BUK444-600B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK444-600B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 25 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 1.5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Resistencia entre drenaje y fuente RDS(on): 4.5 Ohm
Paquete / Cubierta: TO-220F
Búsqueda de reemplazo de MOSFET BUK444-600B
BUK444-600B Datasheet (PDF)
buk444-600ab.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor BUK444-600A/BDESCRIPTIONDrain Source Voltage-: V =600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, And in general purpose switchingresistance applicationABSOLUTE
buk444-60h 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK444-60H GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic full-pack envelope. VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 21 AAutomotive applications, Switched Ptot Total power dissipation
buk444-200a-b.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK444-200A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic full-pack envelope. BUK444 -200A -200BThe device is intended for use in VDS Drain-source voltage 200 200 VSwitched Mode Power Supplies ID Drain current (DC) 5.3 4.7
buk444-800a-b 1.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK444-800A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic full-pack envelope. BUK444 -800A -800BThe device is intended for use in VDS Drain-source voltage 800 800 VSwitched Mode Power Supplies ID Drain current (DC) 1.4 1.2
buk444-200a-b 1.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK444-200A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic full-pack envelope. BUK444 -200A -200BThe device is intended for use in VDS Drain-source voltage 200 200 VSwitched Mode Power Supplies ID Drain current (DC) 5.3 4.7
buk444-200.pdf
isc N-Channel MOSFET Transistor BUK444-200A/BDESCRIPTIONDrain Source Voltage-: V =200V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, And in general purpose switchingresistance applicationABSOLUTE MAXIMUM RATINGS(T =25
buk444-800.pdf
isc N-Channel MOSFET Transistor BUK444-800A/BDESCRIPTIONDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, And in general purpose switchingresistance applicationABSOLUTE MAXIMUM RATINGS(T =25
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
