75N06 Todos los transistores

 ..1. Size:229K  inchange semiconductor
 75n06.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 75N06 DESCRIPTION High current capability Drain Source Voltage- V = 60V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Regulator High current,high speed switching Solenoid and relay drivers ABSOLUTE MAXIMUM RATINGS(T =25 ) C

 0.1. Size:398K  1
 sth75n06 sth75n06fi stw75n06.pdf

 0.2. Size:72K  1
 sup75n06-08 sub75n06-08.pdf

SUP/SUB75N06-08 N-Channel Enhancement-Mode Transistors Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.008 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-08 Top View N-Channel MOSFET SUP75N06-08 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter Symbol Limit Unit Gate-Source Voltage VGS "20 V TC = 25_C 75a Continuous

 0.3. Size:342K  motorola
 mtb75n06hdrev1.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB75N06HD/D Designer's Data Sheet MTB75N06HD HDTMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET 75 AMPERES N Channel Enhancement Mode Silicon Gate 60 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 10 mOHM than any existing surf

 0.4. Size:275K  motorola
 mtp75n06hd.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP75N06HD/D Designer's Data Sheet MTP75N06HD HDTMOS E-FET Motorola Preferred Device High Density Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high cell density HDTMOS E FET is designed to 75 AMPERES withstand high energy in the avalanche and commutation modes. RDS(on) = 10.0

 0.5. Size:293K  motorola
 mtb75n06hd.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB75N06HD/D Designer's Data Sheet MTB75N06HD HDTMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET 75 AMPERES N Channel Enhancement Mode Silicon Gate 60 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 10 mOHM than any existing surf

 0.6. Size:398K  st
 stw75n06.pdf

 0.7. Size:159K  vishay
 sum75n06-09l.pdf

SUM75N06-09L Vishay Siliconix N-Channel 60-V (D-S), 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.0093 at VGS = 10 V 90 RoHS* 60 0.0135 at VGS = 4.5 V 62 COMPLIANT D TO-263 G DRAIN connected to TAB G D S Top View S Ordering Information SUM75N06-09L-E3 (Lead (Pb)-free) N-

 0.8. Size:71K  vishay
 sup75n06-07l sub75n06-07l.pdf

SUP/SUB75N06-07L Vishay Siliconix N-Channel 60-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY 175 C Rated Maximum Junction Temperature V(BR)DSS (V) rDS(on) ( )ID (A) Available 0.0075 at VGS = 10 V RoHS* 60 75a 0.0085 at VGS = 4.5 V COMPLIANT TO-220AB D TO-263 DRAIN connected to TAB G G D S Top View G D S SUB75N06-07L Top View S SUP75N06-07L N-Channel MOSFET

 0.9. Size:88K  vishay
 sub75n06-07l sup75n06-07l.pdf

SUP/SUB75N06-07L Vishay Siliconix N-Channel 60-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY 175 C Rated Maximum Junction Temperature V(BR)DSS (V) rDS(on) ( )ID (A) Available 0.0075 at VGS = 10 V RoHS* 60 75a 0.0085 at VGS = 4.5 V COMPLIANT TO-220AB D TO-263 DRAIN connected to TAB G G D S Top View G D S SUB75N06-07L Top View S SUP75N06-07L N-Channel MOSFET

 0.10. Size:102K  vishay
 sup75n06-12l sub75n06-12l.pdf

SUP/SUB75N06-12L Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 75 60 60 0.014 @ VGS = 4.5 V 70 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-12L Top View N-Channel MOSFET SUP75N06-12L ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit

 0.11. Size:73K  vishay
 sup75n06-08 sub75n06-08.pdf

SUP/SUB75N06-08 Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.008 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-08 Top View N-Channel MOSFET SUP75N06-08 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Gate-Source Voltage VGS "20 V TC = 25_C 75

 0.12. Size:41K  omnirel
 oms75n06ml.pdf

OMS75N06ML OMS38L60ML Preliminary Data Sheet OMS60N10ML OMS32F60ML 3-PHASE BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE 60 To 600 Volt, 25 To 75 Amp Modules, 3-Phase Bridge Configuration FEATURES Isolated Heat Sink Low Inductance Design Fast Switching Speed Low On Voltage Zener Gate Protection DESCRIPTION These modules are ideally suited for hig

 0.13. Size:79K  onsemi
 ntb75n06g ntp75n06 ntp75n06 ntb75n06.pdf

NTP75N06, NTB75N06 Power MOSFET 75 Amps, 60 Volts, N-Channel TO-220 and D2PAK Designed for low voltage, high speed switching applications in http //onsemi.com power supplies, converters and power motor controls and bridge circuits. 75 AMPERES, 60 VOLTS Features RDS(on) = 9.5 mW Pb-Free Packages are Available N-Channel D Typical Applications Power Supplies Converters

 0.14. Size:79K  onsemi
 ntb75n06l ntp75n06l ntp75n06l ntb75n06l.pdf

NTP75N06L, NTB75N06L Power MOSFET 75 Amps, 60 Volts, Logic Level N-Channel TO-220 and D2PAK http //onsemi.com Designed for low voltage, high speed switching applications in 75 AMPERES, 60 VOLTS power supplies, converters and power motor controls and bridge circuits. RDS(on) = 11 mW Features N-Channel Pb-Free Packages are Available D Typical Applications Power Supplies G

 0.15. Size:324K  cet
 cep75n06 ceb75n06.pdf

CEP75N06/CEB75N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 87A, RDS(ON) = 12m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Pa

 0.16. Size:418K  cet
 cep75n06g ceb75n06g.pdf

CEP75N06G/CEB75N06G N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 75A, RDS(ON) = 13m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise no

 0.17. Size:174K  ssdi
 sff75n06-28.pdf

PRELIMINARY SFF75N06-28 SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone (562) 404-4474 * Fax (562) 404-1773 30 AMP 1/ 60 VOLTS DESIGNER'S DATA SHEET 25m N-CHANNEL POWER MOSFET FEATURES Rugged construction with poly silicon gate Low RDS (on) and high transconductance 28 PIN CLCC Excellent high temperature stability Very fast switc

 0.18. Size:31K  ssdi
 sff75n06m sff75n06z.pdf

SFF75N06M SFF75N06Z SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone (562) 404-7855 * Fax (562) 404-1773 75 AMP 60 VOLTS DESIGNER'S DATA SHEET 15m FEATURES N-CHANNEL Advanced high-cell density withstands high energy POWER MOSFET Very low conduction and switching losses Fast recovery drain-to-source diode with soft r

 0.19. Size:1336K  jilin sino
 jt075n065wed.pdf

N N-CHANNEL IGBT R JT075N065WED MAIN CHARACTERISTICS Package IC 75A VCES 650V Vcesat-typ 1.75V @Vge=15V APPLICATIONS General purpose inverters UPS UPS FEATURES Low gate charge Trench FS , Trench FS Technology,

 0.20. Size:1675K  jilin sino
 att075n065eq.pdf

N N-CHANNEL IGBT R ATT075N065EQ MAIN CHARACTERISTICS Package IC 75A VCE 650V Vcesat-typ 1.7V APPLICATIONS Industrial Inverter On Board Chargers DC-DC Converters DC-DC Motordrives FEATURES Low gate

 0.21. Size:1317K  jilin sino
 tt075n065eq.pdf

N N-CHANNEL IGBT R TT075N065EQ MAIN CHARACTERISTICS Package TO-247 IC 75A VCES 650V Vcesat-typ 1.6V TO-247 APPLICATIONS Industrial Inverter UPS UPS DC-DC Converters DC-DC Motordrives Solarconverters TO-247-4L

 0.22. Size:664K  jilin sino
 jt075n065ghed.pdf

 0.23. Size:1794K  first silicon
 fir75n06g.pdf

FIR75N06G N-Channel Enhancement Mode Power Mosfet PIN Connection TO-220 Description The FIR75N06G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =75A RDS(ON)

 0.24. Size:1068K  sanrise-tech
 sre75n065fsu2dh.pdf

Preliminary Datasheet 75A 650V Trench Fieldstop IGBT with anti-parallel diode SRE75N065FSU2DH General Description Symbol The SRE75N065FSU2DH is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra- low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE7565FSU2DH package is TO-247. Features F

 0.25. Size:852K  sanrise-tech
 sre75n065fsud6.pdf

Datasheet 75A 650V Trench Fieldstop IGBT with anti-parallel diode SRE75N065FSUD6 General Description Symbol The SRE75N065FSUD6 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra- low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE75N065FSUD6 package is TO-247. Figure 1 Symbol of SRE75N

 0.26. Size:1226K  sirectifier
 sii75n06.pdf

SII75N06 NPT IGBT Modules Dimensions in mm (1mm = 0.0394") TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol Conditions Values Units IGBT Wechselrichter/ IGBT Inverter VCES 600 V IC 100(75) TC= 25(75)oC A ICRM 150 TC= 75oC, tP =1ms A Ptot TC= 25oC, Tvj= 150oC 355 W _ VGES +20 V Diode Wechselrichter/ Diode Inverter IF 75 A IFRM 150 tP =1ms A 2 VR=0V

 0.27. Size:1074K  slkor
 sl75n06q.pdf

SL75N06Q N-Channel Power MOSFET General Description Product Summary Very low on-resistance RDS(ON) VDS 60V Low Gate Charge ID 75A Excellent Gate Charge x RDS(ON) Product RDS(ON) (at VGS =10V)

 0.28. Size:583K  jiejie micro
 jmtp075n06a.pdf

JMTP075N06A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 60V,17A Load Switch R

 0.29. Size:569K  cn hmsemi
 hm75n06.pdf

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =75A RDS(ON)

 0.30. Size:519K  cn hmsemi
 hm75n06k.pdf

HM75N06K N-Channel Enhancement Mode Power MOSFET Description The HM75N06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =75A RDS(ON)