6N70A Datasheet. Equivalente

 ..1. Size:279K  inchange semiconductor
 6n70a.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 6N70A FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 700V(Min) DSS Avalanche Energy Specified Fast Switching Simple Drive Requirements Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switch mode power supply. ABSOLUTE MAXIMUM RATINGS(T =2

 0.1. Size:213K  1
 ssi6n70a ssw6n70a.pdf

 0.2. Size:213K  1
 ssf6n70a.pdf

 0.3. Size:864K  samsung
 ssp6n70a.pdf

Advanced Power MOSFET FEATURES BVDSS = 700 V Avalanche Rugged Technology RDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 700V Low RDS(ON) 1.552 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value

 0.4. Size:501K  samsung
 sss6n70a.pdf

Advanced Power MOSFET FEATURES BVDSS = 700 V Avalanche Rugged Technology RDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 700V Low RDS(ON) 1.552 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value

 0.5. Size:935K  samsung
 ssh6n70a.pdf

Advanced Power MOSFET FEATURES BVDSS = 700 V Avalanche Rugged Technology RDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 700V Low RDS(ON) 1.552 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value

 0.6. Size:1310K  belling
 bl6n70a-p bl6n70a-a bl6n70a-u bl6n70a-d.pdf

BL6N70A Power MOSFET 1 Description Step-Down Converter BL6N70A, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

 0.7. Size:360K  wuxi china
 cs6n70a3d-g.pdf

Silicon N-Channel Power MOSFET R CS6N70 A3D-G General Description VDSS 700 V CS6N70 A3D-G, the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25 ) 100 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.35 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 0.8. Size:357K  wuxi china
 cs6n70a4d-g.pdf

Silicon N-Channel Power MOSFET R CS6N70 A4D-G General Description VDSS 700 V CS6N70 A4D-G, the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25 ) 100 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.5 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po