40N10 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 40N10
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 150 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 40 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 30 nS
Cossⓘ - Capacitancia de salida: 2500 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
Encapsulados: TO-220C
Búsqueda de reemplazo de 40N10 MOSFET
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40N10 datasheet
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mpg40n10p.pdf
100V N-Channel Power MOSFET DESCRIPTION The MPG40N10P uses advanced trench technology toprovide excellent R , low gate charge. It can be used in a wide DS(ON) variety of applications. KEY CHARACTERISTICS V = 100V,I =40A DS D R
mdt40n10d.pdf
100V N-Channel Power MOSFET DESCRIPTION The MDT40N10D uses advanced trench technology to provide excellent R , low gate charge. It can be used DS(ON) in a wide variety of applications. KEY CHARACTERISTICS V = 100V,I = 40A R
fqa140n10.pdf
isc N-Channel MOSFET Transistor FQA140N10 FEATURES Drain Current I = 140A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R =0.1 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in audio amplifier, high efficiency switching D
apg40n10df.pdf
APG40N10DF 100V N-Channel Enhancement Mode MOSFET Description The APG40N10DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =40A DS D R
apg40n10d.pdf
APG40N10D 100V N-Channel Enhancement Mode MOSFET Description The APG40N10D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =40A DS D R
apg40n10nf.pdf
APG40N10NF 100V N-SGT Enhancement Mode MOSFET General Description APG40N10NF use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uni
ap40n10p.pdf
AP40N10P 100V N-Channel Enhancement Mode MOSFET Description The AP40N10P uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =40A DS D R
apg40n10s.pdf
APG40N10S 100V N-Channel Enhancement Mode MOSFET Description The APG40N10D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =40A DS D R
Otros transistores... 2SK1105 , 2SK1917-M , 2SK1938-01 , 2SK1939-01 , 2SK1982-01M , 2SK2020-01MR , 2SK2645 , 2SK2850 , IRF9540N , 50N15 , 60N05 , 60N05-16 , 60N06-18 , 60N10 , 6N70A , 75N06 , 75N10 .
History: WNM2030
History: WNM2030
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