60N05 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 60N05
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 150 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 60 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 17 nS
Cossⓘ - Capacitancia de salida: 169 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
Encapsulados: TO-220C
Búsqueda de reemplazo de 60N05 MOSFET
- Selecciónⓘ de transistores por parámetros
60N05 datasheet
..1. Size:236K inchange semiconductor
60n05.pdf 
INCHANGE Semiconductor isc N-Channel MOSFET Transistor 60N05 DESCRIPTION Drain Current I = 60A@ T =25 D C Static Drain-Source On-Resistance R = 18m (Max) DS(on) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General purpose power amplifier High current,high speed switching Solenoid and relay
0.2. Size:216K motorola
mtb60n05hdl.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB60N05HDL/D Product Preview MTB60N05HDL HDTMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET 60 AMPERES N Channel Enhancement Mode Silicon Gate 50 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.014 OHM than any existing surface mou
0.3. Size:171K motorola
mtp60n05hdl.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP60N05HDL/D Product Preview MTP60N05HDL HDTMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high cell density HDTMOS power FET is 60 AMPERES designed to withstand high energy in the avalanche and commuta- 50 VOLTS tion modes.
0.4. Size:166K motorola
mtp60n05hdlrev0.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP60N05HDL/D Product Preview MTP60N05HDL HDTMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high cell density HDTMOS power FET is 60 AMPERES designed to withstand high energy in the avalanche and commuta- 50 VOLTS tion modes.
0.5. Size:77K st
stp60n05 stp60n06.pdf
STP60N05-14 STP60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(on) D STP60N05-14 50 V
0.6. Size:81K st
stp60n05-14.pdf
STP60N05-14 STP60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(on) D STP60N05-14 50 V
0.8. Size:54K st
stp60n05-14 stp60n06-14.pdf
STP60N05-14 STP60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(on) D STP60N05-14 50 V
0.9. Size:354K st
stp60n05-16 stp60n06-16.pdf
www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com
0.11. Size:102K renesas
np60n055vuk.pdf
Preliminary Data Sheet NP60N055VUK R07DS0588EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Dec 12, 2011 Description The NP60N055VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 5.5 m MAX. (VGS = 10 V, ID = 30 A) Low Ciss Ciss = 2500 pF TYP. (VDS = 25 V) Designed for au
0.12. Size:260K renesas
np60n055kug.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
0.13. Size:102K renesas
np160n055tuk.pdf
Preliminary Data Sheet NP160N055TUK R07DS0592EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Dec 12, 2011 Description The NP160N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.10 m MAX. (VGS = 10 V, ID = 80 A) Low Ciss Ciss = 7500 pF TYP. (VDS = 25 V) Designed for
0.14. Size:207K renesas
np160n055tuj.pdf
Preliminary Data Sheet NP160N055TUJ R07DS0022EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Jul 01, 2010 Description The NP160N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 3.0 m MAX. (VGS = 10 V, ID = 80 A) Low Ciss Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V) Desig
0.15. Size:103K renesas
np60n055muk np60n055nuk.pdf
Preliminary Data Sheet NP60N055MUK, NP60N055NUK R07DS0598EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Jan 11, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 6.0 m MAX. (VGS = 10 V, ID = 30 A) Low Ciss Ciss = 2500 pF TYP. (VDS = 25 V) D
0.18. Size:248K ixys
ixta260n055t2 ixtp260n055t2.pdf
TrenchT2TM IXTA260N055T2 VDSS = 55V IXTP260N055T2 ID25 = 260A Power MOSFET RDS(on) 3.3m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 175 C 55 V S (TAB) VDGR TJ = 25 C to 175 C, RGS = 1M 55 V VGSM Transient 20 V TO-220 (IXTP) ID25 TC = 25 C 260 A ILRM
0.19. Size:166K ixys
ixth260n055t2.pdf
Preliminary Technical Information VDSS = 55V TrenchT2TM Power IXTH260N055T2 ID25 = 260A MOSFET RDS(on) 3.3m N-Channel Enhancement Mode Avalanche Rated TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C55 V G VDGR TJ = 25 C to 175 C, RGS = 1M 55 V (TAB) D S VGSM Transient 20 V ID25 TC = 25 C 260 A G = Gate D =
0.20. Size:1094K cn anhi
aud060n055 aun042n055 aub050n055 aup060n055.pdf
AUD060N055,AUN042N055,AUB050N055,AUP060N055 MOSFET Silicon N-Channel MOS 1. Applications Single-ended flyback or two-transistor forward topologies. PC power, PD Adaptor, LCD & PDP TV and LED lighting. 2. Features Low drain-source on-resistance TO252 RDS(ON) = 4m (typ.) DFN5X6 RDS(ON) = 3.6m (typ.) TO263&TO220 RDS(ON) = 4.3m (typ.) Easy to control Gate switching Enhancement
0.21. Size:1263K cn hmsemi
hm60n05k.pdf
HM60N05K N-Channel Enhancement Mode Power MOSFET Description The HM60N05K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 50V,ID =60A RDS(ON)
0.22. Size:1063K cn hmsemi
hm60n05.pdf
HM60N05 N-Channel Enhancement Mode Power MOSFET Description The HM60N05 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 50V,ID =60A RDS(ON)
0.23. Size:230K inchange semiconductor
60n05-16.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor 60N05-16 DESCRIPTION Drain Current I = 60A@ T =25 D C Static Drain-Source On-Resistance R = 16m (Max) DS(on) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General purpose power amplifier High current,high speed switching Solenoid and
Otros transistores... 2SK1938-01
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