Справочник MOSFET. 6N70A

 

6N70A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 6N70A
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 130 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 51 nC
   trⓘ - Время нарастания: 23 ns
   Cossⓘ - Выходная емкость: 100 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.8 Ohm
   Тип корпуса: TO-3PN TO-220

 Аналог (замена) для 6N70A

 

 

6N70A Datasheet (PDF)

 ..1. Size:279K  inchange semiconductor
 6n70a.pdf

6N70A 6N70A

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 6N70AFEATURESDrain Current I = 6A@ T =25D CDrain Source Voltage : V = 700V(Min)DSSAvalanche Energy SpecifiedFast SwitchingSimple Drive RequirementsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitch mode power supply.ABSOLUTE MAXIMUM RATINGS(T =2

 0.1. Size:213K  1
 ssi6n70a ssw6n70a.pdf

6N70A 6N70A

 0.2. Size:213K  1
 ssf6n70a.pdf

6N70A 6N70A

 0.3. Size:864K  samsung
 ssp6n70a.pdf

6N70A 6N70A

Advanced Power MOSFETFEATURESBVDSS = 700 V Avalanche Rugged TechnologyRDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 700V Low RDS(ON) : 1.552 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

 0.4. Size:501K  samsung
 sss6n70a.pdf

6N70A 6N70A

Advanced Power MOSFETFEATURESBVDSS = 700 V Avalanche Rugged TechnologyRDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 700V Low RDS(ON) : 1.552 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

 0.5. Size:935K  samsung
 ssh6n70a.pdf

6N70A 6N70A

Advanced Power MOSFETFEATURESBVDSS = 700 V Avalanche Rugged TechnologyRDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 700V Low RDS(ON) : 1.552 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

 0.6. Size:1310K  belling
 bl6n70a-p bl6n70a-a bl6n70a-u bl6n70a-d.pdf

6N70A 6N70A

BL6N70A Power MOSFET 1Description Step-Down Converter BL6N70A, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

 0.7. Size:360K  wuxi china
 cs6n70a3d-g.pdf

6N70A 6N70A

Silicon N-Channel Power MOSFET RCS6N70 A3D-G General Description VDSS 700 V CS6N70 A3D-G, the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25) 100 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.35 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 0.8. Size:357K  wuxi china
 cs6n70a4d-g.pdf

6N70A 6N70A

Silicon N-Channel Power MOSFET R CS6N70 A4D-G General Description VDSS 700 V CS6N70 A4D-G, the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25) 100 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.5 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

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