75N06 - описание и поиск аналогов

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 75N06 DESCRIPTION High current capability Drain Source Voltage- V = 60V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Regulator High current,high speed switching Solenoid and relay drivers ABSOLUTE MAXIMUM RATINGS(T =25 ) C

SUP/SUB75N06-08 N-Channel Enhancement-Mode Transistors Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.008 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-08 Top View N-Channel MOSFET SUP75N06-08 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter Symbol Limit Unit Gate-Source Voltage VGS "20 V TC = 25_C 75a Continuous

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB75N06HD/D Designer's Data Sheet MTB75N06HD HDTMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET 75 AMPERES N Channel Enhancement Mode Silicon Gate 60 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 10 mOHM than any existing surf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP75N06HD/D Designer's Data Sheet MTP75N06HD HDTMOS E-FET Motorola Preferred Device High Density Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high cell density HDTMOS E FET is designed to 75 AMPERES withstand high energy in the avalanche and commutation modes. RDS(on) = 10.0

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB75N06HD/D Designer's Data Sheet MTB75N06HD HDTMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET 75 AMPERES N Channel Enhancement Mode Silicon Gate 60 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 10 mOHM than any existing surf

SUM75N06-09L Vishay Siliconix N-Channel 60-V (D-S), 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.0093 at VGS = 10 V 90 RoHS* 60 0.0135 at VGS = 4.5 V 62 COMPLIANT D TO-263 G DRAIN connected to TAB G D S Top View S Ordering Information SUM75N06-09L-E3 (Lead (Pb)-free) N-

SUP/SUB75N06-07L Vishay Siliconix N-Channel 60-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY 175 C Rated Maximum Junction Temperature V(BR)DSS (V) rDS(on) ( )ID (A) Available 0.0075 at VGS = 10 V RoHS* 60 75a 0.0085 at VGS = 4.5 V COMPLIANT TO-220AB D TO-263 DRAIN connected to TAB G G D S Top View G D S SUB75N06-07L Top View S SUP75N06-07L N-Channel MOSFET

SUP/SUB75N06-07L Vishay Siliconix N-Channel 60-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY 175 C Rated Maximum Junction Temperature V(BR)DSS (V) rDS(on) ( )ID (A) Available 0.0075 at VGS = 10 V RoHS* 60 75a 0.0085 at VGS = 4.5 V COMPLIANT TO-220AB D TO-263 DRAIN connected to TAB G G D S Top View G D S SUB75N06-07L Top View S SUP75N06-07L N-Channel MOSFET

SUP/SUB75N06-12L Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 75 60 60 0.014 @ VGS = 4.5 V 70 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-12L Top View N-Channel MOSFET SUP75N06-12L ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit

SUP/SUB75N06-08 Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.008 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-08 Top View N-Channel MOSFET SUP75N06-08 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Gate-Source Voltage VGS "20 V TC = 25_C 75

OMS75N06ML OMS38L60ML Preliminary Data Sheet OMS60N10ML OMS32F60ML 3-PHASE BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE 60 To 600 Volt, 25 To 75 Amp Modules, 3-Phase Bridge Configuration FEATURES Isolated Heat Sink Low Inductance Design Fast Switching Speed Low On Voltage Zener Gate Protection DESCRIPTION These modules are ideally suited for hig

NTP75N06, NTB75N06 Power MOSFET 75 Amps, 60 Volts, N-Channel TO-220 and D2PAK Designed for low voltage, high speed switching applications in http //onsemi.com power supplies, converters and power motor controls and bridge circuits. 75 AMPERES, 60 VOLTS Features RDS(on) = 9.5 mW Pb-Free Packages are Available N-Channel D Typical Applications Power Supplies Converters

NTP75N06L, NTB75N06L Power MOSFET 75 Amps, 60 Volts, Logic Level N-Channel TO-220 and D2PAK http //onsemi.com Designed for low voltage, high speed switching applications in 75 AMPERES, 60 VOLTS power supplies, converters and power motor controls and bridge circuits. RDS(on) = 11 mW Features N-Channel Pb-Free Packages are Available D Typical Applications Power Supplies G

CEP75N06/CEB75N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 87A, RDS(ON) = 12m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Pa

CEP75N06G/CEB75N06G N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 75A, RDS(ON) = 13m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise no

PRELIMINARY SFF75N06-28 SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone (562) 404-4474 * Fax (562) 404-1773 30 AMP 1/ 60 VOLTS DESIGNER'S DATA SHEET 25m N-CHANNEL POWER MOSFET FEATURES Rugged construction with poly silicon gate Low RDS (on) and high transconductance 28 PIN CLCC Excellent high temperature stability Very fast switc

SFF75N06M SFF75N06Z SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone (562) 404-7855 * Fax (562) 404-1773 75 AMP 60 VOLTS DESIGNER'S DATA SHEET 15m FEATURES N-CHANNEL Advanced high-cell density withstands high energy POWER MOSFET Very low conduction and switching losses Fast recovery drain-to-source diode with soft r

N N-CHANNEL IGBT R JT075N065WED MAIN CHARACTERISTICS Package IC 75A VCES 650V Vcesat-typ 1.75V @Vge=15V APPLICATIONS General purpose inverters UPS UPS FEATURES Low gate charge Trench FS , Trench FS Technology,

N N-CHANNEL IGBT R ATT075N065EQ MAIN CHARACTERISTICS Package IC 75A VCE 650V Vcesat-typ 1.7V APPLICATIONS Industrial Inverter On Board Chargers DC-DC Converters DC-DC Motordrives FEATURES Low gate

N N-CHANNEL IGBT R TT075N065EQ MAIN CHARACTERISTICS Package TO-247 IC 75A VCES 650V Vcesat-typ 1.6V TO-247 APPLICATIONS Industrial Inverter UPS UPS DC-DC Converters DC-DC Motordrives Solarconverters TO-247-4L

FIR75N06G N-Channel Enhancement Mode Power Mosfet PIN Connection TO-220 Description The FIR75N06G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =75A RDS(ON)

Preliminary Datasheet 75A 650V Trench Fieldstop IGBT with anti-parallel diode SRE75N065FSU2DH General Description Symbol The SRE75N065FSU2DH is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra- low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE7565FSU2DH package is TO-247. Features F

Datasheet 75A 650V Trench Fieldstop IGBT with anti-parallel diode SRE75N065FSUD6 General Description Symbol The SRE75N065FSUD6 is a Field Stop Trench IGBT with anti-parallel diode, which offers ultra- low switching losses, high energy efficiency for switching applications such as PFC, Power Supply, Inverter, etc. The SRE75N065FSUD6 package is TO-247. Figure 1 Symbol of SRE75N

SII75N06 NPT IGBT Modules Dimensions in mm (1mm = 0.0394") TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol Conditions Values Units IGBT Wechselrichter/ IGBT Inverter VCES 600 V IC 100(75) TC= 25(75)oC A ICRM 150 TC= 75oC, tP =1ms A Ptot TC= 25oC, Tvj= 150oC 355 W _ VGES +20 V Diode Wechselrichter/ Diode Inverter IF 75 A IFRM 150 tP =1ms A 2 VR=0V

SL75N06Q N-Channel Power MOSFET General Description Product Summary Very low on-resistance RDS(ON) VDS 60V Low Gate Charge ID 75A Excellent Gate Charge x RDS(ON) Product RDS(ON) (at VGS =10V)

JMTP075N06A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 60V,17A Load Switch R

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =75A RDS(ON)

HM75N06K N-Channel Enhancement Mode Power MOSFET Description The HM75N06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =75A RDS(ON)