BUK444-600B MOSFET Datasheet: N-Ch, 600V, 1.5A. Full specification with pinout and replacement list

BUK444-600B Specs and Replacement

Type Designator: BUK444-600B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm

Package: TO-220F

BUK444-600B substitution

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BUK444-600B datasheet

4.1. Size:230K inchange semiconductor
buk444-600ab.pdf pdf_icon

INCHANGE Semiconductor isc N-Channel MOSFET Transistor BUK444-600A/B DESCRIPTION Drain Source Voltage- V =600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance application ABSOLUTE... See More ⇒

5.1. Size:66K philips
buk444-60h 1.pdf pdf_icon

Philips Semiconductors Product specification PowerMOS transistor BUK444-60H GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic full-pack envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 21 A Automotive applications, Switched Ptot Total power dissipation ... See More ⇒

7.1. Size:59K philips
buk444-200a-b.pdf pdf_icon

Philips Semiconductors Product Specification PowerMOS transistor BUK444-200A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. BUK444 -200A -200B The device is intended for use in VDS Drain-source voltage 200 200 V Switched Mode Power Supplies ID Drain current (DC) 5.3 4.7... See More ⇒

7.2. Size:52K philips
buk444-800a-b 1.pdf pdf_icon

Philips Semiconductors Product Specification PowerMOS transistor BUK444-800A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. BUK444 -800A -800B The device is intended for use in VDS Drain-source voltage 800 800 V Switched Mode Power Supplies ID Drain current (DC) 1.4 1.2... See More ⇒