2SJ126 PDF and Equivalents Search

 

2SJ126 Specs and Replacement

Type Designator: 2SJ126

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO-220C

2SJ126 substitution

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2SJ126 datasheet

 ..1. Size:215K  inchange semiconductor
2sj126.pdf pdf_icon

2SJ126

isc P-Channel MOSFET Transistor 2SJ126 DESCRIPTION Low Drain-Source ON Resistance High Forward Transfer Admittance Low Leakage Current Enhancement-Mode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed switching application Switching regulator ,DC-DC converter and Motor drive application ABSOLUTE MAXIMUM RATINGS(... See More ⇒

 9.1. Size:2691K  renesas
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2SJ126

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 9.2. Size:998K  nec
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2SJ126

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 9.3. Size:283K  nec
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2SJ126

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Detailed specifications: BLM7002K, BLM8205, BLM8205A, BLM9435, BLM9435A, BLM9926, 20N15, 25N40A, 8205A, 2SK1105, 2SK1917-M, 2SK1938-01, 2SK1939-01, 2SK1982-01M, 2SK2020-01MR, 2SK2645, 2SK2850

Keywords - 2SJ126 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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