All MOSFET. 2SK1982-01M Datasheet

 

2SK1982-01M Datasheet and Replacement


   Type Designator: 2SK1982-01M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.76 Ohm
   Package: TO-220F
 

 2SK1982-01M substitution

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2SK1982-01M Datasheet (PDF)

 ..1. Size:230K  inchange semiconductor
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2SK1982-01M

isc N-Channel MOSFET Transistor 2SK1982-01MDESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)a

 0.1. Size:148K  fuji
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2SK1982-01M

 7.1. Size:212K  inchange semiconductor
2sk1982.pdf pdf_icon

2SK1982-01M

isc N-Channel MOSFET Transistor 2SK1982DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UN

 8.1. Size:433K  1
2sk1988 2sk1989.pdf pdf_icon

2SK1982-01M

Datasheet: BLM9926 , 20N15 , 25N40A , 2SJ126 , 2SK1105 , 2SK1917-M , 2SK1938-01 , 2SK1939-01 , 2N7000 , 2SK2020-01MR , 2SK2645 , 2SK2850 , 40N10 , 50N15 , 60N05 , 60N05-16 , 60N06-18 .

History: UTT50P10 | PTF10149

Keywords - 2SK1982-01M MOSFET datasheet

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