20A | IRFS151 | NTMFS5C468NLT1G | APT10050B2VFRG | SVT20240NP7 | CS48N78
History: ME2306AN-G | 30N20A | IRFS151 | NTMFS5C468NLT1G | APT10050B2VFRG | SVT20240NP7 | CS48N78



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