2SK1982-01M MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK1982-01M
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 50 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 40 nS
Cossⓘ - Capacitancia de salida: 160 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.76 Ohm
Encapsulados: TO-220F
Búsqueda de reemplazo de 2SK1982-01M MOSFET
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2SK1982-01M datasheet
..1. Size:230K inchange semiconductor
2sk1982-01m.pdf 
isc N-Channel MOSFET Transistor 2SK1982-01M DESCRIPTION Drain Current I = 10A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a
7.1. Size:212K inchange semiconductor
2sk1982.pdf
isc N-Channel MOSFET Transistor 2SK1982 DESCRIPTION Drain Current I = 10A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UN
8.2. Size:31K panasonic
2sk1980.pdf
Power F-MOS FETs 2SK1980 2SK1980 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed EAS > 15mJ 3.4 0.3 8.5 0.2 6.0 0.5 1.0 0.1 VGSS= 30V guaranteed High-speed switching tf= 25ns No secondary breakdown 1.5max. 1.1max. Applications Non-contact relay 0.8 0.1 0.5max. Solenoid drive 2.54 0.3 Motor drive 5.08 0.5 Control
8.4. Size:249K fuji
2sk1986-01.pdf
FUJI POWER MOSFET 2SK1986-01 N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching TO-220AB Low on-resistance No secondary breakdown Low driving power High voltage VGS= 30V Guarantee Avalanche-proof Applications Switching regulators UPS 3. Source DC-DC converters JEDEC TO-220AB General purpose power amplifier EIAJ SC-46 Equivalent c
8.6. Size:212K fuji
2sk1981-01.pdf
N-channel MOS-FET 2SK1981-01 FAP-IIA Series 500V 0,76 10A 80W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equi
8.7. Size:210K fuji
2sk1983-01.pdf
N-channel MOS-FET 2SK1983-01 FAP-IIA Series 900V 4 3A 60W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equivale
8.8. Size:192K fuji
2sk1984-01mr.pdf
2SK1984-01MR N-channel MOS-FET FAP-IIA Series 900V 4 3A 40W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equival
8.9. Size:212K inchange semiconductor
2sk1984.pdf
isc N-Channel MOSFET Transistor 2SK1984 DESCRIPTION Drain Current I = 3A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNI
8.10. Size:215K inchange semiconductor
2sk1981.pdf
isc N-Channel MOSFET Transistor 2SK1981 DESCRIPTION Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 500 V
8.11. Size:216K inchange semiconductor
2sk1983.pdf
isc N-Channel MOSFET Transistor 2SK1983 DESCRIPTION Drain Current I = 3A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB
8.12. Size:213K inchange semiconductor
2sk1985.pdf
isc N-Channel MOSFET Transistor 2SK1985 DESCRIPTION Drain Current I = 5A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNI
Otros transistores... BLM9926
, 20N15
, 25N40A
, 2SJ126
, 2SK1105
, 2SK1917-M
, 2SK1938-01
, 2SK1939-01
, AON7408
, 2SK2020-01MR
, 2SK2645
, 2SK2850
, 40N10
, 50N15
, 60N05
, 60N05-16
, 60N06-18
.
