2SJ126 Specs and Replacement
Type Designator: 2SJ126
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO-220C
2SJ126 substitution
- MOSFET ⓘ Cross-Reference Search
2SJ126 datasheet
2sj126.pdf
isc P-Channel MOSFET Transistor 2SJ126 DESCRIPTION Low Drain-Source ON Resistance High Forward Transfer Admittance Low Leakage Current Enhancement-Mode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed switching application Switching regulator ,DC-DC converter and Motor drive application ABSOLUTE MAXIMUM RATINGS(... See More ⇒
2sj128-z.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
Detailed specifications: BLM7002K, BLM8205, BLM8205A, BLM9435, BLM9435A, BLM9926, 20N15, 25N40A, 8205A, 2SK1105, 2SK1917-M, 2SK1938-01, 2SK1939-01, 2SK1982-01M, 2SK2020-01MR, 2SK2645, 2SK2850
Keywords - 2SJ126 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: WML18N70EM | WMM38N60C2
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